A novel single-stranded DNA (ssDNA) model based on the clustered atomistic method is conducted to simulate the meso-mechanics of ssDNA molecule. Through the validation of the single molecular experiment, the proposed ssDNA model could represent the ssDNA molecule in different counter length, and the mechanical characteristic of the ssDNA molecule in external tensile loading could be elucidated. Furthermore, the characteristic of the validated ssDNA model is adapted in the double-stranded DNA (dsDNA) model. The simulation result of the dsDNA model under external loading reveals mechanical behavior of the dsDNA B-S structural transition. Good agreement is achieved between the numerical simulation and single molecular manipulation experimental result, and the mechanical behavior of stretching nicked dsDNA could be revealed.
The tensile strained Si, based on the lattice misfit between Si and SiGe, gives higher speed and higher drive current for the metal oxide silicon field effect transistors. Based on the strained Si technology, a tri-gate CMOS transistor is further applied in the current leakage control and chip performance enhancement. Moreover, the "highly-tensile" silicon nitride capping layer is also applied for the strained Si applications. The stress from the silicon nitride capping layer is uniaxially transferred to the NMOS channel through the source-drain region to create tensile strain in NMOS channel. This paper proposes a finite element method analysis to study the strain distribution of small island size (<200nm) of Si/SiGe strained silicon based tri-gate CMOS transistor and the "highly-tensile" SiNx/Si stacking devices. In the tri-gate CMOS transistor case, the simulation results show that the bending effect from the edge can significantly affect the strain on the surface of the Si channel layer, and a compressive strain or reduced tensile strain occurs at the edge of the Si channel layer. Moreover, the results also indicate that the length of the Si/SiGe channel and the thickness of the Si/SiGe stack layers show significant effects of the strain distribution on the surface of the Si channel layer. In terms of the "highly-tensile" SiNx/Si analysis, the results show that the "highly-tensile" silicon nitride could provide beneficial tensile strain for the channel of the NMOS transistor to enhance the device speed.
This paper investigates the transient heat transfer behavior and doping concentration of the thermomechanical microprobe using the transient finite element method and SUPREM-IV.GS software for the experimental validation. The thermomechanical microprobe is a newly developed high-density data storage technique. Heat management, on the other hand, is an extremely critical issue in high-density data storage application. This study explores the transient heat transfer behavior of the thermomechanical microprobe through measurement and simulation. In order to study this transient heat transfer behavior, a microprobe is fabricated, and the transient finite element method is adopted for optimizing and analyzing the performance of the microprobe. Furthermore, the doping parameter would govern the data writing and reading response of the thermomechanical microprobe. To optimize the microprobe's performance, this paper also utilizes the process simulation software SUPREM-IV.GS as well as the area weighting method to predict the electrical characteristic of the microprobe. The main goal of this research is to develop a ethodology for the required heating/cooling rate to reach the expected temperature which is affected by the different geometric specifications of the cantilever beam structure of the microprobes. Furthermore, this research fabricates the thermomechanical microprobe using complementary metal oxide semiconductor (CMOS)-compatible micromechanical manufacturing technology. The results show that the required time response to reach the designed heating temperature is about a few microseconds for a small-sized heater. Moreover, in terms of temperature cooling status, we find that the larger dimension of a cantilever beam can enhance the heat dissipation from the heater in order for the expected temperature to be reached within the time range of microseconds. In addition, the resistivity of the heater obtained from the simulation prediction based on the SUMPEM-IV.GS and the area weighting method corroborates the experiment data in the literature.