Devices composed of nanoelectromechanical systems (NEMS) possess distinguished properties which make them quite
suitable for a variety of applications including ultra-high-frequency (UHF) resonators. However, most GHz resonators
have low quality factor even though it has been well above 10<sup>3</sup> ~ 10<sup>5</sup> for very-high-frequency (VHF) microresonators.
The motivation for our investigation of single crystal silicon nanoresonator arises from both its technological importance
and its extraordinary surface effects. Our simulation results show that the quality factor decreased in a nearly linear
manner as the surface area to volume ratio (SVR) was increased, which suggests that surface losses play a significant
role in determining the quality factor of nanoresonators.