Prof. Laurent Vivien Profile

Prof. Laurent Vivien

Head of Silicon Photonics Group/CNRS Researcher at Ctr de Nanosciences et de Nanotechnologies

SPIE Involvement:

Conference Program Committee | Conference Chair | Conference Co-Chair | Editor | Author

Publications (109)

SPIE Conference Volume | August 24, 2018

Silicon Photonics: From Fundamental Research to Manufacturing

PROCEEDINGS ARTICLE | May 23, 2018

High-performance sub-wavelength engineered silicon Bragg-rejection filters (Conference Presentation)

Proc. SPIE. 10686, Silicon Photonics: From Fundamental Research to Manufacturing

KEYWORDS: Optical components, Optical filters, Modulation, Waveguides, Etching, Silicon, Photonic crystals, Data communications, Semiconducting wafers, Nanolithography

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The silicon-on-insulator (SOI) platform allows for a miniaturization of optical elements at the micron size. It is now a mature technology, with high quality material and well-known fabrication processes. Another advantage stems in its compatibility with the CMOS facilities. The SOI platform is used already for numerus applications such as datacom, sensing or manipulation of quantum objects. Bragg filters are often used for on-chip the rejection of pump lasers. They can also be used for sensing purposes. By periodically modulating a standard waveguide width, it is possible to realize a 1-D photonic crystal with a forbidden wavelength band. In principle, the bandwidth and central wavelength of this bandgap can be tailored just by a proper design of the introduced corrugation. However, the very large index contrast of Si-wires makes the realization of narrowband rejection filters a technological challenge, requiring multiple etching steps or corrugation widths of a few tens of nanometers. Sub-wavelength nanostructuration of Si waveguides has shown to allow narrowband operation with a single-etch process, but reported rejection levels remained limited. Here we present an innovative differential corrugation approach that allows the realization of narrowband rejection optical filters with relaxed fabrication constraints. By sub-wavelength engineering of the waveguide geometry we experimentally demonstrated simultaneous high rejection of 50dB and narrowband operations less than 3nm. We propose new subwavelength designs based on subwavelength structures having two subperiods in each Bragg period. We also investigate the equivalent asymmetric structure to reduce the index contrast in the periods and further reduce the bandwidth without adding any new fabrication constraints. We have fabricated the sub-wavelength engineered filters in standard SOI wafer with a 220 nm thick Si guiding layer and bottom oxide layer of 2 µm. We have used electron beam lithography with 5 nm step-size and have patterned the structurse by dry etching with an inductively coupled plasma etcher. Finally, we have covered the devices with PMMA to provide symmetric cladding. We report results showing that subwavelength Bragg filter geometries allow a drastic reduction of the operating optical bandwidth to the 0.6nm-2.5nm range if compared with regular Bragg filters (20 nm) while retaining still a strong rejection level of around 40dB. Similarly, each asymmetric version was observed to be bandwidth narrower. To sum up, this paper is an investigation of advanced SOI waveguide Bragg mirrors. We report that the use of subwavelength corrugations and a judicious of waveguide Bragg asymmetry allow to push the extinction ratio/operating bandwidth beyond its traditional limit.

PROCEEDINGS ARTICLE | May 23, 2018

High rejection ratio silicon membrane Bragg filters (Conference Presentation)

Proc. SPIE. 10671, Metamaterials XI

KEYWORDS: Transceivers, Photonic devices, Optical filters, Bragg gratings, Waveguides, Cladding, Silicon, CMOS technology, Silicon photonics, Data communications

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Silicon photonics is considered an enabling technology for next generation datacom applications, providing ultra-compact and high-bandwidth transceivers that are cost-effectively fabricated at the existing CMOS facilities. Among photonic devices developed in silicon, Bragg gratings are routinely used for the realization of key functionalities including wavelength filtering, dispersion engineering and sensing. However, the realization of Bragg filters that simultaneously provides narrowband operation and high rejection remains a challenge in the Si platform. Indeed, the small core size of Si wires, together with the high index contrast between the silicon and the oxide cladding results in a strong interaction of the optical mode with the Bragg structure. Several approaches have been proposed to implement narrowband Bragg filters in Si wires including ultra-small corrugations (a few nanometres), periodic claddings, sub-wavelength engineering or inter-mode coupling. Nevertheless, these filters typically have comparatively weak light rejection performance due to fabrication errors limiting the accurate control of the grating geometry over few millimeter-long waveguide structures. In this work, we present a novel waveguide Bragg grating geometry that leverages the large index contrast between Si and air in membrane waveguides to overcome these limitations, yielding both narrow bandwidth and high rejection ratio. We use a novel waveguide corrugation geometry that radiates out the higher order modes, allowing effective single-mode operation for micrometric fully etched membrane waveguides. The high mode confinement of these waveguides results in weak interaction with the sidewall corrugation, thus narrowband operation is achieved. On the other hand, the high rejection ratio is achieved by combining reflection and radiation effects within the Bragg resonance. Based on this concept, we designed and experimentally demonstrated notch filters in single-etch suspended Si waveguides with cross-sections as large as 0.5 µm (height) by 1.1 µm (width). We show a narrow bandwidth of 4 nm for a 500 nm wide corrugation, with a high rejection ratio exceeding 50 dB for a filter length of only 700 µm

PROCEEDINGS ARTICLE | May 23, 2018

High-speed characteristics of strain-induced pockels effect in silicon (Conference Presentation)

Proc. SPIE. 10686, Silicon Photonics: From Fundamental Research to Manufacturing

KEYWORDS: Fabrication, Modulation, Waveguides, Silicon, Data transmission, Silicon films, Telecommunications, Silicon photonics, Electro optics, Data communications

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PROCEEDINGS ARTICLE | May 22, 2018

Ge-rich SiGe waveguides for supercontinuum generation in the mid-IR

Proc. SPIE. 10686, Silicon Photonics: From Fundamental Research to Manufacturing

KEYWORDS: Mid-IR, Refractive index, Waveguides, Dispersion, Germanium, Silicon, Wave propagation, Photonics, Supercontinuum generation, Absorption

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PROCEEDINGS ARTICLE | May 22, 2018

Mode converters based on periodically perturbed waveguides for mode division multiplexing

Proc. SPIE. 10686, Silicon Photonics: From Fundamental Research to Manufacturing

KEYWORDS: Waveguides, Polarization, Wavelength division multiplexing, Multiplexing, Wave propagation, Telecommunications, Optical communications, Integrated photonics

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PROCEEDINGS ARTICLE | May 22, 2018

