AlGaInAs/InP strained MQW reversed-mesa RWG structure is proposed to reduce leakage current and improve linearity, and applied to make high linearity and high power 1.3μm DFB-LD. For 1.3μm AlGaInAs strained MQW DFB LD, the lasers operated with 10mA threshold current, 0.48mW/mA slope efficiency for one facet, 45dB SMSR. The -3dB cutoff frequency is 14GHz, and the eye pattern is opened widely at 10Gb/s. Under PAL 59 channels test, output power exceeds 15mW with COS<-69.4dBc, CTB<-69.4dBc, CNR<-52dB, which is the first reported RWG 1.3μm DFB-LD for optical CATV application. This implies that AlGaInAs/InP strained MQW reversed-mesa RWG structure could effectively reduce leakage current.
Conference Committee Involvement (3)
Optoelectronic Materials and Devices for Optical Communications
7 November 2005 | Shanghai, China
Semiconductor and Organic Optoelectronic Materials and Devices