Paper presents research on the sub-micron gate, AlGaN /GaN HEMT type transistors, fabrication by e-beam lithography
and lift-off technique. The impact of the electron beam on the resists layer and the substrate was analyzed by MC method
in Casino v3.2 software. The influence of technological process parameters on the metal structures resolution and quality
for paths 100 nm, 300 nm and 500 nm wide and 20 μm long was studied. Qualitative simulation correspondences to the
conducted experiments were obtained.