Dr. Kyle Patterson Profile

Dr. Kyle Patterson

Engineer at NXP Semiconductors

SPIE Involvement:

Author

Publications (25)

Proceedings Article | 28 March 2007 Paper

Circuit-based SEM contour OPC model calibration

Kyle Patterson, Jim Vasek, Chi Min Yuan, George Bailey, Ir Kusnadi, Thuy Do, John Sturtevant

Proceedings Volume 6521, 65211N (2007) https://doi.org/10.1117/12.713044

KEYWORDS: Calibration, Optical proximity correction, Data modeling, Scanning electron microscopy, Model-based design, Critical dimension metrology, Process modeling, Manufacturing, Data processing, Metrology

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Proceedings Article | 14 March 2006 Paper

Reticle enhancement verification for the 65nm and 45nm nodes

Kevin Lucas, Kyle Patterson, Robert Boone, Corinne Miramond, Amandine Borjon, Jerome Belledent, Olivier Toublan, Jorge Entradas, Yorick Trouiller

Proceedings Volume 6156, 61560R (2006) https://doi.org/10.1117/12.658823

KEYWORDS: Resolution enhancement technologies, Optical proximity correction, Process modeling, Error analysis, Image processing, Semiconducting wafers, Reticles, Optical lithography, Photomasks, Model-based design

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Proceedings Article | 5 November 2005 Paper

Through-process window resist modelling strategies for the 65 nm node

Amandine Borjon, Jerôme Belledent, Yorick Trouiller, Kyle Patterson, Kevin Lucas, Christophe Couderc, Frank Sundermann, Jean-Christophe Urbani, Stanislas Baron, Yves Rody, Christian Gardin, Franck Foussadier, Patrick Schiavone

Proceedings Volume 5992, 599219 (2005) https://doi.org/10.1117/12.632096

KEYWORDS: Data modeling, Calibration, Statistical modeling, Printing, Critical dimension metrology, Electroluminescence, Convolution, Modeling, Mathematical modeling, Computer simulations

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Proceedings Article | 5 November 2005 Paper

Evaluation of transparent etch stop layer phase shift mask patterning and comparison with the single trench undercut approach

Y. Rody, P. Martin, C. Couderc, P. Sixt, C. Gardin, K. Lucas, K. Patterson, C. Miramond-Collet, J. Belledent, R. Boone, A. Borjon, Y. Trouiller

Proceedings Volume 5992, 59920R (2005) https://doi.org/10.1117/12.632561

KEYWORDS: Etching, Optical lithography, Photomasks, Quartz, Phase shifts, Printing, Electroluminescence, Manufacturing, Chromium, Optical proximity correction

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Despite the complexity of AAPSM patterning using the complementary PSM approach with respect to OPC correction, mask making, fab logistics etc, the technique still remains a valuable solution for special products where a low CD dispersion printing process is required. For current and next generation process technologies (90-65nm ground rules), the most common alternating mask solution of single trench etch with or without undercut becomes more difficult to manufacture. Especially challenging is the aspect ratio control of quartz etched trenches as a function of density in order to assure the correct phase angle and sidewall for dense and isolated structures over all phase shifted geometries. In order to solve this problem, a modified mask architecture is proposed, called the Transparent Etch Stop Layer (TESL) phase shift mask. In TESL, a transparent (etch stop) layer is deposited on the quartz substrate, followed by the deposition of a quartz layer having a thickness corresponding to the required phase angle for the used wavelength. On top a Chromium layer will be deposited. The patterning of this mask will be quite similar to the single trench variant. The difference is, that now an overetch can be applied for the phase definition resulting from the high etch selectivity of quartz to the etch stop material. The result of this approach should be that we can better control the phase depth and sidewall angle for dense and isolated structures. In this paper we will discuss the results of the printing tests performed using TESL masks especially with respect to litho process window, and we will compare these with the single trench undercut approach. Simulation results are presented with respect to shifter sidewall profile and TESL thickness in order to optimize image imbalance. Throughout the study we will correlate simulations and measurements to the after-MBOPC CD values for the shifter structures. These results will allow us to determine if the TESL AAPSM approach can be a more effective alternative to the single trench undercut approach.

