Dr. Kosuke Yoshihara Profile

Dr. Kosuke Yoshihara

at Tokyo Electron Kyushu Ltd

SPIE Involvement:

Author

Publications (26)

Proceedings Article | 30 March 2020 Presentation + Paper

EUV resist chemical gradient enhancement by UV flood exposure for improvement in EUV resist resolution, process control, roughness, sensitivity, and stochastic defectivity

Seiji Nagahara, Cong Que Dinh, Keisuke Yoshida, Gosuke Shiraishi, Yoshihiro Kondo, Kosuke Yoshihara, Kathleen Nafus, John Petersen, Danilo De Simone, Philippe Foubert, Geert Vandenberghe, Hans-Jürgen Stock, Balint Meliorisz

Proc. SPIE. 11326, Advances in Patterning Materials and Processes XXXVII

KEYWORDS: Optical lithography, Ultraviolet radiation, Extreme ultraviolet, Extreme ultraviolet lithography, Photoresist processing, Stochastic processes, Absorption

Read Abstract +

Proceedings Article | 8 April 2019 Paper

PSCAR optimization to reduce EUV resist roughness with sensitization using Resist Formulation Optimizer (RFO)

Seiji Nagahara, Cong Que Dinh, Gosuke Shiraishi, Yuya Kamei, Kathleen Nafus, Yoshihiro Kondo, Michael Carcasi, Yukie Minekawa, Hiroyuki Ide, Yuichi Yoshida, Kosuke Yoshihara, Ryo Shimada, Masaru Tomono, Kazuhiro Takeshita, Serge Biesemans, Hideo Nakashima, Danilo De Simone, John Petersen, Philippe Foubert, Peter De Bisschop, Geert Vandenberghe, Hans-Jürgen Stock, Balint Meliorisz

Proc. SPIE. 10960, Advances in Patterning Materials and Processes XXXVI

KEYWORDS: Switching, Calibration, 3D modeling, Extreme ultraviolet, Extreme ultraviolet lithography, Line edge roughness, Stochastic processes

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Proceedings Article | 26 March 2019 Paper

Calibrated PSCAR stochastic simulation

Cong Que Dinh, Seiji Nagahara, Gousuke Shiraishi, Yukie Minekawa, Yuya Kamei, Michael Carcasi, Hiroyuki Ide, Yoshihiro Kondo, Yuichi Yoshida, Kosuke Yoshihara, Ryo Shimada, Masaru Tomono, Teruhiko Moriya, Kazuhiro Takeshita, Kathleen Nafus, Serge Biesemans, John Petersen, Danilo De Simone, Philippe Foubert, Peter De Bisschop, Geert Vandenberghe, Hans-Jürgen Stock, Balint Meliorisz

Proc. SPIE. 10957, Extreme Ultraviolet (EUV) Lithography X

KEYWORDS: Data modeling, Calibration, Ultraviolet radiation, Scanning electron microscopy, Extreme ultraviolet, Line width roughness, Extreme ultraviolet lithography, Modeling and simulation, Stochastic processes

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Proceedings Article | 27 March 2018 Presentation + Paper

Constructing a robust PSCAR process for EUV

Michael Carcasi, Seiji Nagahara, Gosuke Shiraishi, Yukie Minekawa, Hiroyuki Ide, Yoshihiro Kondo, Kosuke Yoshihara, Masaru Tomono, Ryo Shimada, Kazuhiro Takeshita, Teruhiko Moriya, Yuya Kamei, Kathleen Nafus, Serge Biesemans, Hideo Nakashima, Masafumi Hori, Ken Maruyama, Hisashi Nakagawa, Tomoki Nagai, Satoshi Dei, Masayuki Miyake, Takehiko Naruoka, Motoyuki Shima, Geert Vandenberghe, Danilo De Simone, Philippe Foubert, John Petersen, Akihiro Oshima, Seiichi Tagawa

