Drain current-gate voltage Id(Vg) characteristics and power spectral density of drain current fluctuations were obtained on SiGe channel pMOSFETs and on their Si homologues, for drain current intensities varied from deep subthreshold to strong inversion regions. Devices with 2.2nm thick SiO2 gates and channel lengths 50nmd(Vg) characteristics, served for calculating the power spectral density versus drain current functions. The latter required adjusting the interface trap density and a parameter αc, accounting for the effect of the interface charge fluctuations on the hole mobility fluctuations, significant at high levels of trap filling i.e. high drain current. We found that the power spectral density in the SiGe devices was up to 10 times lower than in the Si controls at sufficiently high drain currents. The simulation, accounting for the data, required a significant lowering of αc for the SiGe channel. That implies that the low frequency noise reduction in SiGe MOSFETs results from a weaker interaction of the SiGe holes with the interface charges. The sub-0.1μm channel devices show a similar noise lowering, in spite of the significant hole mobility degradation.