Mr. Keiichi Tanaka Profile

Keiichi Tanaka

Process Engineer at Tokyo Electron Kyushu Ltd

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Author

Publications (8)

Proceedings Article | 20 March 2012 Paper

Resist process optimization for further defect reduction

Keiichi Tanaka, Tomohiro Iseki, Hiroshi Marumoto, Koji Takayanagi, Yuichi Yoshida, Ryouichi Uemura, Kosuke Yoshihara

Proceedings Volume 8325, 83252L (2012) https://doi.org/10.1117/12.915813

KEYWORDS: Semiconducting wafers, Particles, Photoresist processing, Bridges, Wafer manufacturing, Polymers, Capillaries, Yield improvement, NOx, Optical lithography

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Proceedings Article | 23 March 2010 Paper

Challenges of EUVL resist process toward practical application

Shinichi Ito, Yukiko Kikuchi, Daisuke Kawamura, Eishi Shiobara, Keiichi Tanaka, Hitoshi Kosugi, Junichi Kitano, Takayuki Toshima

Proceedings Volume 7636, 76362V (2010) https://doi.org/10.1117/12.846260

KEYWORDS: Extreme ultraviolet lithography, Photoresist processing, Critical dimension metrology, Semiconducting wafers, Extreme ultraviolet, Surface plasmons, Photomasks, Lithography, Nanoimprint lithography, Line edge roughness

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Proceedings Article | 1 April 2009 Paper

Evaluation of track performance for EUV lithography

Keiichi Tanaka, Junji Nakamura, Yoshiaki Yamada, Shinji Kobayashi, Toshiro Itani

Proceedings Volume 7273, 727320 (2009) https://doi.org/10.1117/12.813989

KEYWORDS: Polymers, Semiconducting wafers, Coating, Silicon, Extreme ultraviolet, Extreme ultraviolet lithography, Liquids, Photoresist processing, Time metrology, Solids

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Proceedings Article | 14 May 2004 Paper

Effect of the rinse solution to avoid 193-nm resist line collapse: a study for modification of resist polymer and process conditions

Seiya Masuda, Masakazu Kobayashi, Woo-Kyu Kim, Clement Anyadiegwu, Munirathna Padmanaban, Ralph Dammel, Keiichi Tanaka, Yoshiaki Yamada

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.537409

KEYWORDS: Polymers, Finite element methods, Capillaries, Photoresist processing, Critical dimension metrology, Manufacturing, Semiconducting wafers, Lead, Temperature metrology, Optical resolution

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Proceedings Article | 14 May 2004 Paper

Improvement of pattern collapse issue by additive-added D.I water rinse process: II

Osamu Miyahara, Keiichi Tanaka, Shinya Wakamizu, Junichi Kitano, Yoshiaki Yamada

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.534983

KEYWORDS: Etching, Photoresist processing, Standards development, Lithography, Semiconducting wafers, Critical dimension metrology, Scanning electron microscopy, Capillaries, Ions, Silicon

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Proceedings Article | 16 June 2003 Paper

Improvement of resist pattern collapse

Manabu Watanabe, Yoichi Tomo, Masaki Yamabe, Yukio Kiba, Keiichi Tanaka, Ryoichiro Naito

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.484978

KEYWORDS: Semiconducting wafers, Photoresist processing, Lithography, Ultraviolet radiation, Liquids, Extreme ultraviolet lithography, Capillaries, Scanning electron microscopy, Lithium, Fabrication

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Proceedings Article | 12 June 2003 Paper

Improvement of pattern collapse issue by additive-added D.I. water rinse process

Keiichi Tanaka, Ryoichiro Naito, Tomohiro Kitada, Yukio Kiba, Yoshiaki Yamada, Masakazu Kobayashi, Hiroyuki Ichikawa

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485069

KEYWORDS: Photoresist processing, Interfaces, Semiconducting wafers, Capillaries, Ions, Water, Photoresist materials, Lithography, Etching, Polymers

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Reduction of critical dimension in lithography technology is aggressively promoted. At the same time, further resist thickness reduction is being pursued to increase the resolution capabilities of resist. However, thin film has its limitation because of etch requirements etc. As that result, the promotion of reduction results in increasing the aspect ratio, which leads to pattern collapse. It is well known that at drying step in developing process the capillary effect operates the photoresist pattern. If the force of the capillary effect is greater than the aggregation force of the resist pattern, the pattern collapse is generated. And the key parameters of the capillary effect are the space width between patterns, the aspect ratio, the contact angle of the D.I water rinse and the surface tension of rinse solution. Among these parameters the surface tension of rinse solution can be controlled by us. On the other hand, we've already reported that the penetration of TMAH and D.I water into the resist plays an important role on the lithographic latitude. For example, when we use the resist which TMA ion can be easily diffuse into, D.I water and TMA ion which are penetrated in the resist decreases the aggregation force of resist pattern and causes the pattern collapse even by the weak force against resist pattern. These results indicate that the swelling of photoresist by TMA ion and water is very important factor for controlling the pattern collapse. Currently, two methods are mainly tried to reduce the surface tension of rinse solution: SCF (Super Critical Fluid) and addition of additive to D.I water rinse. We used the latter method this time, because this technique has retrofittability and not special tool. And in this evaluation, we found that the degree of suppressing pattern collapse depends on the additive chemistry or formulation. With consideration given to process factors such as above, we investigated what factors contribute to suppressing pattern collapse for each resist platform when using additive-added rinse solutions. This report describes the results of our examinations and discussions of the pattern collapse mechanism.

Proceedings Article | 24 July 2002 Paper

Application of diluted developer solution (DDS) process to 193-nm photolithography process

Keiichi Tanaka, Hiroyuki Iwaki, Yoshiaki Yamada, Yukio Kiba, Shigenori Kamei, Kazuyuki Goto

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474256

KEYWORDS: Polymers, Ions, Line edge roughness, Photoresist processing, Monochromatic aberrations, Polymer thin films, Optical lithography, Diffusion, Rutherfordium, Molecules

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Showing 5 of 8 publications

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