7.5-µm wavelength fiber-chip grating couplers for Ge-rich SiGe photonics integrated circuits

Proc. SPIE. 10686, Silicon Photonics: From Fundamental Research to Manufacturing

KEYWORDS: Optical fibers, Mid-IR, Diffraction, Optical design, Waveguides, Polarization, Silicon, Photonic integrated circuits, Silicon photonics, Diffraction gratings

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The mid infrared (MIR) region, which ranges from 2 μm to 20 μm, has attracted a lot of interest, particularly for novel applications in medical diagnosis, astronomy, chemical and biological sensing or security, to name a few. Most recently, Germanium-rich Silicon Germanium (Ge-rich SiGe) has emerged as a promising waveguide platform to realize complex mid-IR photonic integrated circuits. The Ge-rich SiGe graded buffer benefits from a wide transparency window, strong 3rd order nonlinearity, and the compatibility with mature large-scale fabrication processes, which in turn, paves the way for the development of mid-IR photonic devices that afford improved on-chip functionalities, altogether with compact footprints and cost-effective production. Albeit, low-loss waveguides and wideband Mach-Zehnder interferometers (MZIs) have been recently successfully demonstrated at mid-IR wavelengths, the coupling of light between external access ports, typically optical fibers, and integrated circuits remains challenging. Surface grating couplers provide technologically attractive scenario for light coupling, since they allow flexible placement on the chip, thereby enabling automatic testing of fabricated devices on a wafer-scale, preferred for large-volume developments. In this work, we report two designs for surface grating couplers implemented on the Ge-rich SiGe graded buffer. The grating couplers are designed for transverse electric (TE) and transverse magnetic (TM) polarizations, respectively, both operating at 7.5 μm wavelength. In particular, the TE-designed grating coupler with an inverse taper excitation arrangement yields a coupling efficiency of 6.3% (-12 dB), a 1-dB bandwidth of 300 nm, and reduced back-reflection less than 1%. Furthermore, the TM-designed grating coupler with a conventional taper injection stage predicts an improved coupling performance up to 11% (-9.6 dB), with a 1-dB bandwidth of 310 nm, and only 1% back-reflection. These results open up the way for the realization of complex and multifunctional photonics integrated circuits on Ge-rich SiGe platform with operation at midIR wavelengths.

PROCEEDINGS ARTICLE | May 22, 2018

Integrated SiN on SOI dual photonic devices for advanced datacom solutions

Proc. SPIE. 10686, Silicon Photonics: From Fundamental Research to Manufacturing

KEYWORDS: Photonic devices, Coarse wavelength division multiplexing, Waveguides, Polarization, Silicon, Wavelength division multiplexing, Wave propagation, Silicon photonics, Data communications, Semiconducting wafers

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PROCEEDINGS ARTICLE | May 21, 2018

Low-loss grating-coupled optical interfaces for large-volume fabrication with deep-ultraviolet optical lithography

Proc. SPIE. 10686, Silicon Photonics: From Fundamental Research to Manufacturing

KEYWORDS: Optical design, Optical lithography, Deep ultraviolet, Waveguides, Etching, Interfaces, Silicon, Reflectivity, Fiber couplers, Diffraction gratings

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PROCEEDINGS ARTICLE | May 21, 2018

Silicon photonic micro-ring resonator dedicated to an optoelectronic oscillator loop

Proc. SPIE. 10686, Silicon Photonics: From Fundamental Research to Manufacturing

KEYWORDS: Oscillators, Resonators, Waveguides, Silicon, Optoelectronics, Optical resonators, Silicon photonics, Microrings

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PROCEEDINGS ARTICLE | May 4, 2018

Silicon coupled cavities as a flexible platform for integrated nonlinear photonics

Proc. SPIE. 10672, Nanophotonics VII

KEYWORDS: Silicon, Complex systems, Frequency modulation, Photonics, Nonlinear optics, Silicon photonics, Four wave mixing, Photonic crystal devices

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PROCEEDINGS ARTICLE | April 5, 2018

Advanced solutions in silicon photonics using traditional fabrication methods and materials of CMOS technologies (Conference Presentation)

Proc. SPIE. 10537, Silicon Photonics XIII

KEYWORDS: Phase shifting, Modulation, Silica, Waveguides, Silicon, Modulators, CMOS technology, Silicon photonics, Phase shifts, Amplitude modulation

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PROCEEDINGS ARTICLE | March 14, 2018

High-speed Pockels effect in strained silicon waveguide (Conference Presentation)

Proc. SPIE. 10536, Smart Photonic and Optoelectronic Integrated Circuits XX

KEYWORDS: Photonic devices, Waveguides, Crystals, Silicon, Photonic crystals, Optoelectronic devices, Optical communications, Integrated optics, Silicon photonics, Hybrid optics

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PROCEEDINGS ARTICLE | March 14, 2018

Silicon membrane Bragg filters for near- and mid-infrared applications (Conference Presentation)

Proc. SPIE. 10535, Integrated Optics: Devices, Materials, and Technologies XXII

KEYWORDS: Oxides, Mid-IR, Transparency, Waveguides, Silicon, Nonlinear optics, Quantum optics, Data communications, Nonlinear filtering, Light wave propagation

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PROCEEDINGS ARTICLE | March 14, 2018

Hybrid integration of carbon nanotube emitters into silicon photonic nanoresonators (Conference Presentation)

Proc. SPIE. 10537, Silicon Photonics XIII

KEYWORDS: Light sources, Luminescence, Silicon, Single photon, Kerr effect, Optoelectronic devices, Nanomaterials, Silicon photonics, Optical interconnects, Carbon nanotubes

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PROCEEDINGS ARTICLE | March 14, 2018

Can we control the extrinsic losses of hollow core slow light silicon waveguides by the fabrication process? (Conference Presentation)

Proc. SPIE. 10544, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics XI

KEYWORDS: Slow light, Waveguides, Dispersion, Etching, Silicon, Photonic crystals, Control systems, Wave propagation, Silicon photonics, Light wave propagation

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PROCEEDINGS ARTICLE | March 14, 2018

High-directionality L-shaped fiber-chip grating couplers realized in 300-mm silicon-on-insulator platform with deep-ultraviolet lithography (Conference Presentation)

Proc. SPIE. 10535, Integrated Optics: Devices, Materials, and Technologies XXII

KEYWORDS: Lithography, Diffraction, Apodization, Mirrors, Deep ultraviolet, Etching, Silicon, Fiber couplers, Semiconducting wafers, Diffraction gratings

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PROCEEDINGS ARTICLE | February 23, 2018

