As the design rule of the semiconductor devices approaches to 90nm node technology, the defect controllability of the photomask becomes critical success factor. The halftone defects generated in photomask cannot be easily judged because the results of Aerial Image Measurement System (AIMS) are flexible with the defect size and
transmission. Also, the printability of halftone defect on wafer is not clear because of low sensitivity of inspection system for pinholes. In this paper, halftone defects with programmed size were fabricated by Focused Ion Beam (FIB) repair tool. We evaluated the transmission correlation of the halftone defects between printability with 248nm simulation tool and inspection machine with 365nm light source. We could make the judgment criteria of halftone defects captured by inspection machine without AIMS result from this correlation result. Inspection machines such as KLA-Tencor and Lasertec are used to verify the detectability of halftone defects. Wafer printability was simulated using AIMS fab 248. Even though the transmission of halftone defects is same, the energy intensity of large size defects is higher than that of small size.
The semiconductor industry continuously shrink the linewidths and the smaller linewidths are easily affected by the defects. The defects have to be detected to prevent printed images on wafers. This paper will present the detection capability of current inspection machines for chrome defects on attenuated MoSiN layer and simulation results for the effect of chrome defect on attenuated layer. Two inspection machines based on i-line light source were used for comparison of detection capability for chrome defect on attenuated layer. The effect of chrome defect on attenuated MoSiN layer was evaluated with MSM 100 at 248 nm wavelength.