Dr. Kurt G. Ronse Profile

Dr. Kurt G. Ronse

Director Lithography at imec

Publications (91)

Proceedings Article | 10 April 2024 Presentation + Paper

Best focus alignment through pitch strategies for hyper-NA EUV lithography

Inhwan Lee, Joern-Holger Franke, Vicky Philipsen, Kurt Ronse, Stefan De Gendt, Eric Hendrickx

Proceedings Volume 12953, 129530O (2024) https://doi.org/10.1117/12.3010846

KEYWORDS: 3D mask effects, Light sources and illumination, SRAF, Diffraction, Semiconducting wafers, Printing, Extreme ultraviolet lithography, Critical dimension metrology, 3D modeling

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SPIE Journal Paper | 14 November 2023

Hyper NA EUV lithography: an imaging perspective

Inhwan Lee, Joern-Holger Franke, Vicky Philipsen, Kurt Ronse, Stefan De Gendt, Eric Hendrickx

JM3, Vol. 22, Issue 04, 043202, (November 2023) https://doi.org/10.1117/12.10.1117/1.JMM.22.4.043202

KEYWORDS: Nanoimprint lithography, Extreme ultraviolet, Polarization, Polarizers, Extreme ultraviolet lithography, Light sources and illumination, 3D mask effects, Diffraction, 3D modeling, Polarized light

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BackgroundTo print ever smaller features at high contrast projection lithography technology has evolved to shorter wavelength light and larger numerical aperture (NA). After enabling the extreme-ultraviolet (EUV) wavelength, the industry is looking into increasing the NA. At NA’s much higher than 0.55, new effects such as polarization will start to play a role, and larger impact of ultimate mask resolution and material interactions is expected. Already at NA 0.55, a small contrast loss is predicted due to the use of unpolarized light in the scanner. Further increasing the NA beyond 0.55 will exacerbate the contrast loss. In addition, the larger incidence angles on mask when the NA increases above 0.55, will further enhance the mask 3D (M3D) effects forcing additional mask changes.AimStudy the potential imaging challenges regarding NA scaling beyond 0.55 and identify if the imaging can still work at this higher NA and whether specific changes to the mask stack are required.ApproachWe study the polarization effects in detail and assess their impact quantitatively for a set of generic building blocks. To enable proper imaging at high incidence angles, new mask architectures that include changes in the EUV mask absorber and multilayer will have to be tested using rigorous simulations.ResultsThe current periodic Mo/Si multilayer concept is adequate to support 0.75 NA performance. For NA 0.85 aperiodic multilayers would be beneficial. Novel mask absorber materials currently being developed for the 0.33 and 0.55 NA systems are adequate to support 0.75 NA imaging. M3D phase effects slightly increase with NA but can be compensated by adjusting absorber n / k and thickness. Regions of interest in the absorber space remain low-n and high-k. NA 0.75 promises significant normalized image log slope (NILS) gain over NA 0.55 in the L/S pitch range of 20 to 30 nm even when considering M3D effects, existing multilayer periodicity, and no polarizer. For contact holes (CHs), NILS > 2.4 without polarizer can be achieved in both dark and bright mask tonalities for pitches 19 nm and above, even when considering M3D effects, existing multilayer periodicity, and no polarizer. Even if polarization control could provide significant NILS gain for lines and spaces, EUV polarizer may not be worth it in terms of the balance between contrast and throughput. Further validation should be done using a full stochastic resist model in the future. For CHs, the NILS gain possible by polarization is too small to warrant the lost dose.ConclusionsWe identified clear advantages of high NA imaging but found no significant blocking factors for the imaging of the investigated patterns (single pitch lines/spaces and CHs).

Proceedings Article | 27 September 2023 Presentation

Statuses and challenges of high NA EUV eco-system

Kurt Ronse

Proceedings Volume PC12915, PC1291501 (2023) https://doi.org/10.1117/12.3012427

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Proceedings Article | 28 April 2023 Poster + Paper

Productivity enhancement study: yield, cost, and turn-around-time modeling for EUV and high NA EUV

Yi-Pei Tsai, Yi-Han Chang, Jane Wang, Darko Trivkovic, Kurt Ronse, Ryoung-Han Kim

Proceedings Volume 12495, 124951U (2023) https://doi.org/10.1117/12.2658866

KEYWORDS: Extreme ultraviolet, Semiconducting wafers, Photomasks, Fin field effect transistors, Optical lithography, Front end of line, Manufacturing, Back end of line, Yield improvement, Extreme ultraviolet lithography

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Proceedings Article | 28 April 2023 Presentation + Paper

Hyper-NA EUV lithography: an imaging perspective

Inhwan Lee, Joern-Holger Franke, Kurt Ronse, Stefan De Gendt, Vicky Philipsen, Eric Hendrickx

Proceedings Volume 12494, 1249405 (2023) https://doi.org/10.1117/12.2659153

KEYWORDS: Extreme ultraviolet, Polarization, Light sources and illumination, Polarizers, 3D mask effects, 3D modeling, Diffraction, Polarized light, Refractive index, EUV optics

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Proceedings Article | 26 May 2022 Presentation + Paper

A yield prediction model and cost of ownership for productivity enhancement beyond imec 5nm technology node

Yi-Pei Tsai, Yi-Han Chang, Jane Wang, Darko Trivkovic, Kurt Ronse, Ryoung-Han Kim

Proceedings Volume 12052, 1205203 (2022) https://doi.org/10.1117/12.2617415

KEYWORDS: Extreme ultraviolet, Semiconducting wafers, Photomasks, Manufacturing, Optical lithography, Yield improvement, Front end of line, Semiconductor manufacturing, Performance modeling, Back end of line

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Proceedings Article | 12 October 2021 Presentation + Paper

Analysis of advanced technology nodes and h-NA EUV introduction: a cost perspective

Jane Wang, Darko Trivkovic, Pieter Weckx, Alessio Spessot, Kurt Ronse, Ryoung Han Kim, Geert Hellings, Julien Ryckaert, Gioele Mirabelli

Proceedings Volume 11854, 118540D (2021) https://doi.org/10.1117/12.2600804

KEYWORDS: Extreme ultraviolet, Optical lithography, Metals, Lithography, Extreme ultraviolet lithography, Back end of line, Semiconducting wafers, Standards development, Front end of line, Very large scale integration

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Proceedings Article | 26 February 2021 Presentation + Paper

28nm pitch single exposure patterning readiness by metal oxide resist on 0.33NA EUV lithography

D. De Simone, L. Kljucar, P. Das, R. Blanc, C. Beral, J. Severi, N. Vandenbroeck, P. Foubert, A. Charley, A. Oak, D. Xu, W. Gillijns, J. Mitard, Z. Tokei, M. van der Veen, N. Heylen, L. Teugels, Q. T. Le, F. Schleicher, P. Leray, K. Ronse, Il Hwan Kim, Insung Kim, Changmin Park, Jisun Lee, Koungmin Ryu, P. De Schepper, J. Doise, M. Kocsis

Proceedings Volume 11609, 116090Q (2021) https://doi.org/10.1117/12.2584713

KEYWORDS: Extreme ultraviolet lithography, Optical lithography, Oxides, Metals, Extreme ultraviolet, Scanners, Scanning electron microscopy, Photoresist processing, Lithography, Line edge roughness

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For many years traditional 193i lithography has been extended to the next technology node by means of multi-patterning techniques. However recently such a 193i technology became challenging and expensive to push beyond the technology node for complex features that can be tackled in a simpler manner by the Extreme UltraViolet Lithography (EUVL) technology. Nowadays, EUVL is part of the high-volume manufacturing device landscape and it has reached a critical decision point where one can push further the single print on 0.33NA full field scanner or move to a EUV double patterning technology with more relaxed pitches to overcome current 0.33NA stochastic limits. In this work we have selected the 28nm pitch dense line-space (P28) as critical decision check point. We have looked at the 0.33NA EUV single print because it is more cost effective than 0.33NA EUV double patterning. In addition, we have conducted a process feasibility study as P28 in single print is close to the resolution limit of the 0.33NA EUV full field scanner. We present the process results on 28nm dense line-space patterning by using Inpria’s metal-oxide (MOx) EUV resist. We discuss the lithographic and etching process challenges by looking at resist sensitivity, unbiased line edge roughness (LER) and nano patterning failures after etching (AE), using broad band plasma (BBP) and e-beam (EB) defectivity inspection tools. To get further understanding on the P28 single patterning capability we have integrated the developed EUV MOx process in a relevant iN7 technology test vehicle by developing a full P28 metallization module with ruthenium. In such a way we were able to carry on electrical tests on metallized serpentine, fork-fork and tip-to-tip structures designed with a purpose of enabling further learning on pattern failures through electrical measurements. Finally, we conclude by showing the readiness of P28 single exposure using Inpria’s MOx process on a 0.33NA EUV full field scanner.