Proceedings Article | 28 June 2005 Paper

Dual layer patterning failures in complex RET processes using ORC tools and pre- or post-optical proximity correction strategy

Christophe Couderc, Jerome Belledent, Amandine Borjon, Yorick Trouiller, Frank Sundermann, Kevin Lucas, Jean-Christophe Urbani, Franck Foussadier, Yves Rody, Kyle Patterson, Stanislas Baron

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617412

KEYWORDS: Optical proximity correction, Resolution enhancement technologies, Multilayers, Optical lithography, Photomasks, Optics manufacturing, Semiconducting wafers, Metals, Manufacturing, Lithography

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Proceedings Article | 28 June 2005 Paper

Correction of long-range effects applied to the 65-nm node

Jerome Belledent, James Word, Yorick Trouiller, Christophe Couderc, Corinne Miramond, Olivier Toublan, Jean-Damien Chapon, Stanislas Baron, Amandine Borjon, Franck Foussadier, Christian Gardin, Kevin Lucas, Kyle Patterson, Yves Rody, Frank Sundermann, Jean-Christophe Urbani

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617433

KEYWORDS: Critical dimension metrology, Etching, Photomasks, Convolution, Optical proximity correction, Electrons, Point spread functions, Optical lithography, Scattering, Light scattering

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Proceedings Article | 12 May 2005 Paper

Assessment of complementary double dipole lithography for 45nm and 32nm technologies

Sergei Postnikov, Emilien Robert, Philippe Thony, Kyle Patterson, Scott Warrick, Daniel Henry, Andres Torres, Olivier Toublan

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601756

KEYWORDS: Photomasks, Lithography, Monte Carlo methods, Critical dimension metrology, Optical proximity correction, Polarization, Lithographic illumination, Optical lithography, SRAF, Nanoimprint lithography

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Proceedings Article | 12 May 2005 Paper

High accuracy 65nm OPC verification: full process window model vs. critical failure ORC

Amandine Borjon, Jerome Belledent, Shumay Shang, Olivier Toublan, Corinne Miramond, Kyle Patterson, Kevin Lucas, Christophe Couderc, Yves Rody, Frank Sundermann, Jean-Christophe Urbani, Stanislas Baron, Yorick Trouiller, Patrick Schiavone

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600471

KEYWORDS: Data modeling, Optical proximity correction, Calibration, Printing, Optical lithography, Scanning electron microscopy, Process modeling, 3D modeling, Lithography, Photomasks

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It is becoming more and more difficult to ensure robust patterning after OPC due to the continuous reduction of layout dimensions and diminishing process windows associated with each successive lithographic generation. Lithographers must guarantee high imaging fidelity throughout the entire range of normal process variations. The techniques of Mask Rule Checking (MRC) and Optical Rule Checking (ORC) have become mandatory tools for ensuring that OPC delivers robust patterning. However the first method relies on geometrical checks and the second one is based on a model built at best process conditions. Thus those techniques do not have the ability to address all potential printing errors throughout the process window (PW). To address this issue, a technique known as Critical Failure ORC (CFORC) was introduced that uses optical parameters from aerial image simulations. In CFORC, a numerical model is used to correlate these optical parameters with experimental data taken throughout the process window to predict printing errors. This method has proven its efficiency for detecting potential printing issues through the entire process window [1]. However this analytical method is based on optical parameters extracted via an optical model built at single process conditions. It is reasonable to expect that a verification method involving optical models built from several points throughout PW would provide more accurate predictions of printing errors for complex features. To verify this approach, compact optical models similar to those used for standard OPC were built and calibrated with experimental data measured at the PW limits. This model is then applied to various test patterns to predict potential printing errors. In this paper, a comparison between these two approaches is presented for the poly layer at 65 nm node patterning. Examples of specific failure predictions obtained separately with the two techniques are compared with experimental results. The details of implementing these two techniques on full product layouts are also included in this study.

