Mr. Kenji Shirakawa Profile

Kenji Shirakawa

at Keio Univ

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Proceedings Article | 27 August 2009 Paper

Lasing characteristics of optically pumped edge-emitting organic semiconductor laser with 4,4'-bis[(N-carbazolyl)styryl] biphenyl

Kenji Shirakawa, Hiroki Yamaoka, Yasuhiro Toriyama, N. Shinichi Takahashi, Chihaya Adachi

Proceedings Volume 7415, 74151H (2009) https://doi.org/10.1117/12.825451

KEYWORDS: Optical pumping, Semiconductor lasers, Resonators, Organic semiconductors, Laser optics, Polishing, Silica, Liquids, Nitrogen, Picosecond phenomena

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Recently, we have presented optically-pumped edge-emitting organic laser devices consisting of Alq3:DCM film (5% DCM) deposited onto a polished GaAs (100) substrate coated with an 1-um-thick layer of RF sputtered SiO₂ using cleaving method. The threshold density was typically 3 μJ/cm² in a sample with a cavity length of 5 mm. The internal loss α and the gain coefficient β were found to be about 10.5 cm^-1 and 3.2 cm-μJ^-1, respectively. BSB-Cz has quite-high efficiency as blue laser material. In this work, organic laser devices of CBP:BSB-Cz film (6% BSB-Cz) were vacuum-deposited onto a polished GaAs (100) substrate coated with an 1 um-thick layer of RF sputtered SiO₂. The cleaved samples were optically pumped by a N₂ gas laser (wavelength: 337 nm) with a pulse width of 600 ps at a repetition rate of 20 Hz. We investigated emission spectrum, emission intensity and the full width at half maximum (FWHM) by varying excitation intensity. Pumping a sample with a cavity-length of 5 mm, emission intensity drastically increased at certain. The FWHM drastically narrowed as the emission intensity was increased. The threshold density was 1.40 μJ/cm² with a cavity length of 5 mm, it was half as much as Alq3:DCM. The internal loss α and the gain coefficient β were found to be about 5.57 cm^-1 and 6.72 cm-μJ^-1. We found BSB-Cz material have higher efficiency than Alq3:DCM. Moreover, polarization characteristics. And the threshold density cavity length relationship were investigated.

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