Proceedings Article | 29 August 2019 Paper

EUVL is being inserted in manufacturing in 2019: What are the mask related challenges remaining?

Kurt Ronse, Rik Jonckheere, Emily Gallagher, Vicky Philipsen, Eric Hendrickx, Ryoung Han Kim, Lieve Van Look

Proceedings Volume 11177, 111770A (2019) https://doi.org/10.1117/12.2535821

KEYWORDS: Extreme ultraviolet, Photomasks, Pellicles, Extreme ultraviolet lithography, Manufacturing, Semiconducting wafers, High volume manufacturing, Critical dimension metrology, Inspection, Logic

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Proceedings Article | 4 June 2019 Paper

Electrically measurable test structures to capture and classify EUV stochastics

Hemant Vats, Yasser Sherazi, Ryan Ryoung Han Kim, Kurt Ronse, Youssef Drissi

Proceedings Volume 10957, 109571M (2019) https://doi.org/10.1117/12.2515418

KEYWORDS: Transistors, Logic, Extreme ultraviolet, Stochastic processes, Metals, Printing, Bridges, Semiconducting wafers, Optical lithography, Lithography

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Proceedings Article | 26 March 2019 Presentation + Paper

Staggered pillar patterning using 0.33NA EUV lithography

Danilo De Simone, Lieve Van Look, Nouredine Rassoul, Frederic Lazzarino, Pieter Vanelderen, Gian Lorusso, Romuald Blanc, Jeroen Van de Kerkhove, Roberto Fallica, Chan-Ha Park, Amir-Hossein Tamaddon, Nadia Vandenbroeck, Frieda Van Roey, Anne-Laure Charley, Geert Vandenberghe, Kurt Ronse, Kilyoung Lee, Junghyung Lee, Sarohan Park, Chang-Moon Lim

Proceedings Volume 10957, 109570T (2019) https://doi.org/10.1117/12.2515170

KEYWORDS: Optical lithography, Extreme ultraviolet lithography, Semiconducting wafers, Etching, Extreme ultraviolet, Critical dimension metrology, Image processing, Failure analysis, Scanning electron microscopy, Image analysis

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Proceedings Article | 2 August 2018 Presentation + Paper

A holistic metrology sensitivity study for pattern roughness quantification on EUV patterned device structures with mask design induced roughness

Kurt Ronse, Bogumila Kutrzeba-Kotowska , Gaoliang Dai, Frank Scholze, Igor Turovets, Laurens Kwakman, Kenslea Anne, Brid Connolly, Markus Bender, Sven Krannich, Vladislav Kaplan, Maxim Rabinovitch, Ishai Swrtsband, Hayley Johanesen, Nikolai Kasper, Ilan Englard, Shimon Levi, Romy Wende

Proceedings Volume 10585, 1058511 (2018) https://doi.org/10.1117/12.2297265

KEYWORDS: Metrology, Extreme ultraviolet, Photomasks, Semiconducting wafers, Signal processing, Transmission electron microscopy, Atomic force microscopy, Etching

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Proceedings Article | 23 April 2018 Paper

EUVL Gen 2.0: key requirements for constraining semiconductor cost in advanced technology node manufacturing

Arindam Mallik, Peter Debacker, Greg McIntyre, Ryoung-Han Kim, Kurt Ronse

Proceedings Volume 10583, 1058326 (2018) https://doi.org/10.1117/12.2297447

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Optical lithography, Semiconductors, Lithography, Semiconducting wafers, Metals, Manufacturing, Double patterning technology, Photomasks

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Proceedings Article | 23 March 2018 Presentation + Paper

Electrical comparison of iN7 EUV hybrid and EUV single patterning BEOL metal layers

Christopher Wilson, Basoene Briggs, Joost Bekaert, Victor Blanco, Bogumila Kutrzeba Kotowska, Janko Versluijs, Stefan Decoster, Ming Mao, Marleen van der Veen, Nicolas Jourdan, Zaid El-Mekki, Nancy Heylen, Patrick Verdonck, Danny Wan, Arindam Mallik, Ryoung-han Kim, Greg McIntyre, Kurt Ronse, Jürgen Bömmels, Zsolt Tőkei, Dan Mocuta, Dieter Van den Heuvel, Peter De Bisschop, Eric Hendrickx, Stéphane Larivière, Els Kesters, Christophe Béral, Ivan Ciofi

Proceedings Volume 10583, 105830U (2018) https://doi.org/10.1117/12.2299389

KEYWORDS: Extreme ultraviolet, Optical lithography, Etching, Tin, Resistance, Metals, Semiconducting wafers, Critical dimension metrology, Photomasks, Copper

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Proceedings Article | 20 March 2018 Presentation + Paper

IMEC N7, N5 and beyond: DTCO, STCO and EUV insertion strategy to maintain affordable scaling trend

Ryoung-han Kim, Yasser Sherazi, Peter Debacker, Praveen Raghavan, Julien Ryckaert, Arindam Malik, Diederik Verkest, Jae Uk Lee, Werner Gillijns, Ling Ee Tan, Victor Blanco, Kurt Ronse, Greg McIntyre

Proceedings Volume 10588, 105880N (2018) https://doi.org/10.1117/12.2299335

KEYWORDS: Optical lithography, Extreme ultraviolet, Metals, Logic, Manufacturing, Lithography, Back end of line, Extreme ultraviolet lithography, New and emerging technologies

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Proceedings Article | 28 March 2016 Paper

Metal stack optimization for low-power and high-density for N7-N5

P. Raghavan, P. Debacker, S. M. Y. Sherazi, F. Firouzi, L. Matti, R. Baert, D. Trivkovic, V. Gerousis, J. Ryckaert, D. Verkest, G. McIntyre, K. Ronse, Z. Tokei, M. Dusa

Proceedings Volume 9781, 97810Q (2016) https://doi.org/10.1117/12.2238928

KEYWORDS: Metals, Optical lithography, Resistance, Extreme ultraviolet, Capacitance, Semiconducting wafers, Logic, Optical design, Copper, Photomasks

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Proceedings Article | 16 April 2015 Paper

Maintaining Moore’s law: enabling cost-friendly dimensional scaling

Arindam Mallik, Julien Ryckaert, Abdelkarim Mercha, Diederik Verkest, Aaron Thean, Kurt Ronse

Proceedings Volume 9422, 94221N (2015) https://doi.org/10.1117/12.2086085

KEYWORDS: Extreme ultraviolet lithography, Optical lithography, Surface plasmons, Extreme ultraviolet, Photomasks, Back end of line, Lithography, Metals, Semiconducting wafers, Semiconductors

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Proceedings Article | 18 March 2015 Paper

Impact of a SADP flow on the design and process for N10/N7 metal layers

S. M. Y. Sherazi, W. Gillijns, D. Trivkovic, B. Vandewalle, P. Raghavan, J. Ryckaert, D. Verkest, K. Ronse, G. McIntyre, V. Gerousis, B. Chava, K. Mercha

Proceedings Volume 9427, 942709 (2015) https://doi.org/10.1117/12.2085923

KEYWORDS: Metals, Photomasks, Semiconducting wafers, Lithography, Optical lithography, Standards development, Capacitance, Optical proximity correction, Scanning electron microscopy, Manufacturing

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Proceedings Article | 18 March 2015 Paper

DTCO at N7 and beyond: patterning and electrical compromises and opportunities

Diederik Verkest, Julien Ryckaert, Praveen Raghavan, Arindam Mallik, Sushil Sakhare, Bharani Chava, Yasser Sherazi, Philippe Leray, Abdelkarim Mercha, Jürgen Bömmels, Gregory McIntyre, Kurt Ronse, Aaron Thean, Zsolt Tökei, An Steegen, Pieter Schuddinck, Huynh Bao Trong

Proceedings Volume 9427, 94270C (2015) https://doi.org/10.1117/12.2178997

KEYWORDS: Optical lithography, Metals, Transistors, Standards development, Logic, Resistance, Lithography, Extreme ultraviolet, Extreme ultraviolet lithography, Field effect transistors

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Proceedings Article | 17 April 2014 Paper

The economic impact of EUV lithography on critical process modules

Arindam Mallik, Naoto Horiguchi, Jürgen Bömmels, Aaron Thean, Kathy Barla, Geert Vandenberghe, Kurt Ronse, Julien Ryckaert, Abdelkarim Mercha, Diederik Verkest, Laith Altimime, An Steegen

Proceedings Volume 9048, 90481R (2014) https://doi.org/10.1117/12.2046310

KEYWORDS: Extreme ultraviolet lithography, Optical lithography, Lithography, Extreme ultraviolet, Semiconducting wafers, Semiconductors, Photomasks, Back end of line, Metals, Front end of line

