Our goal is to fabricate a laser diode 2D array which combines the properties of both VCSEL and edge emitting laser. Proposed light emitter will have a horizontal cavity with 450 deflectors. The role of these deflectors would be to deflect light perpendicular to the cavity, achieving vertical out-coupling. The most challenging part of this project is the fabrication of the micro-mirrors which act as both as beam deviating mirrors and cavity forming mirrors. Owing to the excellent thermal conductivity of GaN substrates the properties of such a 2D array should be better than of conventional nitride laser diode arrays, not even mentioning nitride-based stacked bars systems. In this paper I will describe our new device design and processing, giving insight to its possible applications and advantages over simple light emitting laser diode.
The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from UV, ~380 nm, to the visible ~530 nm, by tuning the indium content of the laser GaInN quantum well. This makes nitride laser diodes suitable for a vast range of applications, but most of them require not only the proper wavelength emission, but also high optical power and good beam quality. The typical approach - wide ridge waveguide - often suffers from spatial multimode emission (low beam quality). We report our initial results with tapered GaN lasers to increase the maximum optical power of the device with a good beam profile. This combination opens new possibilities for GaN laser diode technology in quantum technologies including optical atomic clocks and quantum gravity sensors.