Proc. SPIE. 10583, Extreme Ultraviolet (EUV) Lithography IX

KEYWORDS: Optical lithography, Image processing, Ultraviolet radiation, Extreme ultraviolet, Absorbance, Extreme ultraviolet lithography, Picosecond phenomena, Line edge roughness, Absorption, Chemically amplified resists

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Proceedings Article | 27 March 2018 Presentation + Paper

EUV resist sensitization and roughness improvement by PSCAR with in-line UV flood exposure system

Seiji Nagahara, Michael Carcasi, Gosuke Shiraishi, Yuya Kamei, Kathleen Nafus, Yukie Minekawa, Hiroyuki Ide, Yoshihiro Kondo, Takahiro Shiozawa, Keisuke Yoshida, Masashi Enomoto, Kosuke Yoshihara, Hideo Nakashima, Serge Biesemans, Ryo Shimada, Masaru Tomono, Kazuhiro Takeshita, Teruhiko Moriya, Hayakawa Makoto, Ryo Aizawa, Yoshitaka Konishi, Masafumi Hori, Ken Maruyama, Hisashi Nakagawa, Masayuki Miyake, Tomoki Nagai, Satoshi Dei, Takehiko Naruoka, Motoyuki Shima, Toru Kimura, Geert Vandenberghe, John Petersen, Danilo De Simone, Foubert Philippe, Hans-Jürgen Stock, Balint Meliorisz, Akihiro Oshima, Seiichi Tagawa

Proc. SPIE. 10586, Advances in Patterning Materials and Processes XXXV

KEYWORDS: Calibration, Polymers, Ultraviolet radiation, Extreme ultraviolet, Image enhancement, Extreme ultraviolet lithography, Picosecond phenomena, Floods, Absorption, Chemically amplified resists

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Proceedings Article | 27 March 2017 Presentation + Paper

Photosensitized Chemically Amplified Resist (PSCAR) 2.0 for high-throughput and high-resolution EUV lithography: dual photosensitization of acid generation and quencher decomposition by flood exposure

Seiji Nagahara, Michael Carcasi, Gosuke Shiraishi, Hisashi Nakagawa, Satoshi Dei, Takahiro Shiozawa, Kathleen Nafus, Danilo De Simone, Geert Vandenberghe, Hans-Jürgen Stock, Bernd Küchler, Masafumi Hori, Takehiko Naruoka, Tomoki Nagai, Yukie Minekawa, Tomohiro Iseki, Yoshihiro Kondo, Kosuke Yoshihara, Yuya Kamei, Masaru Tomono, Ryo Shimada, Serge Biesemans, Hideo Nakashima, Philippe Foubert, Elizabeth Buitrago, Michaela Vockenhuber, Yasin Ekinci, Akihiro Oshima, Seiichi Tagawa

Proc. SPIE. 10146, Advances in Patterning Materials and Processes XXXIV

KEYWORDS: Lithography, Polymers, Image processing, Scanners, Ultraviolet radiation, Extreme ultraviolet, Line width roughness, Image enhancement, Extreme ultraviolet lithography, Picosecond phenomena, Line edge roughness, Stochastic processes, Floods, Chemically amplified resists

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Proceedings Article | 27 March 2017 Paper

Simulation and experimentation of PSCAR chemistry for complex structures

Michael Carcasi, Seiji Nagahara, Gosuke Shiraishi, Tomohiro Iseki, Yukie Minekawa, Kosuke Yoshihara, Hisashi Nakagawa, Takehiko Naruoka, Tomoki Nagai, Akihiro Oshima, Seiichi Tagawa

Proc. SPIE. 10143, Extreme Ultraviolet (EUV) Lithography VIII

KEYWORDS: Lithography, Light sources, Polymers, Ultraviolet radiation, Chemistry, Extreme ultraviolet, Extreme ultraviolet lithography, Chemical reactions, Picosecond phenomena, Line edge roughness, Floods, Industrial chemicals, Absorption, Chemically amplified resists

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SPIE Journal Paper | 15 July 2016

Sensitivity enhancement of chemically amplified resists and performance study using extreme ultraviolet interference lithography