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Proceedings Article | 8 April 2013 Paper

The need for EUV lithography at advanced technology for sustainable wafer cost

Arindam Mallik, Steven Demuynck, Abdelkarim Mercha, Naoto Horiguchi, Wim Vansumere, Jürgen Bömmels, Tokei Zsolt, Aaron Thean, Kurt Ronse, Diederik Verkest, Hans Lebon, An Steegen, Julien Ryckaert, Geert Vandenberghe

Proceedings Volume 8679, 86792Y (2013) https://doi.org/10.1117/12.2011528

KEYWORDS: Semiconducting wafers, Lithography, Extreme ultraviolet lithography, Extreme ultraviolet, Photomasks, Optical lithography, Semiconductors, Databases, Back end of line, 193nm lithography

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Proceedings Article | 17 April 2012 Paper

Integrated cleaning and handling automation of NXE3100 reticles

Uwe Dietze, Rik Jonckheere, Peter Dress, Tobias Waehler, Oliver Brux, Bart Baudemprez, Kurt Ronse

Proceedings Volume 8352, 83520U (2012) https://doi.org/10.1117/12.923321

KEYWORDS: Reticles, Particles, Scanners, Extreme ultraviolet, Photomasks, Extreme ultraviolet lithography, Contamination, Inspection, Semiconducting wafers, Surface roughness

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Proceedings Article | 14 October 2011 Paper

Additional evidence of EUV blank defects first seen by wafer printing

Doron Meshulach, Dieter Van den Heuvel, Kurt Ronse, John Magana, Eric Hendrickx, Thorsten Hofmann, Israel Aharonson, Rik Jonckheere, Tristan Bret

Proceedings Volume 8166, 81660E (2011) https://doi.org/10.1117/12.901555

KEYWORDS: Printing, Inspection, Reticles, Semiconducting wafers, Extreme ultraviolet, Bismuth, Atomic force microscopy, Photomasks, Wafer inspection, Visualization

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Proceedings Article | 4 April 2011 Paper

Demonstration of lithography patterns using reflective e-beam direct write

Jeff Sun, Mark McCord, Alan Brodie, Paul Petric, Regina Freed, Luc Haspeslagh, Bart Vereecke, Kurt Ronse

Proceedings Volume 7970, 79701T (2011) https://doi.org/10.1117/12.879454

KEYWORDS: Electron beam lithography, Semiconducting wafers, Lithography, Electrodes, Mirrors, Microelectromechanical systems, Etching, Reflectivity, Electron beams, Tin

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Traditionally, e-beam direct write lithography has been too slow for most lithography applications. E-beam direct write lithography has been used for mask writing rather than wafer processing since the maximum blur requirements limit column beam current - which drives e-beam throughput. To print small features and a fine pitch with an e-beam tool requires a sacrifice in processing time unless one significantly increases the total number of beams on a single writing tool. Because of the uncertainty with regards to the optical lithography roadmap beyond the 22 nm technology node, the semiconductor equipment industry is in the process of designing and testing e-beam lithography tools with the potential for high volume wafer processing. For this work, we report on the development and current status of a new maskless, direct write e-beam lithography tool which has the potential for high volume lithography at and below the 22 nm technology node. A Reflective Electron Beam Lithography (REBL) tool is being developed for high throughput electron beam direct write maskless lithography. The system is targeting critical patterning steps at the 22 nm node and beyond at a capital cost equivalent to conventional lithography. Reflective Electron Beam Lithography incorporates a number of novel technologies to generate and expose lithographic patterns with a throughput and footprint comparable to current 193 nm immersion lithography systems. A patented, reflective electron optic or Digital Pattern Generator (DPG) enables the unique approach. The Digital Pattern Generator is a CMOS ASIC chip with an array of small, independently controllable lens elements (lenslets), which act as an array of electron mirrors. In this way, the REBL system is capable of generating the pattern to be written using massively parallel exposure by ~1 million beams at extremely high data rates (~ 1Tbps). A rotary stage concept using a rotating platen carrying multiple wafers optimizes the writing strategy of the DPG to achieve the capability of high throughput for sparse pattern wafer levels. The lens elements on the DPG are fabricated at IMEC (Leuven, Belgium) under IMEC's CMORE program. The CMOS fabricated DPG contains ~ 1,000,000 lens elements, allowing for 1,000,000 individually controllable beamlets. A single lens element consists of 5 electrodes, each of which can be set at controlled voltage levels to either absorb or reflect the electron beam. A system using a linear movable stage and the DPG integrated into the electron optics module was used to expose patterns on device representative wafers. Results of these exposure tests are discussed.

Proceedings Article | 2 April 2011 Paper

Evidence of printing blank-related defects on EUV masks missed by blank inspection

Doron Meshulach, Dieter Van den Heuvel, John Magana, Rik Jonckheere, Kurt Ronse, Thorsten Hofmann, Eric Hendrickx, Tristan Bret, Israel Aharonson

Proceedings Volume 7985, 79850W (2011) https://doi.org/10.1117/12.883854

KEYWORDS: Inspection, Printing, Photomasks, Reticles, Wafer inspection, Semiconducting wafers, Extreme ultraviolet, Visualization, Atomic force microscopy, Defect detection

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Proceedings Article | 29 September 2010 Paper

Natural EUV mask blank defects: evidence, timely detection, analysis and outlook

Shaunee Cheng, Dieter Van den Heuvel, Rik Jonckheere, John Magana, Eric Hendrickx, Tsukasa Abe, Tristan Bret, Kurt Ronse

Proceedings Volume 7823, 78231T (2010) https://doi.org/10.1117/12.865812

KEYWORDS: Reticles, Inspection, Printing, Bismuth, Photomasks, Semiconducting wafers, Defect detection, Wafer inspection, Extreme ultraviolet, Atomic force microscopy

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Proceedings Article | 1 April 2010 Paper

E-beam maskless lithography: prospects and challenges

Kurt Ronse

Proceedings Volume 7637, 76370A (2010) https://doi.org/10.1117/12.852229

KEYWORDS: Lithography, Photomasks, Electron beam lithography, Manufacturing, Beam shaping, Semiconductors, Nanofabrication, Overlay metrology, Optical lithography, 193nm lithography

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Proceedings Article | 11 May 2009 Paper

Investigation of EUV mask defectivity via full-field printing and inspection on wafer

Matt Lamantia, Alan Myers, Dieter Van Den Heuvel, Eric Hendrickx, Anne-Marie Goethals, Rik Jonckheere, Nickolay Stepanenko, Kurt Ronse, Fumio Iwamoto

Proceedings Volume 7379, 73790R (2009) https://doi.org/10.1117/12.824268

KEYWORDS: Reticles, Photomasks, Semiconducting wafers, Printing, Wafer inspection, Inspection, Extreme ultraviolet, Scanning electron microscopy, Atomic force microscopy, Distortion

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Proceedings Article | 4 December 2008 Paper

Full field EUV lithography: lessons learned on EUV ADT imaging, EUV resist, and EUV reticles

F. Van Roey, A. Goethals, E. Hendrickx, B. Baudemprez, G. Lorusso, R. Jonckheere, A. Niroomand, K. Ronse, J. Hermans

Proceedings Volume 7140, 714007 (2008) https://doi.org/10.1117/12.805408

KEYWORDS: Extreme ultraviolet, Reticles, Semiconducting wafers, Extreme ultraviolet lithography, Photomasks, Line edge roughness, Critical dimension metrology, Lithography, Finite element methods, Printing

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Proceedings Article | 28 March 2008 Paper

Dependence of EUV mask printing performance on blank architecture

Fumio Iwamoto, Rik Jonckheere, Anne-Marie Goethals, Bart Baudemprez, Gian Francesco Lorusso, Kurt Ronse, Ivan Pollentier, Jan Hermans, Yoonsuk Hyun

Proceedings Volume 6921, 69211W (2008) https://doi.org/10.1117/12.771967

KEYWORDS: Carbon, Reflectivity, Photomasks, Extreme ultraviolet, Silicon, Ruthenium, Reticles, Printing, Extreme ultraviolet lithography, Oxidation

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Proceedings Article | 21 March 2008 Paper

Performance of the full field EUV systems

Bart Kessels, Emil Smitt-Weaver, Christian Wagner, Noreen Harned, James Ryan, Joerg Mallman, Edwin Boon, Olav Frijns, Michael Tittnich, Peter Kürz, Judy Galloway, Nico Buzing, Kurt Ronse, Hans Meiling, Bill Pierson, Bas Hultermans, John Zimmerman, Mieke Goethals, Andre van Dijk, Martin Lowisch, Sjoerd Lok, Kevin Cummings, Roel de Jonge

