Mr. Keiichiro Hitomi Profile

Keiichiro Hitomi

at Hitachi America Ltd

SPIE Involvement:

Author

Publications (10)

Proceedings Article | 22 February 2021 Presentation + Paper

Evaluation of deep learning model for 3D profiling of HAR features using high-voltage CD-SEM

Wei Sun, Yasunori Goto, Takuma Yamamoto, Keiichiro Hitomi

Proceedings Volume 11611, 116110X (2021) https://doi.org/10.1117/12.2592052

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SPIE Journal Paper | 12 October 2016

Methodology for determining critical dimension scanning electron microscope measurement condition of sub-20 nm resist patterns for 0.33 NA extreme ultraviolet lithography

Nobuhiro Okai, Erin Lavigne, Keiichiro Hitomi, Scott Halle, Shoji Hotta, Shunsuke Koshihara, Atsuko Yamaguchi, Junichi Tanaka, Todd Bailey

JM3, Vol. 15, Issue 04, 044001, (October 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.4.044001

KEYWORDS: Extreme ultraviolet, Scanning electron microscopy, Critical dimension metrology, Electron microscopes, Extreme ultraviolet lithography, Electron beams, Image processing, Double patterning technology, Solids, Precision measurement

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SPIE Journal Paper | 19 July 2016

Improvement of optical proximity-effect correction model accuracy by hybrid optical proximity-effect correction modeling and shrink correction technique for 10-nm node process

Keiichiro Hitomi, Scott Halle, Marshal Miller, Ioana Graur, Nicole Saulnier, Derren Dunn, Nobuhiro Okai, Shoji Hotta, Atuko Yamaguchi, Hitoshi Komuro, Toru Ishimoto, Shunsuke Koshihara, Yutaka Hojo

JM3, Vol. 15, Issue 03, 034002, (July 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.3.034002

KEYWORDS: Optical proximity correction, Data modeling, Critical dimension metrology, Optical calibration, Scanning electron microscopy, Hybrid optics, Metals, Calibration, Instrument modeling, OLE for process control

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Proceedings Article | 31 March 2015 Paper

Application of SEM-based contours for OPC model weighting and sample plan reduction

Marshal Miller, Keiichiro Hitomi, Scott Halle, Ioana Graur, Todd Bailey

Proceedings Volume 9426, 94260Y (2015) https://doi.org/10.1117/12.2176406

KEYWORDS: Calibration, Data modeling, Cadmium sulfide, Optical proximity correction, Scanning electron microscopy, Statistical modeling, Finite element methods, Semiconducting wafers, Front end of line, Optical lithography

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Proceedings Article | 19 March 2015 Paper

Methodology for determining CD-SEM measurement condition of sub-20nm resist patterns for 0.33NA EUV lithography

Nobuhiro Okai, Erin Lavigne, Keiichiro Hitomi, Scott Halle, Shoji Hotta, Shunsuke Koshihara, Junichi Tanaka, Todd Bailey

Proceedings Volume 9424, 94240H (2015) https://doi.org/10.1117/12.2175841

KEYWORDS: Extreme ultraviolet, Electron beams, Extreme ultraviolet lithography, Scanning electron microscopy, Precision measurement, Metrology, Image processing, Optical testing, Error analysis, Electron microscopes

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Proceedings Article | 2 April 2014 Paper

Precise CD-SEM metrology of resist patterns at around 20 nm for 0.33NA EUV lithography

Nobuhiro Okai, Erin Lavigne, Keiichiro Hitomi, Scott Halle, Shoji Hotta, Shunsuke Koshihara, Karen Petrillo, Atsuko Yamaguchi, Junichi Tanaka, Todd Bailey

Proceedings Volume 9050, 90501X (2014) https://doi.org/10.1117/12.2045375

KEYWORDS: Semiconducting wafers, Extreme ultraviolet, Electron beams, Extreme ultraviolet lithography, Photoresist processing, Critical dimension metrology, Metrology, Precision measurement, Photomasks, Image processing

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Proceedings Article | 31 March 2014 Paper

Hybrid OPC modeling with SEM contour technique for 10nm node process

Keiichiro Hitomi, Scott Halle, Marshal Miller, Ioana Graur, Nicole Saulnier, Derren Dunn, Nobuhiro Okai, Shoji Hotta, Atsuko Yamaguchi, Hitoshi Komuro, Toru Ishimoto, Shunsuke Koshihara, Yutaka Hojo

Proceedings Volume 9052, 90520W (2014) https://doi.org/10.1117/12.2047678

KEYWORDS: Optical proximity correction, Data modeling, Scanning electron microscopy, Critical dimension metrology, Metals, Instrument modeling, Calibration, Metrology, Logic devices, OLE for process control

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SPIE Journal Paper | 11 December 2012

Dose-focus monitor technique using a critical-dimension scanning electron microscope and its application to local variation analysis

Shoji Hotta, Timothy Brunner, Scott Halle, Keiichiro Hitomi, Takeshi Kato, Atsuko Yamaguchi

JM3, Vol. 11, Issue 4, 043011, (December 2012) https://doi.org/10.1117/12.10.1117/1.JMM.11.4.043011

KEYWORDS: Scanning electron microscopy, Semiconducting wafers, Photoresist processing, Scatterometry, Electron microscopes, Metrology, Photomasks, Critical dimension metrology, Detection and tracking algorithms, Algorithm development

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Proceedings Article | 5 April 2012 Paper

Methodology for establishing CD-SEM robust metrology algorithm for development cycles applications

Keiichiro Hitomi, Erin Lavigne, Shoji Hotta, Yoshinori Momonoi, Matthew Colburn, Atsuko Yamaguchi, Katsuhiro Sasada, Tatsuya Maeda

Proceedings Volume 8324, 83241G (2012) https://doi.org/10.1117/12.916492

KEYWORDS: Metrology, Critical dimension metrology, Photoresist materials, Etching, Image processing, Algorithm development, Lithography, Double patterning technology, Cadmium, Semiconductors

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Proceedings Article | 10 March 2012 Paper

Dose-focus monitor technique using CD-SEM and application to local variation analysis

Shoji Hotta, Timothy Brunner, Scott Halle, Keiichiro Hitomi, Takeshi Kato, Atsuko Yamaguchi

Proceedings Volume 8324, 832405 (2012) https://doi.org/10.1117/12.916413

KEYWORDS: Semiconducting wafers, Scatterometry, Metrology, Critical dimension metrology, Photomasks, Detection and tracking algorithms, Photoresist processing, Algorithm development, Process control, Lithography

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Showing 5 of 10 publications

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