Advanced modulation format using silicon modulators in the O-band

Proc. SPIE. 10535, Integrated Optics: Devices, Materials, and Technologies XXII

KEYWORDS: Digital signal processing, Modulation, Waveguides, Silicon, Phase shift keying, Modulators, Diodes, Silicon photonics, Binary data, Phase shifts

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PROCEEDINGS ARTICLE | February 22, 2018

Ge-rich graded-index Si1-xGex devices for Mid-IR integrated photonics

Proc. SPIE. 10537, Silicon Photonics XIII

KEYWORDS: Mid-IR, Refractive index, Waveguides, Polarization, Germanium, Silicon, Imaging spectroscopy, Wave propagation, Photonic integrated circuits, Integrated photonics

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Mid-infrared (mid-IR) silicon photonics is becoming a prominent research with remarkable potential in several applications such as in early medical diagnosis, safe communications, imaging, food safety and many more. In the quest for the best material platform to develop new photonic systems, Si and Ge depart with a notable advantage over other materials due to the high processing maturity accomplished during the last part of the 20th century through the deployment of the CMOS technology. From an optical viewpoint, combining Si with Ge to obtain SiGe alloys with controlled stoichiometry is also of interest for the photonic community since permits to increase the effective refractive index and the nonlinear parameter, providing a fascinating playground to exploit nonlinear effects. Furthermore, using Ge-rich SiGe gives access to a range of deep mid-IR wavelengths otherwise inaccessible (λ ~2-20 μm). In this paper, we explore for the first time the limits of this approach by measuring the spectral loss characteristic over a broadband wavelength range spanning from λ = 5.5 μm to 8.5 μm. Three different SiGe waveguide platforms are compared, each one showing higher compactness than the preceding through the engineering of the vertical Ge profile, giving rise to different confinement characteristics to the propagating modes. A flat propagation loss characteristic of 2-3 dB/cm over the entire wavelength span is demonstrated in Ge-rich graded-index SiGe waveguides of only 6 μm thick. Also, the role of the overlap fraction of the confined optical mode with the Si-rich area at the bottom side of the epitaxial SiGe waveguide is put in perspective, revealing a lossy characteristic compared to the other designs were the optical mode is located in the Ge-rich area at the top of the waveguide uniquely. These Ge-rich graded-index SiGe waveguides may pave the way towards a new generation of photonic integrated circuits operating at deep mid-IR wavelengths.

PROCEEDINGS ARTICLE | January 26, 2018

Ge-rich SiGe photonic-integrated circuits for mid-IR spectroscopy

Proc. SPIE. 10540, Quantum Sensing and Nano Electronics and Photonics XV

KEYWORDS: Mid-IR, Refractive index, Waveguides, Polarization, Dispersion, Germanium, Silicon, Nonlinear optics, Photonic integrated circuits, Spectroscopes

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SPIE Conference Volume | June 20, 2017

Integrated Photonics: Materials, Devices, and Applications IV

PROCEEDINGS ARTICLE | June 16, 2017

Pockels effect in strained silicon photonics (Conference Presentation)

Proc. SPIE. 10242, Integrated Optics: Physics and Simulations III

KEYWORDS: Nanotechnology, Electronics, Crystals, Silicon, Photonic crystals, Photonics systems, Optical communications, Integration, Silicon photonics, Optical interconnects

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PROCEEDINGS ARTICLE | June 16, 2017

Mid- and near-infrared Si waveguides for sensing applications (Conference Presentation)

Proc. SPIE. 10249, Integrated Photonics: Materials, Devices, and Applications IV

KEYWORDS: Oxides, Mid-IR, Transparency, Waveguides, Sensors, Silicon, Integrated photonics, Current controlled current source, Absorption

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PROCEEDINGS ARTICLE | June 16, 2017

Strain-induced Pockels effect in silicon waveguides (Conference Presentation)

Proc. SPIE. 10249, Integrated Photonics: Materials, Devices, and Applications IV

KEYWORDS: Nanotechnology, Waveguides, Crystals, Silicon, Modulators, Telecommunications, Integrated optics, Silicon photonics, Nonlinear crystals, Data communications

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PROCEEDINGS ARTICLE | May 17, 2017

Simplified model enabling optimization of silicon modulators

Proc. SPIE. 10242, Integrated Optics: Physics and Simulations III

KEYWORDS: Modulation, Waveguides, Silicon, Doping, Phase shift keying, Modulators, Computer simulations, 3D modeling, Telecommunications, Photonics, Integrated optics, Silicon photonics, Optimization (mathematics), Optical interconnects, Performance modeling, Microtechnology

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PROCEEDINGS ARTICLE | May 17, 2017

Strain induced by functional oxides for silicon photonics applications

Proc. SPIE. 10242, Integrated Optics: Physics and Simulations III

KEYWORDS: Oxides, Thin films, Modulation, Waveguides, Crystals, Silicon, Raman spectroscopy, Silicon films, Integrated optics, Integrated circuits, Silicon photonics, Functional oxides

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PROCEEDINGS ARTICLE | May 17, 2017

Polarization insensitive Ge-rich silicon germanium waveguides for optical interconnects on silicon

Proc. SPIE. 10242, Integrated Optics: Physics and Simulations III

KEYWORDS: Mach-Zehnder interferometers, Waveguides, Polarization, Birefringence, Dispersion, Etching, Germanium, Silicon, Wave propagation, Telecommunications, Brain-machine interfaces, Silicon photonics, Data centers, Data communications, Optical interconnects

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PROCEEDINGS ARTICLE | April 28, 2017

Second-order nonlinearities in strained silicon photonic structures (Conference Presentation)

Proc. SPIE. 10111, Quantum Sensing and Nano Electronics and Photonics XIV

KEYWORDS: Nanotechnology, Waveguides, Dispersion, Crystals, Silicon, Photonic crystals, Optical communications, Silicon photonics, Nanoelectronics, Plasma

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PROCEEDINGS ARTICLE | April 28, 2017

Subwavelength Si photonics for near- and mid-infrared applications (Conference Presentation)

Proc. SPIE. 10108, Silicon Photonics XII

KEYWORDS: Nanotechnology, Mid-IR, Diffraction, Refractive index, Optical lithography, Waveguides, Cladding, Silicon, Photonics, Silicon photonics

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PROCEEDINGS ARTICLE | February 20, 2017

Ge-rich SiGe waveguides for mid-infrared photonics

Proc. SPIE. 10108, Silicon Photonics XII

KEYWORDS: Mid-IR, Photonic devices, Astronomy, Medicine, Waveguides, Polarization, Dispersion, Germanium, Silicon, Buildings, Photonics, Nonlinear optics, Photonic integrated circuits, Biological and chemical sensing, Silicon photonics, Environmental sensing