Proceedings Volume 6921, 69210L (2008) https://doi.org/10.1117/12.773259

KEYWORDS: Extreme ultraviolet, Tin, Extreme ultraviolet lithography, Semiconducting wafers, Mirrors, Printing, Sensors, Stray light, Cameras, Reticles

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Proceedings Article | 20 March 2008 Paper

EUV pattern shift compensation strategies

T. Klimpel, T. Schmoeller, R. Jonckheere, A. Goethals, G. Lorusso, A. Myers, K. Ronse, I. Kim

Proceedings Volume 6921, 69211B (2008) https://doi.org/10.1117/12.772640

KEYWORDS: Photomasks, Extreme ultraviolet, Semiconducting wafers, Projection systems, Imaging systems, Near field, Extreme ultraviolet lithography, Lithography, Reflectivity, Lithographic illumination

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EUV lithography is one of the hot candidates for the 22nm node. A well known phenomenon in EUV lithography is the impact of non-telecentricity and the mask topography on printing performance. Due to oblique illumination of the mask, layout, the printed features are shifted and biased on the wafer with respect to their target dimension up to several nanometers. This effect is inherent to EUV imaging systems. In order to maintain CDU, overlay and registration requirements, these effects need to be compensated for as part of the lithographic manufacturing process. Conventional compensation techniques, such as OPC compensation, significantly increase the complexity of the litho process. In this paper we discuss pattern shift, which is induced by mask-side non-telecentricity of the EUV ring field system. In particular, we show how the mask position relative to the focal plane of the projection system impacts pattern shift. It is shown that mask focus shift allows for a compensation of pattern shift, independent on angle of incidence, pattern type, pattern pitch, pattern orientation, and slit position. Thus it is seen that placement error is not an effect related to mask topography (not a shadowing effect) but arises purely from the mask non-telecentricity. A geometric interpretation of this effect is given and shown to be consistent with results of rigorous simulations. A method to simulate the shift of the mask focus position is briefly discussed. The mask focus shift for which the pattern shift vanishes in the aerial wafer image at best focus is determined using rigorous simulations. The amount of mask focus shift to compensate for the pattern shift is found to be approximately 136nm. This mask focus shift is then applied to investigate the through focus and dose behavior of the pattern shift in the resist. It is shown that the pattern shift is a function of wafer focus position and that this is a result of the image tilt in EUV systems. While the pattern shift is fully compensated at one wafer focus position, the shift at other positions is very small. The impact of the mask focus position on process window is investigated.

Proceedings Article | 20 March 2008 Paper

Imaging performance of the EUV alpha semo tool at IMEC

R. Jonckheere, S. Lok, A. M. Goethals, F. Van Roey, A. Van Dijk, G. Lorusso, J.-F. de Marneffe, A. Niroomand, I. Kim, K. Ronse, B. S. Kim, A. Myers, D. Goossens, S. Demuynck, B. Baudemprez, J. Hermans

Proceedings Volume 6921, 69210O (2008) https://doi.org/10.1117/12.771983

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Critical dimension metrology, Etching, Photomasks, Manufacturing, Overlay metrology, Printing, Photoresist processing, Scanners

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Proceedings Article | 30 October 2007 Paper

Investigation of mask defectivity in full field EUV lithography

Rik Jonckheere, G. Lorusso, T. Schmoeller, H. Koop, Fumio Iwamoto, K. Ronse, A. Goethals

Proceedings Volume 6730, 673012 (2007) https://doi.org/10.1117/12.746566

KEYWORDS: Photomasks, Opacity, Carbon, Particles, Semiconducting wafers, Extreme ultraviolet lithography, Extreme ultraviolet, Reticles, Waveguides, Printing

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Proceedings Article | 11 May 2007 Paper

Full field EUV lithography turning into a reality at IMEC

Insung Kim, Anne Marie Goethals, Ardavan Niroomand, Rik Jonckheere, Gian Francesco Lorusso, Kurt Ronse, Fumio Iwamoto, Nickolay Stepanenko, Jan Hermans, Alan Myers, Bart Baudemprez

Proceedings Volume 6607, 66070H (2007) https://doi.org/10.1117/12.729259

KEYWORDS: Reticles, Reflectivity, Extreme ultraviolet, Extreme ultraviolet lithography, Photomasks, Silicon, Multilayers, Carbon, Contamination, Point spread functions

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Proceedings Article | 3 May 2007 Paper

Assessment of EUV reticle blank availability enabling the use of EUV tools today and in the future

K. Ronse, R. Jonckheere, R. De Ruyter, A. Goethals, G. Lorusso, J. Hermans

Proceedings Volume 6533, 653313 (2007) https://doi.org/10.1117/12.737179

KEYWORDS: Photomasks, Reticles, Extreme ultraviolet, Reflectivity, Extreme ultraviolet lithography, Silicon, Multilayers, Lithography, Contamination, Manufacturing

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Proceedings Article | 13 March 2007 Paper

EUV lithography with the Alpha Demo Tools: status and challenges

Uwe Mickan, Henk Meijer, Kurt Ronse, Peter Kuerz, Hans Meiling, Michael Tittnich, Martin Lowisch, Noreen Harned, James Ryan, John Zimmerman, Sjoerd Lok, Harm-Jan Voorma, Mieke Goethals, Rogier Groeneveld

Proceedings Volume 6517, 651706 (2007) https://doi.org/10.1117/12.712065

KEYWORDS: Semiconducting wafers, Reticles, Extreme ultraviolet, Extreme ultraviolet lithography, Lithography, Mirrors, Photomasks, Reflectivity, Tin, Reliability

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Proceedings Article | 13 March 2007 Paper

EUV lithography program at IMEC

Nikolay Stepanenko, Anne Marie Goethals, Alan Myers, Bart Baudemprez, Rik Jonckheere, Jan Hermans, Manish Chandhok, Roel Gronheid, Fumio Iwamoto, Gian Francesco Lorusso, Kurt Ronse, Frieda Van Roey, Ardavan Niroomand, Insung Kim

Proceedings Volume 6517, 651709 (2007) https://doi.org/10.1117/12.710798

KEYWORDS: Extreme ultraviolet, Reticles, Extreme ultraviolet lithography, Photomasks, Line edge roughness, Point spread functions, Scanners, Lithography, Printing, Critical dimension metrology

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Proceedings Article | 16 June 2005 Paper

Progress in 193nm immersion lithography at IMEC

Y. Aksenov, K. Ronse, E. Hendrickx, L. Leunissen, G. Vandenberghe

Proceedings Volume 5835, (2005) https://doi.org/10.1117/12.637271

KEYWORDS: Photomasks, Immersion lithography, Polarization, Atrial fibrillation, Lithography, Critical dimension metrology, Reticles, Semiconducting wafers, Diffraction, 193nm lithography

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Proceedings Article | 4 May 2005 Paper

32nm node technology development using interference immersion lithography

Kurt Ronse, Diane McCafferty, Louis Markoya, Jan Hermans, Harry Sewell, Eric Hendrickx

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.601012

KEYWORDS: Refractive index, Immersion lithography, Lithography, Polarization, Water, Image resolution, Imaging systems, Printing, Glasses, Absorption

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Proceedings Article | 20 August 2004 Paper

Through-pitch low-k₁ contact hole imaging with CPL technology

Stephen Hsu, Douglas Van Den Broeke, Kurt Ronse, Geert Vandenberghe, Vincent Wiaux, J. Fung Chen, Robert Socha, Joost Bekaert

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557803

KEYWORDS: Reticles, Resolution enhancement technologies, Printing, Lithography, Immersion lithography, Chromium, Electroluminescence, Semiconducting wafers, Photomasks, Critical dimension metrology

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Proceedings Article | 28 May 2004 Paper

Experimental investigation of fabrication process-, transportation-, storage, and handling-induced contamination of 157nm reticles and vacuum-UV cleaning

Thierry Conard, Young-Seog Kang, Guy Vereecke, Rik Jonckheere, Michael Kocsis, Astrid Eliat, Uzodinma Okoroanyanwu, Nickolay Stepanenko, Kurt Ronse

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.536453

KEYWORDS: Reticles, Contamination, Photomasks, Vacuum ultraviolet, Oxygen, Semiconducting wafers, Adsorption, Ions, Scanners, Binary data

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Mask fabrication process, transportation, storage, and handling contribute to contamination of 157nm reticles and modified fused silica substrates, resulting in transmission loss. A stable VUV cleaning procedure for contaminated binary, alternating, and attenuated phase shift reticles has been developed. This cleaning procedure was verified by lithographic imaging on the 157nm ASML MS-VII exposure scanner. A point-to-point steady state dose transmission uniformity range across a batch of 25 wafers (the exposure conditions of which were equivalent to that of a 300 mm wafer, 26mm×33mm fields, 50mJ/cm²) that were exposed with a modified fused silica substrate, was found to be <0.24% for a reticle that was cleaned prior to exposure using this VUV cleaning process. In-situ laser cleaning of contaminated mask substrates during exposure in the MS-VII resulted in 1% change in transmission at doses of up to 20 J/cm², above which transmission remains stable (<0.24% variation). The cleaning procedure involves exposing the contaminated reticle in the UVO Reticle Cleaning Station for 30 minutes, using a cleaning gas mixture of N₂/O₂=99%/1%. Transmission loss due to contamination within the clean room is limited to 1 - 2 % and is reversible upon VUV cleaning. Flare levels of 3% were measured on contaminated reticle relative to a clean state of the same reticle. VUV cleaning is not only good for improving and maintaining stable mask transmission, but it is also good for preventing reticle contamination-induced flare. Contamination rate and contaminant type appear to be dependent on the storage environment of mask substrates and reticles. Typical contaminants included molecular acids (halogens, sulfur, sulfates), molecular bases (ammonia, amines), molecular condensables (hydrocarbons, alcohols, ketones, fatty acids, siloxanes, phthalate), molecular dopant (boron) and molecular metals (Ca, Mg, Al, Cu). Contamination of mask substrates appears to be through a competitive adsorption phenomenon, whereby low molecular weight species with high vapor pressure and low adsorption energies are over time replaced by large molecular weight ones with low vapor pressure and high adsorption energies.

