This paper studies the feasibility of using GaN/InGaN quantum dot as the Intermediate Band Solar Cell.
Different dot sizes are compared and the result shows significant differences due to the quantum confinement
strength. The band structure and transition rate in the quantum dot are calculated. For the smaller quantum
dot, the efficiency is much higher because of the larger separation of IB band to conduction band. However, the
contribution of intermediate bands is small and the bottle neck is found as the low transition rate between IBs
and bulk state.