A new heterostructure based on AlxIn1-xN/GaN high electron mobility transistor (HEMT) on SiC substrate has been
proposed for high frequency, where it offers the best performance in comparison to other two heterostructures like on
AlxGa1-xN/GaN and InxGa1-xN/GaN. We have investigated the effect of different higher output characteristics in
comparison to conventional AlxGa1-xN/GaN and InxGa1-xN/GaN with the AlxIn1-xN/GaN heterostructure, where the drain
current is maximum for AlxIn1-xN/GaN and AlxGa1-xN/GaN heterostructure HEMT respectively for the same barrier
thickness and for the same gate source voltage.