Elizabeth Buitrago, Seiji Nagahara, Oktay Yildirim, Hisashi Nakagawa, Seiichi Tagawa, Marieke Meeuwissen, Tomoki Nagai, Takehiko Naruoka, Coen Verspaget, Rik Hoefnagels, Gijsbert Rispens, Gosuke Shiraishi, Yuichi Terashita, Yukie Minekawa, Kosuke Yoshihara, Akihiro Oshima, Michaela Vockenhuber, Yasin Ekinci

JM3 Vol. 15 Issue 03

KEYWORDS: Line width roughness, Extreme ultraviolet lithography, Electroluminescence, Extreme ultraviolet, Scanning electron microscopy, Chemically amplified resists, Lithography, Photomasks, Line edge roughness, Photoresist processing

Read Abstract +

Extreme ultraviolet lithography (EUVL, λ=13.5 nm) is the most promising candidate to manufacture electronic devices for future technology nodes in the semiconductor industry. Nonetheless, EUVL still faces many technological challenges as it moves toward high-volume manufacturing (HVM). A key bottleneck from the tool design and performance point of view has been the development of an efficient, high-power EUV light source for high throughput production. Consequently, there has been extensive research on different methodologies to enhance EUV resist sensitivity. Resist performance is measured in terms of its ultimate printing resolution, line width roughness (LWR), sensitivity [S or best energy (BE)], and exposure latitude (EL). However, there are well-known fundamental trade-off relationships (line width roughness, resolution and sensitivity trade-off) among these parameters for chemically amplified resists (CARs). We present early proof-of-principle results for a multiexposure lithography process that has the potential for high sensitivity enhancement without compromising other important performance characteristics by the use of a “Photosensitized Chemically Amplified Resist™” (PSCAR™). With this method, we seek to increase the sensitivity by combining a first EUV pattern exposure with a second UV-flood exposure (λ=365 nm) and the use of a PSCAR. In addition, we have evaluated over 50 different state-of-the-art EUV CARs. Among these, we have identified several promising candidates that simultaneously meet sensitivity, LWR, and EL high-performance requirements with the aim of resolving line space (L/S) features for the 7- and 5-nm logic node [16- and 13-nm half-pitch (HP), respectively] for HVM. Several CARs were additionally found to be well resolved down to 12- and 11-nm HP with minimal pattern collapse and bridging, a remarkable feat for CARs. Finally, the performance of two negative tone state-of-the-art alternative resist platforms previously investigated was compared to the CAR performance at and below 16-nm HP resolution, demonstrating the need for alternative resist solutions at 13-nm resolution and below. EUV interference lithography (IL) has provided and continues to provide a simple yet powerful platform for academic and industrial research, enabling the characterization and development of resist materials before commercial EUV exposure tools become available. Our experiments have been performed at the EUV-IL set-up in the Swiss Light Source (SLS) synchrotron facility located at the Paul Scherrer Institute (PSI).

Proceedings Article | 25 March 2016 Paper

Novel high sensitivity EUV photoresist for sub-7nm node

Tomoki Nagai, Hisashi Nakagawa, Takehiko Naruoka, Seiichi Tagawa, Akihiro Oshima, Seiji Nagahara, Gosuke Shiraishi, Kosuke Yoshihara, Yuichi Terashita, Yukie Minekawa, Elizabeth Buitrago, Yasin Ekinci, Oktay Yildirim, Marieke Meeuwissen, Rik Hoefnagels, Gijsbert Rispens, Coen Verspaget, Raymond Maas

Proc. SPIE. 9779, Advances in Patterning Materials and Processes XXXIII

KEYWORDS: Semiconductors, Lithography, Electron beam lithography, Metals, Ultraviolet radiation, Photoresist materials, Extreme ultraviolet, Extreme ultraviolet lithography, Picosecond phenomena, Floods

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Proceedings Article | 22 March 2016 Paper

Challenge toward breakage of RLS trade-off for EUV lithography by Photosensitized Chemically Amplified Resist (PSCAR) with flood exposure