Proceedings Article | 28 May 2004 Paper

Contamination monitoring and control on ASML MS-VII 157-nm exposure tool

Jan Hermans, Jan Coenen, Kurt Ronse, Roel Gronheid, Uzodinma Okoroanyanwu

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.536440

KEYWORDS: Oxygen, Contamination, Sensors, Projection systems, Relays, Semiconducting wafers, Spectroscopy, Nitrogen, Contamination control, Carbon monoxide

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This paper presents results of monitoring and control of contaminants in an ASML MS-VII 157nm full-field exposure tool at IMEC, as verified lithographically in terms of field uniformity, lens transmission, CD uniformity, and scattered light. The daily contamination monitoring system utilizes in-line photo-ionization detector, oxygen and moisture analyzers, as well as chemiluminescent detector, and gas chromatograph that is coupled to a mass spectrometer. On a monthly basis, contamination monitoring was performed with thermal desorption-gas chromatographi/mass spectrometric techniques. The following four locations within the optical path of the MS-VII are monitored: source optic assembly, condenser lens optic, 1X relay station, and projection optics box. Contamination control is realized in the system with an on-board purge control unit, which is equipped with gas purifiers that remove contaminants such as H₂O, O₂, CO, CO₂, hydrocarbons, H₂, and sulfur compounds. All the observed contaminants have been trending within expected values and no contamination-related tool performance degradation has been observed. The excursions observed in the contaminant concentrations are coincident with tool downtime/maintenance events. Siloxane levels appear to be consistently below 50 ppt in all the monitored locations within the optical path of the tool, except on one occasion when it reached 90 ppt in the projection optics. Volatile organic compounds (VOCs) concentration within the MS-VII enclosure show a stable background level of around 10-25 ppb during weekends and levels of 45-60 ppb (during working days). VOCs concentration variations inside the MS-VII enclosure during the working days correlate well with activities inside the clean room. Air recirculation and low intake of fresh air inside the MS-VII tend to slow down the speed with which the VOCs levels decreases to stable background level, whenever there was a major upward excursion in their concentration. Average light intensity through the projection optics correlates well with oxygen concentration. The average light intensity transmission through the PO lens has shown a steady increase over time due to in-situ laser cleaning with oxygen.

Proceedings Article | 28 May 2004 Paper

Optical path and image performance monitoring of a full-field 157-nm scanner

Uzodinma Okoroanyanwu, Greg Wells, Robert Watso, Robert Morton, Michael Kocsis, Jan Hermans, Young-Seog Kang, Peter De Bisschop, Kurt Ronse, Nickolay Stepanenko

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537328

KEYWORDS: Scanners, Sensors, Modulation transfer functions, Semiconducting wafers, Lithography, Reticles, Spatial frequencies, Monochromatic aberrations, Organic materials, Control systems

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Proceedings Article | 26 June 2003 Paper

Status of 157-nm lithography development at IMEC

Kurt Ronse, Dieter Van Den Heuvel, Frieda Van Roey, Johan Wouters, Rik Jonckheere, Timothy O'Neil, Jean-Francois de Marneffe, Harry Sewell, Jan Hermans, Bruce Tirri, Anne-Marie Goethals, Astrid Eliat, Peter De Bisschop, Stephan Beckx

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485513

KEYWORDS: Pellicles, Etching, Lithography, Reticles, Photomasks, Semiconducting wafers, Optical lithography, Silicon carbide, Contamination, Oxides

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Proceedings Article | 26 June 2003 Paper

ArF solutions for low-k₁ back-end imaging

Kurt Ronse, Geert Vandenberghe, Lloyd Litt, Jo Finders, Kevin Lucas, Robert Socha, Will Conley, Patrick Montgomery, Douglas Van Den Broeke, Philippe Monnoyer, Vincent Wiaux

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485502

KEYWORDS: Electroluminescence, Printing, Resolution enhancement technologies, Photomasks, Lithography, Reticles, Optical lithography, Phase shifts, Lithographic illumination, Metrology

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The requirements stated in the ITRS roadmap for back-end-of-line imaging of current and future technology nodes are very aggressive. Therefore, it is likely that high NA in combination with enhancement techniques will be necessary for the imaging of contacts and trenches, pushing optical lithography into the low-k₁ regime. In this paper, we focus more specifically on imaging solutions for contact holes beyond the 90 nm node using high NA ArF lithography, as this is currently seen as one of the major challenges in optical lithography. We investigate the performance of various existing enhancement techniques in order to provide contact holes imaging solutions in a k₁ range from 0.35 to 0.45, using the ASML PAS5500/1100 0.75NA ArF scanner installed at IMEC. For various resolution enhancement techniques (RET), the proof of concept has been demonstrated in literature. In this paper, we propose an experimental one-to-one comparison of these RET’s with fixed CD target, exposure tool, lithographic process, and metrology. A single exposure through pitch (dense through isolated) printing solution is preferred and is the largest challenge. The common approach using a 6% attenuated phase-shifted mask (attPSM) with a conventional illumination fails. The advantages and drawbacks of other techniques are discussed. High transmission (17%) attenuated phase shift, potentially beneficial for part of the pitch range, requires conflicting trade-offs when looking for a single exposure through pitch solution. More promising results are obtained combining a BIM or a 6% attPSM with assist slots and off-axis illumination, yielding a depth of focus (DOF) at 8% exposure latitude (EL) greater than 0.31 μm from 200 nm pitch through isolated. Chromeless phase lithography (CPL) is also discussed with promising results obtained at the densest pitch. At a 0.4 k₁, an experimental extrapolation to 0.85NA demonstrates that a pitch of 180 nm can be resolved with 0.4 μm DOF at 8% EL. For all of these imaging solutions, various metrics are studied to compare printing performance. In addition to process latitude, we consider forbidden pitches, sidelobes printability, and mask error enhancement factor (MEEF).

Proceedings Article | 26 June 2003 Paper

Extending ArF to the 65-nm node with full-phase lithography

Christophe Pierrat, Geert Vandenberghe, Hua-Yu Liu, Paul van Adrichem, Kurt Ronse, Frank Driessen

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485426

KEYWORDS: Photomasks, Lithography, Binary data, Optical lithography, Optical proximity correction, Logic, Scanning electron microscopy, Printing, Chromium, Diffraction

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Proceedings Article | 27 December 2002 Paper

Analysis of the impact of reticle CD variations on the available process windows for a 100-nm CMOS process

Kurt Ronse, Geert Vandenberghe, Staf Verhaegen, Rik Jonckheere

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467915

KEYWORDS: Reticles, Critical dimension metrology, Semiconducting wafers, Electroluminescence, Photomasks, Optical proximity correction, 3D metrology, Cadmium, Resolution enhancement technologies, Photoresist processing

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Proceedings Article | 27 December 2002 Paper

Pattern displacement induced by lens aberrations

Albert Colina, Jo Finders, Geert Vandenberghe, Kurt Ronse, Eric Hendrickx, Alex van der Hoff, Mircea Dusa

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467912

KEYWORDS: Scanners, Data modeling, Diffraction, Monochromatic aberrations, Semiconducting wafers, Lithography, Lithographic illumination, Metrology, Overlay metrology, Scanning electron microscopy

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Proceedings Article | 16 August 2002 Paper

OPC aware mask and wafer metrology

Rik Jonckheere, Vincent Wiaux, Thomas Hoffmann, William Howard, Wilhelm Maurer, Jonathan England, Vicky Philipsen, Kurt Ronse, Staf Verhaegen