Proceedings Article | 5 May 2005 Paper

Improving model-based OPC performance for the 65-nm node through calibration set optimization

Kyle Patterson, Yorick Trouiller, Kevin Lucas, Jerome Belledent, Amandine Borjon, Yves Rody, Christophe Couderc, Frank Sundermann, Jean-Christophe Urbani, Stanislas Baron

Proceedings Volume 5756, (2005) https://doi.org/10.1117/12.601166

KEYWORDS: Calibration, Data modeling, Optical proximity correction, Statistical modeling, Performance modeling, Model-based design, Photoresist materials, Printing, Coastal modeling, Optimization (mathematics)

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Proceedings Article | 5 May 2005 Paper

65nm OPC and design optimization by using simple electrical transistor simulation

Yorick Trouiller, Thierry Devoivre, Jerome Belledent, Franck Foussadier, Amandine Borjon, Kyle Patterson, Kevin Lucas, Christophe Couderc, Frank Sundermann, Jean-Christophe Urbani, Stanislas Baron, Yves Rody, Jean-Damien Chapon, Franck Arnaud, Jorge Entradas

Proceedings Volume 5756, (2005) https://doi.org/10.1117/12.600887

KEYWORDS: Transistors, Ions, Optical proximity correction, Lithography, Optical lithography, Lithium, Logic, Photomasks, Lithographic illumination, Manufacturing

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Proceedings Article | 5 May 2005 Paper

Investigation of model-based physical design restrictions

Kevin Lucas, Stanislas Baron, Jerome Belledent, Robert Boone, Amandine Borjon, Christophe Couderc, Kyle Patterson, Lionel Riviere-Cazaux, Yves Rody, Frank Sundermann, Olivier Toublan, Yorick Trouiller, Jean-Christophe Urbani, Karl Wimmer

Proceedings Volume 5756, (2005) https://doi.org/10.1117/12.601105

KEYWORDS: Model-based design, Optical proximity correction, Optical lithography, Data modeling, Lithography, Systems modeling, Semiconductors, Resolution enhancement technologies, Reticles, Semiconducting wafers

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Proceedings Article | 6 December 2004 Paper

Closing the defect printability loop: optimizing defect specifications for an established lithographic process

Kyle Patterson, Clare Wakefield, Pierre Sixt, Frank Sundermann, Yorick Trouiller, Jerome Belledent, Christophe Couderc, Yves Rody, Kevin Lucas

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569257

KEYWORDS: Semiconducting wafers, Metrology, Reticles, Lithography, Feature extraction, Optical proximity correction, Photomasks, Photoresist processing, Calibration, Array processing

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Proceedings Article | 28 May 2004 Paper

MEV as a new constraint for lithographers in the sub-100-nm regime

Yorick Trouiller, Sergei Postnikov, Kevin Lucas, Frank Sundermann, Kyle Patterson, Jerome Belledent, Christophe Couderc, Yves Rody

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.556617

KEYWORDS: Electroluminescence, Critical dimension metrology, Photomasks, Semiconducting wafers, Lithography, Cadmium, Logic devices, Process control, Sodium, SRAF

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Proceedings Article | 28 May 2004 Paper

Critical failure ORC: application to the 90-nm and 65-nm nodes

Jerome Belledent, Shumay Shang, Yorick Trouiller, Corinne Miramond, Kyle Patterson, Olivier Toublan, Christophe Couderc, Frank Sundermann, Yves Rody

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537190

KEYWORDS: Optical proximity correction, Data modeling, Calibration, Printing, Visualization, Failure analysis, Bridges, Scattering, Image processing, Semiconducting wafers

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Proceedings Article | 2 June 2003 Paper

Line-edge roughness reduction and CD slimming using hardbake processing

Richard Peters, Kevin Lucas, Jonathan Cobb, Colita Parker, Kyle Patterson, Robb McCauley, Monique Ercken, Frieda Van Roey, Nadia Vandenbroeck, Ivan Pollentier

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.485027

KEYWORDS: Line edge roughness, Monochromatic aberrations, Transistors, Scanning electron microscopy, 193nm lithography, Cadmium, Optical lithography, Extreme ultraviolet, Etching, Control systems

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Proceedings Article | 30 July 2002 Paper

New alternating phase-shifting mask conversion methodology using phase conflict resolution

Christophe Pierrat, Michel Cote, Kyle Patterson

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474582

KEYWORDS: Phase shifts, Photomasks, Binary data, Lithography, 193nm lithography, Optical proximity correction, Printing, Scanners, Standards development, Resolution enhancement technologies