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PROCEEDINGS ARTICLE | February 20, 2017

Hybrid integration of carbon nanotubes in silicon photonic structures

Proc. SPIE. 10107, Smart Photonic and Optoelectronic Integrated Circuits XIX

KEYWORDS: Semiconductors, Resonators, Waveguides, Polymers, Luminescence, Silicon, Modulators, Photonics, Silicon photonics, Optical interconnects, Single walled carbon nanotubes, Light, Carbon nanotubes

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PROCEEDINGS ARTICLE | July 27, 2016

Engineered SOI slot waveguide ring resonator V-shape resonance combs for refraction index sensing up to 1300nm/RIU (Conference Presentation)

Proc. SPIE. 9891, Silicon Photonics and Photonic Integrated Circuits V

KEYWORDS: Refractive index, CMOS sensors, Optical sensing, Resonators, Waveguides, Cladding, Water, Silicon, Integrated optics, CMOS technology

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Bio-detection based on CMOS technology boosts the miniaturization of detection systems and the success on highly efficient, robust, accurate, and low coast Lab-on-Chip detection schemes. Such on chip detection technologies have covered healthy related harmful gases, bio-chemical analytes, genetic micro RNA, etc. Their monitoring accuracy is mainly qualified in terms of sensitivity and limit of the detection (LOD) of the detection system. In this context, recently developed silicon on insulator (SOI) optical devices have displayed highly performant detection abilities that LOD could go beyond 10-8RIU and sensitivity could exceeds 103nm/RIU. The SOI integrated optical sensing devices include strip/slotted waveguide consisting in structures like Mach-Zehnder interferometers (MZI), ring resonators (RR), nano cavities, etc. Typically, hollow core RR and nano-cavities could exhibit higher sensitivity due to their optical mode confinement properties with a partial localization of the electric field in low index sensing regions than devices based on evanescent field tails outside of the optical cores. Furthermore, they also provide larger sensing areas for surface functionalization to reach higher sensitivities and lower LODs. The state of art of hollow core devices, either based on Bragg gratings formed from a slot waveguide cavity or photonic crystal slot cavities, show sensitivities (S) up to 400nm/RIU and Figure of Merit (FOM) around 3,000 in water environment, FOM being defined as the inverse of LOD and precisely as FOM=SQ/λ, with λ the resonance wavelength and Q the quality factor of the considered resonator. Such high achieved FOMs in nano cavities are mainly due to their large Q factors around 15,000. While for mostly used RR, which do not require particular design strategies, relatively low Q factors around 1800 in water are met and moderate sensitivities about 300nm/RIU are found. In this work, we present here a novel slot ring resonator design to make breakthrough of the performance of slot ring resonator sensing ability. Different from the normal sensing regime by monitoring one specific resonance (λres) peak shift, the proposed approach stems from the sensitivity of the RR critical coupling. The critical coupling peak is auto-selected out by matching the following condition: the ring resonator’s round trip attenuation coefficient a(λ) being equal to the coupler self-coupling coefficient k(λ), thus resulting in the deepest extinction ratio (ER) among the spectrum RR comb. The obtained sensing comb, based on a V-shape spectrum envelop, is engineered by controlling a(λ) and k(λ) with opposite monotonicities. Both a(λ)and k(λ) are tuned to have a large dispersion along the wavelength, which means that |a(λ)-k(λ)| keeps rapidly increasing as λres is far away from λc, eliminating the resonance ER quickly down to 0. Experimentally, slot waveguide ring resonators with a radius of 50µm have been fabricated on a standard silicon platform with a Si thickness of 220nm, loaded by racetrack couplers with a straight coupling length of 20µm. Sensing experiments have been carried out by changing the top cladding material from a series of Cargille optical liquids with refraction index values ranging from 1.3 to 1.5. The Q factors of critical coupling resonances was monitored from 2,000 to 6,000, and measured wavelength shifts of this peak are from 1.41µm to 1.56µm. The maximum sensitivity of 1300nm/RIU is observed in the cladding index range 1.30-1.35. To conclude, a new sensing regime by tracking the critical coupling resonance λc of slot waveguide ring resonators is demonstrated. The reported sensitivity is up 1300nm/RIU around the water RI of 1.33, and the monitored sensing FOM is about 2300, which is very close to the FOM values achieved from nanobeam cavities. This work can thus contribute to future integrated optical sensing schemes based on slot RRs.

PROCEEDINGS ARTICLE | July 27, 2016

Subwavelength engineered fiber-to-chip silicon-on-sapphire interconnects for mid-infrared applications (Conference Presentation)

Proc. SPIE. 9891, Silicon Photonics and Photonic Integrated Circuits V

KEYWORDS: Mid-IR, Sensors, Silicon, Sapphire, Lab on a chip, Absorption spectroscopy, Photonic integrated circuits, Silicon photonics

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The mid-Infrared wavelength range (2-20 µm), so-called fingerprint region, contains the very sharp vibrational and rotational resonances of many chemical and biological substances. Thereby, on-chip absorption-spectrometry-based sensors operating in the mid-Infrared (mid-IR) have the potential to perform high-precision, label-free, real-time detection of multiple target molecules within a single sensor, which makes them an ideal technology for the implementation of lab-on-a-chip devices. Benefiting from the great development realized in the telecom field, silicon photonics is poised to deliver ultra-compact efficient and cost-effective devices fabricated at mass scale. In addition, Si is transparent up to 8 µm wavelength, making it an ideal material for the implementation of high-performance mid-IR photonic circuits. The silicon-on-insulator (SOI) technology, typically used in telecom applications, relies on silicon dioxide as bottom insulator. Unfortunately, silicon dioxide absorbs light beyond 3.6 µm, limiting the usability range of the SOI platform for the mid-IR. Silicon-on-sapphire (SOS) has been proposed as an alternative solution that extends the operability region up to 6 µm (sapphire absorption), while providing a high-index contrast. In this context, surface grating couplers have been proved as an efficient means of injecting and extracting light from mid-IR SOS circuits that obviate the need of cleaving sapphire. However, grating couplers typically have a reduced bandwidth, compared with facet coupling solutions such as inverse or sub-wavelength tapers. This feature limits their feasibility for absorption spectroscopy applications that may require monitoring wide wavelength ranges. Interestingly, sub-wavelength engineering can be used to substantially improve grating coupler bandwidth, as demonstrated in devices operating at telecom wavelengths. Here, we report on the development of fiber-to-chip interconnects to ZrF4 optical fibers and integrated SOS circuits with 500 nm thick Si, operating around 3.8 µm wavelength. Results on facet coupling and sub-wavelength engineered grating coupler solutions in the mid-IR regime will be compared.

