CONFERENCE PROCEEDINGS
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Dr. Laurent Bary
at LAAS-CNRS
SPIE Involvement:
Author
Publications (5)
Proceedings Article | 4 December 2010 Paper
MEMS switch for 60 GHz band
D. Vasilache, G. Constantinidis, M. Dragoman, A. Takacs, F. Vladoianu, T. Kostopoulos, G. Boldeiu, V. Moagar, Catalin Tibeica, L. Bary, R. Plana
Proceedings Volume 7821, 78210O (2010) https://doi.org/10.1117/12.881775
KEYWORDS: Switches, Manufacturing, Microelectromechanical systems, Gold, Optics manufacturing, Extremely high frequency, Switching, Semiconducting wafers, Design for manufacturability, Computer simulations
Proceedings Article | 20 December 2006 Paper
Millimeter-wave monolithic integrated receivers based on GaAs micromachining
G. Konstantinidis, D. Neculoiu, A. Stavinidris, Z. Chatzopoulos, A. Muller, K. Tsagaraki, D. Vasilache, I. Petrini, C. Buiculescu, L. Bary, R. Plana
Proceedings Volume 6415, 64150C (2006) https://doi.org/10.1117/12.695166
KEYWORDS: Receivers, Gallium arsenide, Antennas, Diodes, Manufacturing, Etching, Micromachining, Photomasks, Extremely high frequency, Semiconducting wafers
Proceedings Article | 1 July 2005 Paper
Efficient topology and design methodology for RF MEMS switches
B. Ducarouge, D. Dubuc, S. Melle, K. Grenier, L. Mazenq, L. Bary, R. Plana
Proceedings Volume 5836, (2005) https://doi.org/10.1117/12.609396
KEYWORDS: Switches, Microelectromechanical systems, Bridges, Electrodes, Silicon, Microwave radiation, Electromechanical design, Electromagnetism, Capacitance, Device simulation
Proceedings Article | 25 May 2004 Paper
Low frequency noise behavior in GaN HEMT’s on silicon substrate
Laurent Bary, Elena Angeli, Abdelali Rennane, Jean-Guy Tartarin, Jacques Graffeuil, Robert Plana, Sylvain Delage, Jean-Claude de Jaegger, Yvon Cordier
Proceedings Volume 5470, (2004) https://doi.org/10.1117/12.547046
KEYWORDS: Field effect transistors, Amplifiers, Gallium nitride, Silicon, Phase measurement, Transistors, Resistance, Oscillators, Microwave radiation, Switches
Proceedings Article | 25 May 2004 Paper
Using low frequency noise characterization of AlGaN/GaN HEMT as a tool for technology assessment and failure prediction
Jean-Guy Tartarin, Abdelali Rennane, Elena Angeli, Laurent Bary, Jean-Claude De Jaeger, Sylvain Delage, Robert Plana, Jacques Graffeuil
Proceedings Volume 5470, (2004) https://doi.org/10.1117/12.547022
KEYWORDS: Field effect transistors, Sapphire, Silicon, Gallium nitride, Quantum wells, Patterned sapphire substrate, Transistors, Resistors, Silicon carbide, Tin
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