Seiji Nagahara, Michael Carcasi, Hisashi Nakagawa, Elizabeth Buitrago, Oktay Yildirim, Gosuke Shiraishi, Yuichi Terashita, Yukie Minekawa, Kosuke Yoshihara, Masaru Tomono, Hironori Mizoguchi, Joel Estrella, Tomoki Nagai, Takehiko Naruoka, Satoshi Dei, Masafumi Hori, Akihiro Oshima, Michaela Vockenhuber, Yasin Ekinci, Marieke Meeuwissen, Coen Verspaget, Rik Hoefnagels, Gijsbert Rispens, Raymond Maas, Hideo Nakashima, Seiichi Tagawa

Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII

KEYWORDS: Polymers, Image processing, Ultraviolet radiation, Extreme ultraviolet, Line width roughness, Extreme ultraviolet lithography, Picosecond phenomena, Line edge roughness, Floods, Absorption

Read Abstract +

This paper proposes a promising approach to break the resolution (R), line-edge-roughness (LER), and sensitivity (S) trade-off (RLS trade-off) relationships that limit the ultimate lithographic performance of standard chemically amplified resists (CAR). This is accomplished in a process that uses a Photosensitized Chemically Amplified Resist (PSCAR) in combination with a flood-exposure in an in-line track connected to a pattern exposure tool. PSCAR is a modified CAR which contains a photosensitizer precursor (PP) in addition to other standard CAR components such as a protected polymer, a photo acid generator (PAG) and a quencher. In this paper, the PSCAR concept and the required conditions in resist formulation are carefully explained. In the PSCAR process, the sensitivity improvement is accomplished by PAG decomposition to selectively generate more acid at the pattern exposed areas during the flood exposure. The selective photosensitization happens through the excitation of the photosensitizer (PS) generated by the deprotection of the PP at the pattern exposed areas. A higher resist chemical gradient which leads to an improved resolution and lower LER values is also predicted using the PSCAR simulator. In the PSCAR process, the improved chemical gradient can be realized by dual acid quenching steps with the help of increased quencher concentration. Acid quenching first happens simultaneously with acid catalytic PP to PS reactions. As a result, a sharpened PS latent image is created in the PSCAR. This image is subsequently excited by the flood exposure creating additional acid products at the pattern exposed areas only. Much the same as in the standard CAR system, unnecessary acid present in the non-pattern exposed areas can be neutralized by the remaining quencher to therefore produce sharper acid latent images. EUV exposure results down to 15 nm half pitch (HP) line/space (L/S) patterns using a PSCAR resist indicate that the use of PSCAR has the potential to improve the sensitivity of the system while simultaneously improving the line-width-roughness (LWR) with added quencher and flood exposure doses. In addition, improved across-wafer critical dimension uniformity (CDU) is realized by the use of a PSCAR in combination with a flood exposure using pre α UV exposure module.

Proceedings Article | 18 March 2016 Paper

Sensitivity enhancement of chemically amplified resists and performance study using EUV interference lithography

Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII

KEYWORDS: Semiconductors, Lithography, Light sources, Manufacturing, Electroluminescence, Scanning electron microscopy, Electronic components, Photomasks, Extreme ultraviolet, Line width roughness, Extreme ultraviolet lithography, Line edge roughness, Floods, Industrial chemicals, Chemically amplified resists

