The wavefront aberration that is generally represented with Zernike polynomials is an approximate representation. The reasons are that, in actual optics, the wavefront has such frequency component that cannot be represented with Zernike polynomials. Moreover, it can never be scalar or monochromatic. Instead, it must be vector and polychromatic. Higher frequency component beyond Zernike representation could cause a local flare that will be observed in the surrounding area of nominally bright patterns. Vector aspect of light leads to imaging degradation combined with birefringence of the material. Even with a narrowed spectral bandwidth of excimer lasers, chromatic aberration could be a factor that impacts imaging performance. Lateral, rather than axial, chromatic aberration can be critical because it is influential to CD uniformity across the field. This paper describes the factors that deteriorate imaging performance based on Nikon’s optics, and finally concludes hat our optics is well balanced among these factors.
The impact of lens aberration on linewidth control and pattern shift is investigated with aerial image simulation using Zernike sensitivity method through focus to secure sufficient depth-of-focus (DOF). We found 0 and even theta component has large amount of impact on linewidth control in defocused condition due to best focus shift. This phenomenon makes degradation of DOF performance. For actual phase shift mask (PSM) application, DOF performance is very important, so as to reduce the focus shift by lens aberration, and the lens is controlled with pre-correction of best focus deviation in the field. This method is effective to obtain large DOF with PSM.
Scanning projection system plays a leading part in current DUV optical lithography. It is frequently pointed out that the mechanically induced distortion and field curvature degrade image quality after scanning. On the other hand, the aberration of the projection lens is averaged along the scanning direction. This averaging effect reduces the residual aberration significantly. The aberration averaging based on the point spread function and phase retrieval technique in order to estimate the effective wavefront aberration after scanning is described in this paper. Our averaging method is tested using specified wavefront aberration, and its accuracy is discussed based on the measured wavefront aberration of recent Nikon projection lens.
Firstly, various technical aspects of ArF optics are surveyed. At present, the ArF excimer laser is regarded as one of the most promising candidates as a next-generation light source for optical lithography. Discussions are ranging over some critical issues of ArF optics. The lifetime of ArF optics supposedly limited by the radiation compaction of silica glass is estimated in comparison with KrF optics. Availability of calcium fluoride (CaF2) is also discussed. As a designing issue, a comparative study is made about the optical configuration, dioptric or catadioptric. In the end, our resist-based performance is shown. Secondly, estimated are the future trend regarding minimum geometry and the optical parameters, such as numerical aperture and wavelength. For the estimation, simulations based on aerial images are performed, where in the resolution limit is defined as a minimum feature size which retains practical depth of focus. Pattern geometry is classified into two categories, which are dense lines and isolated lines. Available wavelengths are assumed to be KrF excimer laser ((λ =248 nm), ArF excimer laser (λ =193 nm) and F2 excimer laser (λ =157 nm). Based upon the simulation results, the resolution limit is estimated for each geometry and each wavelength.
Two types of new optical system for 150 nm lithography are studied. One is the system with KrF source and high numerical aperture (NA), the other is the system with ArF source. By aerial image simulation, the adequate NA of each projection lens is searched, and the value was 0.68 for KrF source and 0.60 for ArF source. Then the projection lens is fabricated and evaluated. The results are almost same as those of simulation.
Two types of innovative imaging systems are studied. One is the system with non-incoherent effective source and the other is the system with non-coherent pupil function. When the optics are configured in such a way that a certain pattern would be illuminated by a group of waves diffracted by the pattern itself or an exactly the same pattern, the effective source can be made no longer incoherent. Then the coherence of the effective source can be a new parameter to improve image quality. The simulation shows that the contrast of L/S pattern imaging under the off-axis illumination, for instance, can be boosted up to 99.5% with this system, while to only 90.6% with conventional optics. A new pupil filter is proposed; the area of which is divided into some annular zones to be made mutually incoherent. Then the phase difference becomes less crucial and large DOF can be achieved. The simulation shows that this filter is effective for the exposure of contact hole patterns.
A variety of technologies to improve optical performance in photolithography are surveyed. The technologies are classified according to which component of the optics they work on: the source, the mask, the pupil, or the image. Emphasis is put on, first, the advantages and disadvantages of annular illumination, which are studied by lithography simulation. Second, a polarized mask is proposed. The effect of polarization on imaging, which has not been explored yet, is studied and the result is that TE polarization produces images of the best quality. Third, as a part of pupil function, aberration optimization is discussed. The conclusion is that positive spherical aberration is suitable for projection optics.
These days much attention is being paid to the potential of i-line lithography. We have manufactured a high numer ical aperture ( N. A. ) i-lme lens in order to study this potential. The lens specification is as follows magnification : 1/10 N. A. : 0. 65 field size : 5X5min. In this paper we first compare the difference between the image quality of g-line and i-line optics with the same resolution and then we present the results of our experiment with the new i-line lens which shows the considerable P055 ibil ity of sub-half micron 1 ithography with an i-l me optical stepper. 1.
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