Diode lasers in the 1400 nm to 1600 nm regime are used in a variety of applications including pumping Er:YAG lasers,
range finding, materials processing, aesthetic medical treatments and surgery. In addition to the compact size, efficiency,
and low cost advantages of traditional diode lasers, high power semiconductor lasers in the eye-safe regime are
becoming widely used in an effort to minimize the unintended impact of potentially hazardous scattered optical radiation
from the laser source, the optical delivery system, or the target itself.
In this article we describe the performance of high efficiency high brightness InP laser bars at 1470nm and 1550nm
developed at QPC Lasers for applications ranging from surgery to rangefinding.
High power semiconductor lasers with wavelengths in the eye-safer region have application to a variety of defense,
medical and industrial applications. We report on the reliability of high power multimode and single mode InGaAsP/InP
diode lasers with wavelengths in the range 1320 to 1550 nm in a variety of configurations, including single-chip,
conduction-cooled arrays, arrays incorporating internal diffraction gratings, master-oscillator power amplifiers, and
fiber-coupled modules of the above. In all cases we show very low rates of degradation in optical power and the absence
of sudden failure from catastrophic optical damage or from laser-package interactions.