Read Abstract +

Extreme ultraviolet lithography (EUVL, λ = 13.5 nm) is the most promising candidate to manufacture electronic devices for future technology nodes in the semiconductor industry. Nonetheless, EUVL still faces many technological challenges as it moves toward high-volume manufacturing (HVM). A key bottleneck from the tool design and performance point of view has been the development of an efficient, high power EUV light source for high throughput production. Consequently, there has been extensive research on different methodologies to enhance EUV resist sensitivity. Resist performance is measured in terms of its ultimate printing resolution, line width roughness (LWR), sensitivity (S or best energy BE) and exposure latitude (EL). However, there are well-known fundamental trade-off relationships (LRS trade-off) among these parameters for chemically amplified resists (CARs). Here we present early proof-of-principle results for a multi-exposure lithography process that has the potential for high sensitivity enhancement without compromising other important performance characteristics by the use of a Photosensitized Chemically Amplified Resist (PSCAR). With this method, we seek to increase the sensitivity by combining a first EUV pattern exposure with a second UV flood exposure (λ = 365 nm) and the use of a PSCAR. In addition, we have evaluated over 50 different state-of-the-art EUV CARs. Among these, we have identified several promising candidates that simultaneously meet sensitivity, LWR and EL high performance requirements with the aim of resolving line space (L/S) features for the 7 and 5 nm logic node (16 nm and 13 nm half-pitch HP, respectively) for HVM. Several CARs were additionally found to be well resolved down to 12 nm and 11 nm HP with minimal pattern collapse and bridging, a remarkable feat for CARs. Finally, the performance of two negative tone state-of-the-art alternative resist platforms previously investigated was compared to the CAR performance at and below 16 nm HP resolution, demonstrating the need for alternative resist solutions at 13 nm resolution and below. EUV interference lithography (IL) has provided and continues to provide a simple yet powerful platform for academic and industrial research enabling the characterization and development of new resist materials before commercial EUV exposure tools become available. Our experiments have been performed at the EUV-IL set-up in the Swiss Light Source (SLS) synchrotron facility located at the Paul Scherrer Institute (PSI).

Proceedings Article | 20 March 2012 Paper

Resist process optimization for further defect reduction

Keiichi Tanaka, Tomohiro Iseki, Hiroshi Marumoto, Koji Takayanagi, Yuichi Yoshida, Ryouichi Uemura, Kosuke Yoshihara

Proc. SPIE. 8325, Advances in Resist Materials and Processing Technology XXIX

KEYWORDS: Optical lithography, Polymers, Capillaries, Particles, NOx, Bridges, Photoresist processing, Semiconducting wafers, Yield improvement, Wafer manufacturing

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Proceedings Article | 16 April 2011 Paper

Resist dispense system for further defect reduction

Yusuke Yamamoto, Kouzo Nishi, Koji Takayanagi, Takahiro Okubo, Toshinobu Furusho, Kosuke Yoshihara, Tsuyoshi Shibata

Proc. SPIE. 7972, Advances in Resist Materials and Processing Technology XXVIII

KEYWORDS: Lithography, Diffractive optical elements, Error analysis, Coating, Control systems, Bridges, Photoresist processing, Semiconducting wafers, Factor analysis, Liquids

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Proceedings Article | 31 March 2010 Paper

Productivity improvement in the wafer bevel and backside cleaning before exposure

Yoichi Tokunaga, Shuuichi Nishikido, Kousuke Yoshihara, Zoe Hong, Marlene Strobl, Yu Lin

Proc. SPIE. 7639, Advances in Resist Materials and Processing Technology XXVII

KEYWORDS: Optical lithography, Contamination, Image processing, Particles, Coating, Immersion lithography, Head-mounted displays, Thin film coatings, Photoresist processing, Semiconducting wafers

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Proceedings Article | 1 April 2009 Paper

Non-topcoat process development for ArF immersion lithography

Takehiko Naruoka, Nobuji Matsumura, Akimasa Soyano, Shiro Kusumoto, Yoshikazu Yamaguchi, Hiroshi Arima, Yuichi Yoshida, Kousuke Yoshihara, Tsuyoshi Shibata

Proc. SPIE. 7273, Advances in Resist Materials and Processing Technology XXVI

KEYWORDS: Lithography, Water, Coating, Surface properties, Line width roughness, Immersion lithography, Thin film coatings, Photoresist processing, Semiconducting wafers, Defect inspection

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Proceedings Article | 1 April 2009 Paper

Study of residue type defect formation mechanism and the effect of advanced defect reduction (ADR) rinse process