PROCEEDINGS ARTICLE | July 27, 2016

Silicon-on-insulator integrated tunable polarization controller (Conference Presentation)

Proc. SPIE. 9891, Silicon Photonics and Photonic Integrated Circuits V

KEYWORDS: Optical imaging, Photon polarization, Polarization, Silicon, Optical communications, Integration, Integrated optics, Silicon photonics, Chemical elements, Tolerancing, Quantum information, Phase shifts

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PROCEEDINGS ARTICLE | July 27, 2016

Integration of carbon nanotubes in slot waveguides (Conference Presentation)

Proc. SPIE. 9891, Silicon Photonics and Photonic Integrated Circuits V

KEYWORDS: Waveguides, Silicon, Silicon photonics, Optical interconnects, Carbon nanotubes

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SPIE Conference Volume | June 6, 2016

Silicon Photonics and Photonic Integrated Circuits V

PROCEEDINGS ARTICLE | May 13, 2016

Silicon modulator based on interleaved capacitors in subwavelength grating waveguides

Proc. SPIE. 9891, Silicon Photonics and Photonic Integrated Circuits V

KEYWORDS: Oxides, Capacitors, Modulation, Waveguides, Dispersion, Silicon, Phase shift keying, Modulators, Wave propagation, Photonics, Silicon photonics, Plasma

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PROCEEDINGS ARTICLE | May 13, 2016

Coupling of semiconductor carbon nanotubes emission with silicon photonic micro ring resonators

Proc. SPIE. 9891, Silicon Photonics and Photonic Integrated Circuits V

KEYWORDS: Semiconductors, Resonators, Luminescence, Silicon, Near field, Photonics, Silicon photonics, Silicon carbide, Single walled carbon nanotubes, Group III-V semiconductors, Microrings, Near field optics, Carbon nanotubes

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PROCEEDINGS ARTICLE | May 13, 2016

DAPHNE silicon photonics technological platform for research and development on WDM applications

Proc. SPIE. 9891, Silicon Photonics and Photonic Integrated Circuits V

KEYWORDS: Optical lithography, Waveguides, Etching, Germanium, Silicon, Wavelength division multiplexing, Transmission electron microscopy, Photonic integrated circuits, Silicon photonics, Computer aided design

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PROCEEDINGS ARTICLE | May 13, 2016

Electro-absorption and electro-refraction in Ge/SiGe coupled quantum wells

Proc. SPIE. 9891, Silicon Photonics and Photonic Integrated Circuits V

KEYWORDS: Refractive index, Quantum wells, Modulation, Waveguides, Germanium, Silicon, Modulators, Optical testing, Optical communications, Transmittance, Integrated optics, Silicon photonics, Electro optics, Heterojunctions, Absorption

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PROCEEDINGS ARTICLE | May 13, 2016

Integrated mode converter for mode division multiplexing

Proc. SPIE. 9891, Silicon Photonics and Photonic Integrated Circuits V

KEYWORDS: Waveguides, Waveguides, Multiplexing, Telecommunications, Optical communications, Integrated optics, Silicon photonics, Space division multiplexing, Waveguide modes, Tolerancing, Systems modeling, Multimode interference devices, Phase shifts

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PROCEEDINGS ARTICLE | May 13, 2016

Highly efficient silicon capacitive modulators based on a vertical oxide layer

Proc. SPIE. 9891, Silicon Photonics and Photonic Integrated Circuits V

KEYWORDS: Refractive index, Modulation, Wave propagation, Geometrical optics, Electro optics

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PROCEEDINGS ARTICLE | May 13, 2016

Ge-rich silicon germanium as a new platform for optical interconnects on silicon

Proc. SPIE. 9891, Silicon Photonics and Photonic Integrated Circuits V

KEYWORDS: Mach-Zehnder interferometer, Photodetectors, Beam splitters, Quantum wells, Mach-Zehnder interferometers, Silica, Waveguides, Etching, Germanium, Silicon, Modulators, Photomasks, Silicon photonics, Optical interconnects

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PROCEEDINGS ARTICLE | March 15, 2016

Silicon germanium on graded buffer as a new platform for optical interconnects on silicon

Proc. SPIE. 9753, Optical Interconnects XVI

KEYWORDS: Photodetectors, Beam splitters, Quantum wells, Mach-Zehnder interferometers, Silica, Waveguides, Etching, Germanium, Silicon, Optical communications, Silicon photonics, Optical modulators, Optical interconnects

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PROCEEDINGS ARTICLE | March 14, 2016

Hybrid integration of carbon nanotubes into silicon slot photonic structures

Proc. SPIE. 9752, Silicon Photonics XI

KEYWORDS: Resonators, Waveguides, Polymers, Silicon, Silicon photonics, Silicon carbide, Electroluminescent displays, Single walled carbon nanotubes, Microrings, Carbon nanotubes

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SPIE Journal Paper | October 8, 2015

Carbon nanotube photonics: using microring resonators for tailoring semiconducting carbon nanotubes photoluminescence

Noury, Adrien , Le Roux, Xavier , Vivien, Laurent , Izard, Nicolas

JNP Vol. 10 Issue 01

KEYWORDS: Microrings, Resonators, Carbon nanotubes, Silicon, Semiconductors, Photonics, Luminescence, Waveguides, Silicon carbide, Optical microcavities

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SPIE Conference Volume | June 30, 2015

Integrated Photonics: Materials, Devices, and Applications III

PROCEEDINGS ARTICLE | November 13, 2014

GeSi photonics for telecommunication applications

Proc. SPIE. 9277, Nanophotonics and Micro/Nano Optics II

KEYWORDS: Quantum wells, Waveguides, Cladding, Germanium, Silicon, Wave propagation, Telecommunications, Photonics, Integrated optics, Active optics

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SPIE Conference Volume | May 28, 2014

Silicon Photonics and Photonic Integrated Circuits IV

PROCEEDINGS ARTICLE | May 1, 2014

Ge quantum-well waveguide modulator at 1.3 um

Proc. SPIE. 9133, Silicon Photonics and Photonic Integrated Circuits IV

KEYWORDS: Refractive index, Quantum wells, Waveguides, Germanium, Silicon, Modulators, Plasma enhanced chemical vapor deposition, Silicon photonics, PIN photodiodes, Absorption

