The goal of the conducted work was to fabricate chrome masks on Al2O3 substrates, which could be successfully applied to UV and DUV lithography. The technique is based on electron beam lithography and wet chrome etching in an ceric ammonium nitrate solution. The main advantage of the proposed fabrication method is a major decrease in exposition time due to more effective usage of electron energy. We will demonstrate the use of low electron energy exposition methods with PMMA/MA resist with applied doses of a few μC/cm2. To the best of the author’s knowledge, sapphire substrates have not been previously used in photomasks fabrication. So far, full photomasks sets based on Al2O3 substrates have been manufactured and applied to fabricate the pilot series of acoustic transducers in the AlGaN/GaN heterostructure for piezotronics applications.
Paper presents research on the sub-micron gate, AlGaN /GaN HEMT type transistors, fabrication by e-beam lithography
and lift-off technique. The impact of the electron beam on the resists layer and the substrate was analyzed by MC method
in Casino v3.2 software. The influence of technological process parameters on the metal structures resolution and quality
for paths 100 nm, 300 nm and 500 nm wide and 20 μm long was studied. Qualitative simulation correspondences to the
conducted experiments were obtained.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.