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Proceedings Article | 30 July 2002 Paper

Model-based design improvements for the 100-nm lithography generation

Kevin Lucas, Sergei Postnikov, Kyle Patterson, Chi-Min Yuan, Carla Nelson-Thomas, Matthew Thompson, Russell Carter, Lloyd Litt, Patrick Montgomery, Karl Wimmer

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474563

KEYWORDS: Optical proximity correction, Lithography, Reticles, Model-based design, Semiconducting wafers, Photomasks, 193nm lithography, Optical lithography, Lithographic illumination, Data modeling

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Proceedings Article | 30 July 2002 Paper

Effect of quartz phase etch on 193-nm alternating phase-shift mask performance for the 100-nm node

Kyle Patterson, Lloyd Litt, John Maltabes, Greg Hughes, Trish Robertson, B. Montgomery

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474481

KEYWORDS: Reticles, Photomasks, Data modeling, Etching, Quartz, Semiconducting wafers, Optical lithography, Phase shifts, Lithography, Phase shifting

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Proceedings Article | 24 August 2001 Paper

Dissolution behavior of fluoroalcohol-substituted polystyrenes

Daniel Hall, Brian Osborn, Kyle Patterson, Sean Burns, C. Grant Willson

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436831

KEYWORDS: Polymers, Absorbance, Photoresist materials, Semiconducting wafers, Head-mounted displays, Coating, Liquids, Analog electronics, Magnesium, Nitrogen

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Proceedings Article | 22 August 2001 Paper

Experimental determination of the impact of polysilicon LER on sub-100-nm transistor performance

Kyle Patterson, John Sturtevant, John Alvis, Nancy Benavides, Douglas Bonser, Nigel Cave, Carla Nelson-Thomas, William Taylor, Karen Turnquest

Proceedings Volume 4344, (2001) https://doi.org/10.1117/12.436808

KEYWORDS: Line edge roughness, Transistors, Semiconducting wafers, Optical lithography, Etching, Scanning electron microscopy, Critical dimension metrology, Photoresist materials, Reflectivity, Binary data

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Proceedings Article | 23 June 2000 Paper

Polymers for 157-nm photoresist applications: a progress report

Kyle Patterson, Mikio Yamachika, Raymond Hung, Colin Brodsky, Shintaro Yamada, Mark Somervell, Brian Osborn, Daniel Hall, Gordana Dukovic, Jeff Byers, Will Conley, C. Grant Willson

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388320

KEYWORDS: Photoresist materials, Polymers, Absorbance, Photoresist developing, Transparency, Deep ultraviolet, Etching, Vacuum ultraviolet, Resistance, Fluorine

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Proceedings Article | 23 June 2000 Paper

Using alicyclic polymers in top surface imaging systems to reduce line-edge roughness

Mark Somervell, David Fryer, Brian Osborn, Kyle Patterson, Sungseo Cho, Jeff Byers, C. Grant Willson

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388311

KEYWORDS: Polymers, Line edge roughness, Glasses, Semiconducting wafers, Imaging systems, Etching, FT-IR spectroscopy, Photoresist materials, Image resolution, Absorbance

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Proceedings Article | 29 June 1998 Paper

Positive- and negative-tone water-processable photoresists: a progress report

Shintaro Yamada, David Medeiros, Kyle Patterson, Wei-Lun Jen, Timo Rager, Qinghuang Lin, Carlos Lenci, Jeff Byers, Jennifer Havard, Dario Pasini, Jean Frechet, C. Grant Willson

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312414

KEYWORDS: Polymers, Photoresist materials, Switches, Photoresist developing, Etching, Imaging systems, Resistance, Photoresist processing, Polymer thin films, Chromophores

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Proceedings Article | 29 June 1998 Paper

Improving the performance of 193-nm photoresists based on alicyclic polymers

Kyle Patterson, Uzodinma Okoroanyanwu, Tsutomu Shimokawa, Sungseo Cho, Jeff Byers, C. Grant Willson

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312356

KEYWORDS: Polymers, Etching, Photoresist materials, Lithography, Photomasks, Resistance, Photoresist developing, Polymerization, Bioalcohols, Absorbance

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