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PROCEEDINGS ARTICLE | May 1, 2014

Modeling of PN interleaved phase shifters for high speed silicon modulators

Proc. SPIE. 9133, Silicon Photonics and Photonic Integrated Circuits IV

KEYWORDS: Refractive index, Data modeling, Waveguides, Silicon, Modulators, 3D modeling, Waveguide modes, Neodymium, Phase shifts, Absorption

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PROCEEDINGS ARTICLE | March 8, 2014

Introducing photonic devices for 40Gbits/s wavelength division multiplexing transceivers on 300-mm SOI wafers using CMOS processes

Proc. SPIE. 8988, Integrated Optics: Devices, Materials, and Technologies XVIII

KEYWORDS: Lithography, Waveguides, Etching, Germanium, Silicon, Doping, Photodiodes, Wavelength division multiplexing, Photomasks, Semiconducting wafers

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PROCEEDINGS ARTICLE | March 8, 2014

40 Gbit/s silicon modulators fabricated on 200-mm and 300-mm SOI wafers

Proc. SPIE. 8990, Silicon Photonics IX

KEYWORDS: Wafer-level optics, Waveguides, Silicon, Modulators, Diodes, Microelectronics, Silicon photonics, Optical modulators, Semiconducting wafers, Phase shifts

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PROCEEDINGS ARTICLE | September 11, 2013

Engineered SOI slot photonic crystal waveguides

Proc. SPIE. 8808, Active Photonic Materials V

KEYWORDS: Slow light, Finite-difference time-domain method, Waveguides, Dispersion, Crystals, Silicon, Light scattering, Photonic crystals, Optical testing, Scanning electron microscopy

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SPIE Conference Volume | May 29, 2013

Integrated Photonics: Materials, Devices, and Applications II

PROCEEDINGS ARTICLE | May 22, 2013

Phase-shift in waveguide integrated Ge quantum wells

Proc. SPIE. 8767, Integrated Photonics: Materials, Devices, and Applications II

KEYWORDS: Refractive index, Quantum wells, Waveguides, Germanium, Silicon, Modulators, Silicon photonics, Electro optics, Plasma, Absorption

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PROCEEDINGS ARTICLE | May 22, 2013

Ge on Si waveguide-integrated photodiodes for high speed and low power receivers

Proc. SPIE. 8767, Integrated Photonics: Materials, Devices, and Applications II

KEYWORDS: Photodetectors, Waveguides, Germanium, Silicon, Photodiodes, Receivers, Diodes, Ion implantation, Integrated circuits, Semiconducting wafers

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PROCEEDINGS ARTICLE | May 22, 2013

Light emission at telecom wavelengths from single-walled carbon nanotubes

Proc. SPIE. 8767, Integrated Photonics: Materials, Devices, and Applications II

KEYWORDS: Mirrors, Waveguides, Sensors, Polymers, Luminescence, Photons, Silicon, Single walled carbon nanotubes, Absorption, Carbon nanotubes

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PROCEEDINGS ARTICLE | May 7, 2013

A general approach for robust integrated polarization rotators

Proc. SPIE. 8781, Integrated Optics: Physics and Simulations

KEYWORDS: Refractive index, Phase shifting, Thermal optics, Waveguides, Polarization, Wave propagation, Waveguide modes, Tolerancing, Lawrencium, Phase shifts

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PROCEEDINGS ARTICLE | May 7, 2013

Ge/SiGe quantum well optical modulator

Proc. SPIE. 8781, Integrated Optics: Physics and Simulations

KEYWORDS: Refractive index, Quantum wells, Modulation, Waveguides, Germanium, Silicon, Modulators, Diodes, Optical modulators, Absorption

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PROCEEDINGS ARTICLE | March 14, 2013

40 Gb/s low-loss self-aligned silicon optical modulator

Proc. SPIE. 8629, Silicon Photonics VIII

KEYWORDS: Eye, Modulation, Waveguides, Electrodes, Silicon, Modulators, Diodes, Silicon photonics, Optical modulators, Phase shifts

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PROCEEDINGS ARTICLE | December 11, 2012

Towards carbon nanotube-based integrated photonics devices

Proc. SPIE. 8564, Nanophotonics and Micro/Nano Optics

KEYWORDS: Semiconductors, Waveguides, Polymers, Luminescence, Photons, Silicon, Integrated optics, Integrated photonics, Single walled carbon nanotubes, Carbon nanotubes

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SPIE Conference Volume | May 24, 2012

Silicon Photonics and Photonic Integrated Circuits III

PROCEEDINGS ARTICLE | May 12, 2012

Electroabsorption based on quantum-confined Stark effect from Ge/SiGe multiple quantum wells

Proc. SPIE. 8431, Silicon Photonics and Photonic Integrated Circuits III

KEYWORDS: Quantum wells, Modulation, Waveguides, Germanium, Silicon, Modulators, Optoelectronic devices, Capacitance, Diodes, Absorption

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PROCEEDINGS ARTICLE | May 12, 2012

Room temperature direct-gap electroluminescence in Ge/SiGe quantum well waveguides

Proc. SPIE. 8431, Silicon Photonics and Photonic Integrated Circuits III

KEYWORDS: Quantum wells, Waveguides, Polarization, Sensors, Germanium, Silicon, Polarizers, Electroluminescence, Diodes, Temperature metrology

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PROCEEDINGS ARTICLE | May 10, 2012

Ring resonator silicon optical modulator based on interleaved PN junctions

Proc. SPIE. 8431, Silicon Photonics and Photonic Integrated Circuits III

KEYWORDS: Refractive index, Modulation, Resonators, Waveguides, Polarization, Silicon, Doping, Modulators, Diodes, Optical modulators

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PROCEEDINGS ARTICLE | May 10, 2012

High-speed silicon optical modulator based on a PIPIN diode

Proc. SPIE. 8431, Silicon Photonics and Photonic Integrated Circuits III

KEYWORDS: Refractive index, Modulation, Waveguides, Electrodes, Silicon, Modulators, Diodes, Silicon photonics, Optical modulators, Phase shifts

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PROCEEDINGS ARTICLE | May 10, 2012

Carbon nanotube for photonics: light emission in silicon and optical gain

Proc. SPIE. 8431, Silicon Photonics and Photonic Integrated Circuits III

KEYWORDS: Semiconductors, Waveguides, Graphene, Luminescence, Silicon, Photonics, Silicon carbide, Single walled carbon nanotubes, Absorption, Carbon nanotubes

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PROCEEDINGS ARTICLE | May 9, 2012