Proceedings Volume 4764, (2002) https://doi.org/10.1117/12.479350

KEYWORDS: Optical proximity correction, Photomasks, Lithography, Metrology, Image processing, Scanning electron microscopy, Semiconducting wafers, Image analysis, Transistors, Line edge roughness

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Proceedings Article | 30 July 2002 Paper

Assessment of OPC effectiveness using two-dimensional metrics

Staf Verhaegen, Thomas Hoffmann, William Howard, Vincent Wiaux, Kurt Ronse, Geert Vandenberghe, Wilhelm Maurer, Rik Jonckheere, Moshe Preil, Vicky Philipsen

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474588

KEYWORDS: Reticles, Optical proximity correction, Photomasks, Scanning electron microscopy, Semiconducting wafers, Critical dimension metrology, Optical lithography, Metrology, Printing, Logic

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A complete evaluation of the optical proximity effects (OPE) and of their corrections (OPC) requires a quantitative description of two-dimensional (2D) parameters, both at resist- and at reticle-level. Because the 2D behaviour at line-ends and at line-corners can become a limiting factor for the yield, it should be taken into account when characterising a process, just as the CD- and pitch-linearity are already kept under control. This implies the measurement of 2D-metrics in a precise way. We used an SEM Image Analysis tool (ProDATA SIAM) to define and measure various OPC-relevant metrics for a C013 process. For the METAL (M1) process, we show that the overlap between line-ends of M1-trenches and underlying nominal contacts is a relevant metric to describe the effectiveness of hammerheads. Moreover, it is an interesting metric to combine with the CD process window. For the GATE process, we demonstrate that for a given set of metrics there is a degree of OPC aggressiveness beyond which it is not worth to go. We considered both line-end shortening (LES) and corner rounding affecting the poly linewidth close to a contact pad, and this on various logic circuits having received different degrees of fragmentation. Finally the knowledge of the actual line-end contour on the reticle allows one to simulate separately the printing effect of that area loss at reticle line-ends. The area loss measured by comparing the extracted contour to the target one is regarded as a combination of pull-back and area loss at corners. For our C013 gate process, and for the 130nm lines at a 1:1.25 duty cycle, those two parameters contribute together to approximetely 40% of the measured LES in the resist. This fact raises the question of specifications on 2D reticle parameters. We also find a linear correlation between the area loss at reticle line-end corners and the corresponding increase of LES on the wafer, which suggests a way towards putting specifications on the reticle line-ends.

Proceedings Article | 30 July 2002 Paper

AttPSM CD control: mask bias and flare effects

Young-Chang Kim, Kurt Ronse, Geert Vandenberghe

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474482

KEYWORDS: Photomasks, Nanoimprint lithography, Semiconducting wafers, Neodymium, Critical dimension metrology, Diffraction, Error analysis, Process control, Binary data, Optical lithography

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Proceedings Article | 30 July 2002 Paper

Model-based corrections for complementary phase-shift mask toward 70-nm technology node

Geert Vandenberghe, Monique Ercken, Hua-Yu Liu, Paul van Adrichem, Frank Driessen, Jason Li, Linard Karklin, Patrick Montgomery, Kurt Ronse

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.490520

KEYWORDS: Model-based design

Proceedings Article | 11 March 2002 Paper

Performance optimization of the double-exposure alternating PSM for (sub-)100-nm ICs

Paul Vanadrichem, Jason Li, Linard Karklin, Geert Vandenberghe, Frank Driessen, Kurt Ronse

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458316

KEYWORDS: Photomasks, Optical proximity correction, Binary data, Reticles, Semiconducting wafers, Optical lithography, Logic, Resolution enhancement technologies, Scanning electron microscopy, Etching

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Proceedings Article | 11 March 2002 Paper

Challenge for sub-100-nm DRAM gate printing using ArF lithography with combination of moderate OAI and attPSM

Kurt Ronse, Geert Vandenberghe, Young-Chang Kim, Staf Verhaegen

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458259

KEYWORDS: Photomasks, Critical dimension metrology, Semiconducting wafers, Monte Carlo methods, Nanoimprint lithography, Printing, Lithography, Resolution enhancement technologies, Binary data, Error analysis

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Proceedings Article | 14 September 2001 Paper

ArF lithography options for 100-nm technologies

Geert Vandenberghe, Christie Delvaux, Monique Ercken, Kurt Ronse, Bert Vleeming, Young-Chang Kim, Sang-Jun Choi, Kevin Lucas

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435718

KEYWORDS: Binary data, Photomasks, Diffraction, Optical proximity correction, Electroluminescence, Lithographic illumination, Optical lithography, Scanning electron microscopy, Printing, Lithography

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Proceedings Article | 14 September 2001 Paper

CD control for two-dimensional features in future technology nodes

Staf Verhaegen, Martin McCallum, Ronald Gordon, Rik Jonckheere, Kurt Ronse

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435736

KEYWORDS: Critical dimension metrology, Reticles, Monte Carlo methods, Diffraction, Lithography, Photomasks, Computer simulations, Optical proximity correction, Sodium, Optical lithography

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Proceedings Article | 5 September 2001 Paper

(Sub-) 100-nm gate patterning using 248-nm alternating PSM

Patrick Jaenen, Olivier Toublan, Rik Jonckheere, Geert Vandenberghe, Kurt Ronse

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438406

KEYWORDS: Photomasks, Phase shifts, Reticles, Semiconducting wafers, Etching, Binary data, Optical lithography, Cadmium sulfide, Lithography, Overlay metrology

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Proceedings Article | 5 September 2001 Paper

Reticle quality needs for advanced 193-nm lithography

Geert Vandenberghe, Kurt Ronse, Vincent Wiaux, Rik Jonckheere, Staf Verhaegen

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438345

KEYWORDS: Photomasks, Optical proximity correction, Reticles, Semiconducting wafers, Printing, 193nm lithography, Critical dimension metrology, Metrology, Lithography, Optical lithography

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Proceedings Article | 26 April 2001 Paper

Front-end-of-line process development using 193-nm lithography

Patrick Jaenen, Monique Ercken, Kurt Ronse, Ivan Pollentier, Christie Delvaux, Astrid Eliat

Proceedings Volume 4404, (2001) https://doi.org/10.1117/12.425235

KEYWORDS: Etching, Line edge roughness, 193nm lithography, Critical dimension metrology, Scanning electron microscopy, Lithography, Semiconducting wafers, Head-mounted displays, Monochromatic aberrations, Manufacturing

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Proceedings Article | 26 April 2001 Paper

Lithography aspects of dual-damascene interconnect technology

Herbert Struyf, Muriel Lepage, Kurt Ronse, Diziana Van Goidsenhoven, Ivan Pollentier, Mireille Maenhoudt, Marleen Van Hove

Proceedings Volume 4404, (2001) https://doi.org/10.1117/12.425203

KEYWORDS: Etching, Photomasks, Oxides, Dielectrics, Reflectivity, Lithography, Critical dimension metrology, Copper, Electroluminescence, Metals

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Proceedings Article | 5 July 2000 Paper

Status of ArF lithography for the 130-nm technology node

Kurt Ronse, Anne-Marie Goethals, Frieda Van Roey, Guy Davies, Barbra Heskamp, Ardavan Niroomand, Mireille Maenhoudt, Christie Delvaux, Patrick Jaenen, Bert Vleeming, Diziana Vangoidsenhoven, Jo Finders, Ivan Pollentier, Ingrid Pollers, Geert Vandenberghe, Koen van Ingen Schenau

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389029

KEYWORDS: Lithography, 193nm lithography, Photomasks, Manufacturing, Etching, Reticles, Dry etching, Lenses, Oxides, Resolution enhancement technologies

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Proceedings Article | 5 July 2000 Paper

KrF lithography for 130 nm

Robert Socha, Mircea Dusa, Peter Vanoppen, Jo Finders, Jan van Schoot, Geert Vandenberghe, Kurt Ronse

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389002

KEYWORDS: Lithography, Reticles, Lithographic illumination, Scattering, Photomasks, Critical dimension metrology, Optical proximity correction, Binary data, Diffraction, Manufacturing

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Proceedings Article | 5 July 2000 Paper

Limits of optical lithography

Edward Muzio, Kurt Ronse, Peter Zandbergen, Staf Verhaegen, Mireille Maenhoudt

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389027

KEYWORDS: Critical dimension metrology, Photomasks, Reticles, Resolution enhancement technologies, 193nm lithography, Monte Carlo methods, Binary data, Lithographic illumination, Optical lithography, Lithography

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Proceedings Article | 26 July 1999 Paper

Variable-threshold resist models for lithography simulation

Kurt Ronse, Thomas Marschner, Anne-Marie Goethals, John Randall, Monique Ercken

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354329

KEYWORDS: Data modeling, Lithography, Photoresist processing, Semiconducting wafers, Mathematical modeling, Wafer-level optics, Reticles, Data conversion, Image processing, Cadmium sulfide

