Super-resolution near-field structures (super-RENS) with antimony bismuth mask layer (Sb<sub>1-x</sub>Bi<sub>x</sub>, X =0, 0.1, 0.2 and 0.9) were fabricated by magnetron sputtering. AgInSbTe and ZnS-SiO<sub>2</sub> were used as recording layer and dielectric layer respectively. Static recording tests with and without super-RENS were carried out using static recording tester whose laser wavelength is 406.7 and numerical aperture is 0.8. The recorded marks were observed by atomic force microscopy (AFM). The influences of Bi proportion in the films on the super-resolution recording properties were investigated.