40Gbit/s germanium waveguide photodetector on silicon

Proc. SPIE. 8431, Silicon Photonics and Photonic Integrated Circuits III

KEYWORDS: Photodetectors, Eye, Silica, Waveguides, Germanium, Silicon, Photodiodes, Epitaxy, Semiconducting wafers, PIN photodiodes

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PROCEEDINGS ARTICLE | May 1, 2012

Analytic design of chirped planar photonic crystals in the metamaterial regime

Proc. SPIE. 8423, Metamaterials VII

KEYWORDS: Metamaterials, Refractive index, Finite-difference time-domain method, Photonic metamaterials, Waveguides, Silicon, Photonic crystals, Geometrical optics, Structural design, Electromagnetism

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PROCEEDINGS ARTICLE | April 25, 2012

Experimental demonstration of light bending effect at optical wavelengths in a non-homogenizable graded photonic crystal

Proc. SPIE. 8425, Photonic Crystal Materials and Devices X

KEYWORDS: Electron beam lithography, Finite-difference time-domain method, Photonic metamaterials, Waveguides, Polarization, Dielectrics, Silicon, Photonic crystals, Wavelength tuning, Demultiplexers

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PROCEEDINGS ARTICLE | April 25, 2012

Slow light in slot photonic crystal waveguides by dispersion engineering

Proc. SPIE. 8425, Photonic Crystal Materials and Devices X

KEYWORDS: Slow light, Finite-difference time-domain method, Waveguides, Cladding, Dispersion, Polymers, Silicon, Photonic crystals, Nonlinear optics, Geometrical optics

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PROCEEDINGS ARTICLE | April 25, 2012

Diffraction-compensated dispersion-accumulated superprism based on two cascaded photonic crystals

Proc. SPIE. 8425, Photonic Crystal Materials and Devices X

KEYWORDS: Diffraction, Prisms, Finite-difference time-domain method, Waveguides, Dispersion, Interfaces, Photonic crystals, Refraction, Geometrical optics, Electromagnetism

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PROCEEDINGS ARTICLE | March 1, 2012

III-nitride intersubband photonics

Proc. SPIE. 8262, Gallium Nitride Materials and Devices VII

KEYWORDS: Quantum wells, Scattering, Sensors, Quantum cascade lasers, Gallium nitride, Photonics, Terahertz radiation, Aluminum nitride, Quantum chromodynamics, Absorption

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PROCEEDINGS ARTICLE | January 17, 2011

Silicon-based optical modulation within the HELIOS project

Proc. SPIE. 7943, Silicon Photonics VI

KEYWORDS: Modulation, Resonators, Waveguides, Silicon, Phase shift keying, Data transmission, Modulators, Diodes, Optical modulators, Tolerancing

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PROCEEDINGS ARTICLE | May 19, 2010

Photoluminescence enhancement of semiconducting-carbon-nanotubes-based thin films

Proc. SPIE. 7722, Organic Photonics IV

KEYWORDS: Semiconductors, Thin films, Photonic devices, Mirrors, Fabry–Perot interferometers, Polymers, Luminescence, Single walled carbon nanotubes, Absorption, Carbon nanotubes

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PROCEEDINGS ARTICLE | May 18, 2010

HELIOS: photonics electronics functional integration on CMOS

Proc. SPIE. 7719, Silicon Photonics and Photonic Integrated Circuits II

KEYWORDS: Electronics, Waveguides, Polarization, Germanium, Silicon, Modulators, Photonics, Microelectronics, Silicon photonics, Semiconducting wafers

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PROCEEDINGS ARTICLE | May 18, 2010

A 10Gb/s transimpedance amplifier for hybrid integration of a Ge PIN waveguide photodiode

Proc. SPIE. 7719, Silicon Photonics and Photonic Integrated Circuits II

KEYWORDS: Photodetectors, Optical amplifiers, Germanium, Amplifiers, Photodiodes, Receivers, Capacitance, Photonics, Transistors, Semiconducting wafers

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The presented paper describes a 10 Gbps optical receiver. The transimpedance amplifier (TIA) is realized in standard 0.35 μm SiGe BiCMOS technology. The main novelty of the presented design - investigated in the European Community project HELIOS - is the hybrid connection of the optical detector. The used Germanium photodetector will be directly mounted onto the receiver. A model of the relevant parasitics of the photodetector itself and the novel connection elements (micropads, metal vias and metal lines) is described. Based on this photodetector model an optical receiver circuit was optimized for maximum sensitivity at data rates in the range of 10 Gbps. The design combines a TIA and two limiting amplifier stages followed by a 50 Ω CML-style logic-level output driver. To minimize power supply noise and substrate noise, a fully differential design is used. A dummy TIA provides a symmetrical input signal reference and a control loop is used to compensate the offset levels. The TIA is built around a common-emitter stage and features a feedback resistor of 4.2 Ω. The total transimpedance of the complete receiver chain is in the range of 275 kΩ. The value of the active feedback resistor can be reduced via an external control voltage to adapt the design to different overall gain requirements. The two limiting amplifier stages are realized as differential amplifiers with voltage followers. The output buffer is implemented with cascode differential amplifiers. The output buffer is capable of driving a differential 50Ω output with a calculated output swing of 800mVp-p. Simulations show an overall bandwidth of 7.2 GHz. The lower cutoff frequency is below 60 kHz. The equivalent input noise current is 408 nA. With an estimated total photodiode responsivity of 0.5 A/W this allows a sensitivity of around - 23.1 dBm (BER = 10-9). The device operates from a single 3.3 V power supply and the TIAs and the limiting amplifier consume 32 mA.