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Lithography simulation tools eliminate costly and time consuming experiments allowing new processes to be developed quickly. There are excellent simulation programs that allow sophisticated modeling of the optics in current and future lithography tools. In many instances, the weak point in lithography simulations is the relatively poor capability to model resists. Sophisticated and accurate models have been developed for many technologically important i-line resists. However the models for 248nm chemically amplified resist are not as mature, and there are many resist of interest for which there are no reliable models. Even when they do exist, these full resist models are computationally expensive and not suitable for some applications such as model based optical proximity corrections. When useful models do not exist, lithographers use the aerial imaging portions of the lithography simulation tools and apply the simplest of resist models, the so-called constant threshold model. While this allows the critical dimensions to be approximated for high contrast resist, it fails to capture important aspects of most resist processes. Empirically trained resists models have come to be used where more accurate lithography simulations are required, but full resist models either do not exist or are to slow to be useful. This paper explores the use of a class of empirically trained models known as variable threshold resist models. This type of model stats with an aerial image calculation and uses a function to locally vary the threshold used to predict CDs. This type of model may be quickly trained for a specific resist process and potentially applied for a wide range of numerical aperture and partial coherence settings. We show how multiple dose and focus data can be used to train a model that includes input parameters extracted from the aerial image as well as pattern factors and exposure dose. The data present suggests that models trained with one set of optical conditions are useful at other optical settings. We also explore different approaches to validate the models and demonstrate some consider the effect of across wafer variation on the training data.

Proceedings Article | 26 July 1999 Paper

Application of a new approach to optical proximity correction

Hartmut Kirsch, Olivier Toublan, Patrick Schiavone, Wolfram Ziegler, Rainer Zimmermann, Kurt Ronse, John Watson, Michal Simecek, Anja Rosenbusch, Frederic Lalanne, Tom Vermeulen, Carmelo Romeo, Andrew Hourd, Wilhelm Maurer, Casper Juffermans

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354378

KEYWORDS: Optical proximity correction, Etching, Semiconducting wafers, Inspection, Deep ultraviolet, Reticles, Critical dimension metrology, Manufacturing, Mathematical modeling, Mask making

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Proceedings Article | 26 July 1999 Paper

193-nm lithography on a full-field scanner

Barbra Heskamp, Kurt Ronse, Ingrid Pollers, Anne-Marie Goethals, Frieda Van Roey, Guy Davies, Patrick Jaenen

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354340

KEYWORDS: Etching, Photoresist processing, Lithography, Scanners, Line edge roughness, Resistance, Scanning electron microscopy, Deep ultraviolet, Chemistry, Contamination

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Proceedings Article | 26 July 1999 Paper

CD control comparison for sub-0.18-um patterning using 248-nm lithography and strong resolution enhancement techniques

Geert Vandenberghe, Kurt Ronse, Mircea Dusa, Robert Socha, Thomas Marschner

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354336

KEYWORDS: Photomasks, Binary data, Optical proximity correction, Resolution enhancement technologies, Phase shifts, Semiconducting wafers, Reticles, SRAF, Lithography, Optical lithography

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Proceedings Article | 26 July 1999 Paper

Feasibility of printing 0.1-um technology with optical lithography

Donis Flagello, Kurt Ronse, Bernd Geh, Mireille Maenhoudt, Staf Verhaegen, Winfried Kaiser

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354347

KEYWORDS: Critical dimension metrology, Reticles, Electroluminescence, Printing, Lithography, Lithographic illumination, Photomasks, 193nm lithography, Binary data, Resolution enhancement technologies

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Proceedings Article | 26 July 1999 Paper

Intrawafer CD control in state-of-the-art lithography

Grozdan Grozev, Christiaan Baert, Thomas Marschner, Mario Reybrouck, Ivan Pollentier, Kurt Ronse

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354406

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Standards development, Lithography, Chemistry, Metrology, Etching, Photoresist developing, Deep ultraviolet, Photoresist processing

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Proceedings Article | 14 June 1999 Paper

Role of LV-SEM reticle CD measurements on DUV lithography

Thomas Marschner, Kurt Ronse, Marco Polli, Goedele Potoms, Ivan Pollentier, Rik Jonckheere

Proceedings Volume 3677, (1999) https://doi.org/10.1117/12.350870

KEYWORDS: Reticles, Semiconducting wafers, Critical dimension metrology, Scanning electron microscopy, Photomasks, Optical testing, Lithography, Etching, Algorithm development, Deep ultraviolet

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Proceedings Article | 28 April 1999 Paper

Recent trends and progress in deep-UV lithography

Kurt Ronse, Geert Vandenberghe, Anne-Marie Goethals, Mireille Maenhoudt

Proceedings Volume 3741, (1999) https://doi.org/10.1117/12.346897

KEYWORDS: 193nm lithography, Lithography, Photomasks, Reticles, Manufacturing, Optical lithography, Resolution enhancement technologies, Deep ultraviolet, Phase shifts, Lenses

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Proceedings Article | 18 December 1998 Paper

Some challenges for mask making to keep up with the roadmap

Thomas Marschner, John Randall, Kurt Ronse, Rik Jonckheere

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332839

KEYWORDS: Photomasks, Critical dimension metrology, Semiconducting wafers, Reticles, Optical proximity correction, Mask making, Lithography, Image processing, Scanning electron microscopy, Scanners

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Proceedings Article | 18 December 1998 Paper

New approach to optical proximity correction

Andrew Hourd, Rainer Zimmermann, Casper Juffermans, Kurt Ronse, Wolfram Ziegler, Frederic Lalanne, Carmelo Romeo, Michal Simecek, Olivier Toublan, Wilhelm Maurer, John Watson, Anja Rosenbusch, Patrick Schiavone, Hartmut Kirsch

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332856

KEYWORDS: Optical proximity correction, Reticles, Photomasks, Inspection, Data modeling, Manufacturing, Deep ultraviolet, Logic, Semiconducting wafers, Etching

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Proceedings Article | 29 June 1998 Paper

CD control comparison of step-and-repeat versus step-and-scan DUV lithography for sub-0.25-um gate printing

Luc Van den hove, Thomas Marschner, Jo Finders, Kurt Ronse, Paul Luehrmann, Mireille Maenhoudt, Anna Maria Minvielle, Jan van Schoot, Bob Streefkerk

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310789

KEYWORDS: Critical dimension metrology, Scanners, Reticles, Semiconducting wafers, Control systems, Lithography, Deep ultraviolet, Scanning electron microscopy, Manufacturing, Ions

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Proceedings Article | 29 June 1998 Paper

Reduction of mask-induced CD errors by optical proximity correction

John Randall, Alexander Tritchkov, Rik Jonckheere, Patrick Jaenen, Kurt Ronse

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310737

KEYWORDS: Photomasks, Critical dimension metrology, Optical proximity correction, Semiconducting wafers, Reticles, Printing, Lithography, Imaging systems, Optical components, Nonlinear optics

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Proceedings Article | 29 June 1998 Paper

Bottom-ARC optimization methodology for 0.25-um lithography and beyond

Patrick Jaenen, Feng-Hong Zhang, Paul Richardson, Christie Delvaux, Maaike Op de Beeck, James Lamb, Ilse van Puyenbroeck, Kurt Ronse, Geert Vandenberghe, Johan van der Hilst, Johannes van Wingerden

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310762

KEYWORDS: Critical dimension metrology, Etching, Reflectivity, Semiconducting wafers, Chlorine, Ions, Lithography, Photoresist processing, Absorption, Information operations

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Proceedings Article | 28 July 1997 Paper

Automated OPC for application in advanced lithography

Luc Van den Hove, Kouros Ghandehari, Rik Jonckheere, John Randall, Alexander Tritchkov, Kurt Ronse

Proceedings Volume 3096, (1997) https://doi.org/10.1117/12.277300

KEYWORDS: Optical proximity correction, Lithography, Photomasks, Optical lithography, Reticles, Deep ultraviolet, Printing, Mask making, Data modeling, Optics manufacturing

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Proceedings Article | 7 July 1997 Paper

Optical proximity effects correction at 0.25 um incorporating process variations in lithography

Alexander Tritchkov, John Stirniman, Michael Rieger, Kurt Ronse, Geert Vandenberghe, Anthony Yen, Luc Van den Hove

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.275990

KEYWORDS: Lithography, Optical proximity correction, Optical calibration, Deep ultraviolet, Printing

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Proceedings Article | 7 July 1997 Paper

NA/sigma optimization strategies for an advanced DUV stepper applied to 0.25- and sub-0.25-um critical levels