Hiroshi Arima, Yuichi Yoshida, Kosuke Yoshihara, Tsuyoshi Shibata, Yuki Kushida, Hiroki Nakagawa, Yukio Nishimura, Yoshikazu Yamaguchi

Proc. SPIE. 7273, Advances in Resist Materials and Processing Technology XXVI

KEYWORDS: Lithography, Polymers, Image processing, Materials processing, Dynamic light scattering, Photoresist materials, Photomasks, Photoresist processing, Semiconducting wafers, Photoresist developing

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Proceedings Article | 18 March 2009 Paper

Investigation of EUV-process sensitivities for wafer-track processing

Neil Bradon, Heiko Weichert, K. Nafus, S. Hatakeyama, J. Kitano, H. Kosugi, K. Yoshihara, M. Goethals, J. Hermans

Proc. SPIE. 7271, Alternative Lithographic Technologies

KEYWORDS: Lithography, Image processing, Finite element methods, Extreme ultraviolet, Extreme ultraviolet lithography, Double patterning technology, Critical dimension metrology, Photoresist processing, Semiconducting wafers, Standards development

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Proceedings Article | 4 April 2008 Paper

Process development for high scan speed ArF immersion lithography

Nobuji Matsumura, Norihiko Sugie, Kentaro Goto, Koichi Fujiwara, Yoshikazu Yamaguchi, Hirokazu Tanizaki, Katsushi Nakano, Tomoharu Fujiwara, Shinya Wakamizu, Hirofumi Takeguchi, Hiroshi Arima, Hideharu Kyoda, Kosuke Yoshihara, Junichi Kitano

Proc. SPIE. 6923, Advances in Resist Materials and Processing Technology XXV

KEYWORDS: Semiconductors, Lithography, Bridges, Line width roughness, Immersion lithography, Thin film coatings, Photoresist processing, Semiconducting wafers, 193nm lithography, Defect inspection

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Proceedings Article | 26 March 2008 Paper

Application technology of stacked film with highly controlled edge structure

Katsunori Ichino, Keiji Tanouchi, Tomohiro Iseki, Nobuhiro Ogata, Taro Yamamoto, Kosuke Yoshihara, Akihiro Fujimoto

Proc. SPIE. 6923, Advances in Resist Materials and Processing Technology XXV

KEYWORDS: Particles, Ions, Silicon, Coating, Control systems, Immersion lithography, Head-mounted displays, Thin film coatings, Semiconducting wafers, Natural surfaces

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Proceedings Article | 30 March 2007 Paper

Process optimization for developer soluble immersion topcoat material

Hiroki Nakagawa, Kentarou Goto, Motoyuki Shima, Junichi Takahashi, Tsutomu Shimokawa, Katsunori Ichino, Naohiko Nagatani, Hideharu Kyoda, Kosuke Yoshihara

Proc. SPIE. 6519, Advances in Resist Materials and Processing Technology XXIV

KEYWORDS: Lithography, Image processing, Molecules, Coating, Materials processing, Immersion lithography, Thin film coatings, Photoresist processing, Semiconducting wafers, Standards development

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Proceedings Article | 29 March 2006 Paper

Defect reduction by using a new rinse solution for 193-nm conventional and immersion lithography

Osamu Miyahara, Takeshi Shimoaoki, Ryoichiro Naito, Kousuke Yoshihara, Junichi Kitano

Proc. SPIE. 6153, Advances in Resist Technology and Processing XXIII

KEYWORDS: Lithography, Etching, Satellites, Laser processing, Scanning electron microscopy, Immersion lithography, Thin film coatings, Photoresist processing, Semiconducting wafers, Liquids