Geert Vandenberghe, Daniel Baker, Peter De Bisschop, Kurt Ronse, Jo Finders, Kouros Ghandehari, John Lilygren, Maaike Op de Beeck, Luc Van den Hove, Harry Botermans, Mireille Maenhoudt, Patrick Jaenen

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.275973

KEYWORDS: Deep ultraviolet, Logic, Photoresist processing, Dry etching, Etching

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Proceedings Article | 7 June 1996 Paper

Optical proximity effects and correction strategies for chemical-amplified DUV resists

Alexander Tritchkov, Luc Van den Hove, Rik Jonckheere, Veerle Van Driessche, Bert Bruggeman, Maaike Op de Beeck, Harry Botermans, Anthony Yen, Kurt Ronse

Proceedings Volume 2726, (1996) https://doi.org/10.1117/12.240927

KEYWORDS: Etching, Optical proximity correction, Photomasks, Critical dimension metrology, Chlorine, Scanning electron microscopy, Deep ultraviolet, Silicon, Lithium, Photoresist processing

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Proceedings Article | 7 June 1996 Paper

Characterization and optimization of CD control for 0.25-um CMOS applications

Keeho Kim, Maaike Op de Beeck, Kurt Ronse, Anthony Yen, Luc Van den Hove

Proceedings Volume 2726, (1996) https://doi.org/10.1117/12.240924

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Reticles, Lithography, Software development, Optical lithography, Scanning electron microscopy, Photoresist processing, Deep ultraviolet, Control systems

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Proceedings Article | 7 June 1996 Paper

Top-surface imaging and optical proximity correction: a way to 0.18-um lithography at 248 nm

J. Vertommen, Alexander Tritchkov, Kurt Ronse, Rik Jonckheere, Frieda Van Roey, Anthony Yen, Luc Van den Hove, Anne-Marie Goethals

Proceedings Volume 2726, (1996) https://doi.org/10.1117/12.240910

KEYWORDS: Optical proximity correction, Anisotropy, Lithography, Photoresist processing, Deep ultraviolet, Image processing, Reticles, Etching, Chemistry, Critical dimension metrology

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Proceedings Article | 26 May 1995 Paper

Feature biasing versus feature-assisted lithography: a comparison of proximity correction methods for 0.5*(lambda/NA) lithography

Anthony Yen, Oberdan Otto, Gene Fuller, Rainer Pforr, Shane Palmer, Luc Van den Hove, Kurt Ronse

Proceedings Volume 2440, (1995) https://doi.org/10.1117/12.209249

KEYWORDS: Optical proximity correction, Photomasks, Lithography, Critical dimension metrology, Electroluminescence, Phase shifts, Binary data, Cadmium, Lithographic illumination, Transparency

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Proceedings Article | 17 May 1994 Paper

Improvement of the focus exposure latitude using optimized illumination and mask design

Peter van Oorschot, Rik Jonckheere, Patrick Jaenen, Kurt Ronse, Luc Van den Hove, Paul Luehrmann, Rainer Pforr

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175467

KEYWORDS: Photomasks, Aluminum, Phase shifts, Halftones, Lithographic illumination, Lithography, Electroluminescence, Logic, Semiconducting wafers, Chromium

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Proceedings Article | 17 May 1994 Paper

Optimization of the optical phase shift in attenuated phase-shifting masks and application to quarter-micrometer deep-UV lithography for logics

Kurt Ronse, Rik Jonckheere, Rainer Pforr, Luc Van den Hove, Ki-Ho Baik

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175476

KEYWORDS: Phase shifts, Photomasks, Lithography, Manufacturing, Transmittance, Deep ultraviolet, Phase measurement, Tolerancing, Optics manufacturing, Refractive index

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Proceedings Article | 16 May 1994 Paper

Proximity effects in dry developed lithography for sub-0.35 um application

Anne-Marie Goethals, Kurt Ronse, Ki-Ho Baik, J. Vertommen, Luc Van den Hove

Proceedings Volume 2195, (1994) https://doi.org/10.1117/12.175355

KEYWORDS: Photoresist processing, Etching, Deep ultraviolet, Anisotropy, Silicon, Image processing, Picture Archiving and Communication System, Lithography, Photomasks, Printing

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Proceedings Article | 15 September 1993 Paper

New simplified positive-tone DESIRE process using liquid phase silylation in DUV lithography

Kurt Ronse, Luc Van den Hove, Ki-Ho Baik, Bruno Roland

Proceedings Volume 1925, (1993) https://doi.org/10.1117/12.154765

KEYWORDS: Deep ultraviolet, Photomasks, Liquids, Silicon, Lithography, Photoresist processing, Phase shifting, Scanning electron microscopy, Image processing, Diffusion

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Proceedings Article | 8 August 1993 Paper

Comparison of various phase-shift strategies and application to 0.35-um ASIC designs

Luc Van den Hove, Rik Jonckheere, Kurt Ronse, Casper Juffermans

Proceedings Volume 1927, (1993) https://doi.org/10.1117/12.150416

KEYWORDS: Photomasks, Halftones, Phase shifts, Phase shifting, Optical lithography, Semiconducting wafers, Transmittance, Mask making, Photoresist processing, Printing

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Proceedings Article | 8 August 1993 Paper

New resolution-enhancing mask for projection lithography based on in-situ off-axis illumination

Patrick Jaenen, Rik Jonckheere, Ki-Ho Baik, Wolfgang Henke, Rainer Pforr, Luc Van den Hove, Kurt Ronse

Proceedings Volume 1927, (1993) https://doi.org/10.1117/12.150424

KEYWORDS: Photomasks, Diffraction gratings, Optical lithography, Light sources, Diffraction, Glasses, Semiconducting wafers, Computer generated holography, Lithographic illumination, Phase shifts

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Proceedings Article | 1 June 1992 Paper

Liquid phase silylation for the DESIRE process

Bruno Roland, Ki-Ho Baik, Kurt Ronse, Luc Van den Hove

Proceedings Volume 1672, (1992) https://doi.org/10.1117/12.59736

KEYWORDS: Liquids, Photomasks, Phase shifting, Silicon, Scanning electron microscopy, Diffusion, Image processing, Photoresist processing, Lithography, Head-mounted displays

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Showing 5 of 91 publications

Proceedings Volume Editor (7)

SPIE Conference Volume | 30 November 2023

International Conference on Extreme Ultraviolet Lithography 2023

SPIE Conference Volume | 9 December 2022

International Conference on Extreme Ultraviolet Lithography 2022

SPIE Conference Volume | 22 October 2021

International Conference on Extreme Ultraviolet Lithography 2021

SPIE Conference Volume | 20 October 2020

Extreme Ultraviolet Lithography 2020

SPIE Conference Volume | 15 November 2019

International Conference on Extreme Ultraviolet Lithography 2019

Showing 5 of 7 publications

Conference Committee Involvement (25)

International Conference on Extreme Ultraviolet Lithography 2024

29 September 2024 | Monterey, California, United States

International Conference on Extreme Ultraviolet Lithography 2023

2 October 2023 | Monterey, California, United States

Optical and EUV Nanolithography XXXVI

27 February 2023 | San Jose, California, United States

International Conference on Extreme Ultraviolet Lithography 2022

26 September 2022 | Monterey, California, United States

Optical and EUV Nanolithography XXXV

25 April 2022 | San Jose, California, United States

International Conference on Extreme Ultraviolet Lithography 2021

27 September 2021 | Online Only, United States

Extreme Ultraviolet (EUV) Lithography XII

22 February 2021 | Online Only, California, United States

International Conference on Extreme Ultraviolet Lithography 2020

21 September 2020 | Online Only, California, United States

Extreme Ultraviolet (EUV) Lithography XI

24 February 2020 | San Jose, California, United States

International Conference on Extreme Ultraviolet Lithography 2019

16 September 2019 | Monterey, California, United States

Extreme Ultraviolet (EUV) Lithography X

25 February 2019 | San Jose, California, United States

International Conference on Extreme Ultraviolet Lithography 2018

17 September 2018 | Monterey, California, United States

Extreme Ultraviolet (EUV) Lithography IX

26 February 2018 | San Jose, California, United States

International Conference on Extreme Ultraviolet Lithography

11 September 2017 | Monterey, California, United States

Extreme Ultraviolet (EUV) Lithography VIII

27 February 2017 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography VII

22 February 2016 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography VI

23 February 2015 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography V

24 February 2014 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography IV

25 February 2013 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography III

13 February 2012 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography II

28 February 2011 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography

22 February 2010 | San Jose, California, United States

Optical Microlithography XVIII

1 March 2005 | San Jose, California, United States

Optical Microlithography XVII

24 February 2004 | Santa Clara, California, United States

Optical Microlithography XVI

25 February 2003 | Santa Clara, California, United States

Showing 5 of 25 Conference Committees

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