Read Abstract +

Semiconductor manufacturing technology has progressed remarkably in recent years. This progress has been accompanied by demands to reduce the feature size used in photolithography processing, resulting in a reduction of the exposure wavelength from 248 nm (KrF laser) to 193 nm (ArF laser). ArF immersion lithography is now being actively researched and developed with the aim of implementing the 45-nm technology node. Chemically amplified (CA) resists have been introduced to cope with these reduced feature sizes, making it all the more important to reduce defects produced in the lithography process. In recent years, the behavior of defects in a CA resist has been clarified by studies involving various microprobe analysis techniques. Basically, it has been reported that water-soluble defects such as "satellites" and water-insoluble defects such as "resist residues" are generated by various factors. Furthermore, the reduction in pattern sizes has led to the identification of new types of resist-related defects such as "missing-hole" defects in contact-hole (C/H) patterns and "bridging" defects in line-and-space (L/S) patterns. Although the satellite, resist-residue, and missing-hole problems have been addressed by implementing new ideas such as extended rinse times, improved development recipes, and the introduction of post-development rinse stages and improved rinse recipes, it cannot be said that these measures are sufficient in terms of processing throughput or effectiveness. In this paper, we investigate the effect of adding chemical additives to the de-ionized water (DIW) rinse used in the development rinse process. Our studies confirm that these additives significantly reduce the quantity of minute defects generated on the wafer without degrading lithography performance, and thus help to improve process throughput. We also investigate the application of this method to immersion lithography, and confirm that this additive procedure also reduces the quantity of defects in immersion lithography processes.

Proceedings Article | 14 May 2004 Paper

Critical dimension control in 90nm - 65nm node

Yuichi Terashita, Mamoko Shizukuishi, Hideo Shite, Hideharu Kyoda, Kazuhiko Oshima, Kosuke Yoshihara

Proc. SPIE. 5376, Advances in Resist Technology and Processing XXI

KEYWORDS: Optical lithography, Diffusion, Manufacturing, Photoresist materials, Photomasks, Semiconductor manufacturing, Critical dimension metrology, Semiconducting wafers, Photoresist developing, Temperature metrology

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Proceedings Article | 14 May 2004 Paper

Airborne contamination control for 157-nm lithography: influence of ammonia contamination

Hidefumi Matsui, Junichi Kitano, Kosuke Yoshihara, Etsurou Kawaguchi, Takamitsu Furukawa, Kentaro Matsunaga, Toshiro Itani, Kiyoshi Fujii

Proc. SPIE. 5376, Advances in Resist Technology and Processing XXI

KEYWORDS: Lithography, Contamination, Polymers, Spectroscopy, Coating, Adsorption, Transmittance, Critical dimension metrology, Contamination control, Polymer thin films

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Proceedings Article | 12 June 2003 Paper

Improvement of CD controllability in developer process

Hideharu Kyoda, Atsushi Okouchi, Hirofumi Takeguchi, Hyun Woo Kim, Taro Yamamoto, Kosuke Yoshihara

Proc. SPIE. 5039, Advances in Resist Technology and Processing XX

KEYWORDS: Cadmium, Polymers, Control systems, Process control, Photomasks, Critical dimension metrology, Photoresist processing, Semiconducting wafers, Liquids, Chemically amplified resists

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Proceedings Article | 12 June 2003 Paper

Critical dimension (CD) control in 157-nm lithography

Shinya Hori, Kosuke Yoshihara, Hideharu Kyoda, Hidefumi Matsui, Takamitsu Furukawa, Seiro Miyoshi, Etsurou Kawaguchi, Toshiro Itani

Proc. SPIE. 5039, Advances in Resist Technology and Processing XX

KEYWORDS: Lithography, Contamination, Polymers, Coating, Control systems, Critical dimension metrology, Line edge roughness, Fluorine, Photoresist processing, Semiconducting wafers

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Proceedings Article | 24 July 2002 Paper

Behavior and control of resist dissolution in the development process

Yoshifumi Takai, James Mulhall, Kosuke Yoshihara, Hideharu Kyoda, Hirofumi Takeguchi

Proc. SPIE. 4690, Advances in Resist Technology and Processing XIX

KEYWORDS: Reticles, Cadmium, Control systems, Process control, Ear, Critical dimension metrology, Manufacturing equipment, Photoresist processing, Semiconducting wafers, Chemically amplified resists

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Showing 5 of 26 publications

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