PROCEEDINGS ARTICLE | May 18, 2010

An optimization method for depletion-based silicon optical modulators

Proc. SPIE. 7719, Silicon Photonics and Photonic Integrated Circuits II

KEYWORDS: Refractive index, Optical design, Modulation, Waveguides, Silicon, Doping, Modulators, Diodes, Neodymium, Optical modulators

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PROCEEDINGS ARTICLE | May 17, 2010

High performance multichannel photonic biochip sensors for future point of care diagnostics: an overview on two EU-sponsored projects

Proc. SPIE. 7715, Biophotonics: Photonic Solutions for Better Health Care II

KEYWORDS: Refractive index, Proteins, Resonators, Waveguides, Sensors, Polymers, Silicon, Biosensors, Integrated optics, Optical alignment

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PROCEEDINGS ARTICLE | May 14, 2010

A new kind of semi-slow light photonic crystal waveguides with large delay-bandwidth product

Proc. SPIE. 7713, Photonic Crystal Materials and Devices IX

KEYWORDS: Slow light, Biomedical optics, Waveguides, Dispersion, Silicon, Photonic crystals, Control systems, Optoelectronics, Nonlinear optics, Optical interconnects

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PROCEEDINGS ARTICLE | May 14, 2010

A superprism-based photonic crystal demultiplexer in nearly-perfect collimation conditions

Proc. SPIE. 7713, Photonic Crystal Materials and Devices IX

KEYWORDS: Diffraction, Surface plasmons, Waveguides, Dispersion, Interfaces, Silicon, Photonic crystals, Refraction, Collimation, Demultiplexers

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PROCEEDINGS ARTICLE | May 13, 2010

Carrier depletion based silicon optical modulators

Proc. SPIE. 7719, Silicon Photonics and Photonic Integrated Circuits II

KEYWORDS: Refractive index, Phase modulation, Modulation, Waveguides, Silicon, Modulators, Diodes, Integrated optics, Silicon photonics, Optical modulators

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SPIE Conference Volume | May 12, 2010

Silicon Photonics and Photonic Integrated Circuits II

PROCEEDINGS ARTICLE | February 26, 2010

Optical microresonator for application to an opto-electronic oscillator

Proc. SPIE. 7598, Optical Components and Materials VII

KEYWORDS: Optical filters, Refractive index, Microresonators, Oscillators, Resonators, Waveguides, Silicon, Structured optical fibers, Optoelectronics, Optical resonators

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PROCEEDINGS ARTICLE | February 17, 2010

High speed silicon optical modulator

Proc. SPIE. 7606, Silicon Photonics V

KEYWORDS: Refractive index, Modulation, Waveguides, Electrodes, Silicon, Modulators, Diodes, Optical modulators, PIN photodiodes, Phase shifts

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PROCEEDINGS ARTICLE | February 17, 2010

Modulators and photodetectors developed in the framework of the European HELIOS project

Proc. SPIE. 7606, Silicon Photonics V

KEYWORDS: Photodetectors, Waveguides, Sensors, Germanium, Silicon, Modulators, Photonics, Silicon photonics, Optical modulators, Absorption

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PROCEEDINGS ARTICLE | January 23, 2010

Growth of intersubband GaN/AlGaN heterostructures

Proc. SPIE. 7608, Quantum Sensing and Nanophotonic Devices VII

KEYWORDS: Quantum wells, Modulation, Interfaces, Modulators, Gallium nitride, Telecommunications, Aluminum nitride, Electro optics, Temperature metrology, Absorption

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SPIE Journal Paper | July 1, 2009

Efficient band-edge light injection in two-dimensional planar photonic crystals using a gradual interface

Bernier, Damien , Cassan, Eric , Le Roux, Xavier , Marris-Morini, Delphine , Vivien, Laurent

OE Vol. 48 Issue 07

KEYWORDS: Interfaces, Waveguides, Photonic crystals, Scanning electron microscopy, Transmittance, Silicon, Photoresist processing, Cladding, Dispersion, Visible radiation

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PROCEEDINGS ARTICLE | May 20, 2009

Ge-on-silicon waveguide photodetectors for optical telecommunications

Proc. SPIE. 7366, Photonic Materials, Devices, and Applications III

KEYWORDS: Photodetectors, Waveguides, Sensors, Germanium, Silicon, Telecommunications, Integrated optics, Reactive ion etching, PIN photodiodes, Absorption

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PROCEEDINGS ARTICLE | May 20, 2009

8 Gb/s 0.5 V integrated Ge-on-SOI photodetector

Proc. SPIE. 7366, Photonic Materials, Devices, and Applications III

KEYWORDS: Photodetectors, Eye, External quantum efficiency, Germanium, Ions, Silicon, Optical communications, Diodes, Integrated optics, Plasma

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PROCEEDINGS ARTICLE | February 18, 2009

Ge-on-silicon vertical PIN photodetectors

Proc. SPIE. 7220, Silicon Photonics IV

KEYWORDS: Photodetectors, Waveguides, Metals, Annealing, Germanium, Silicon, Integrated optics, Reactive ion etching, PIN photodiodes, Absorption

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SPIE Journal Paper | January 1, 2009

Light coupling and distribution for Si3N4/SiO2 integrated multichannel single-mode sensing system

Kazmierczak, Andrzej , Dortu, Fabian , Schrevens, Olivier , Giannone, Domenico , Vivien, Laurent , Marris-Morini, Delphine , Bouville, David , Cassan, Eric , Gylfason, Kristin , Sohlström, Hans , Sanchez, Benito , Griol, Amadeu , Hill, Daniel

OE Vol. 48 Issue 01

KEYWORDS: Sensors, Brain-machine interfaces, Waveguides, Silicon, Tolerancing, Photonics, Signal attenuation, Resonators, Integrated optics, Optical alignment

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SPIE Conference Volume | May 29, 2008

Silicon Photonics and Photonic Integrated Circuits

PROCEEDINGS ARTICLE | May 1, 2008

Carrier-depletion-based optical modulator integrated in a lateral structure in a SOI waveguide

Proc. SPIE. 6996, Silicon Photonics and Photonic Integrated Circuits

KEYWORDS: Mach-Zehnder interferometers, Modulation, Waveguides, Silicon, Modulators, Capacitance, Diodes, Optical modulators, PIN photodiodes, Phase shifts

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PROCEEDINGS ARTICLE | February 26, 2008

Ge photodetectors integrated in Si waveguides

Proc. SPIE. 6898, Silicon Photonics III

KEYWORDS: Photodetectors, Waveguides, Electrodes, Germanium, Silicon, Photonics, Integration, Integrated optics, Picosecond phenomena, Absorption

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SPIE Journal Paper | January 1, 2008

Ultracompact tapers for light coupling into two-dimensional slab photonic-crystal waveguides in the slow light regime

Marris-Morini, Delphine , Cassan, Eric , Bernier, Damien , Maire, Guillaume , Vivien, Laurent

OE Vol. 47 Issue 01

KEYWORDS: Waveguides, Slow light, Sensors, Dispersion, Finite-difference time-domain method, Silicon, Optical engineering, Photonic crystals, Integrated optics, Refractive index

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SPIE Journal Paper | July 1, 2007

Design of photonic crystal directional couplers for electro-optical wavelength switching in Si technology

Cassan, Eric , Bernier, Damien , Marris-Morini, Delphine , Maire, Guillaume , Vivien, Laurent

JNP Vol. 1 Issue 01

KEYWORDS: Waveguides, Directional couplers, Dispersion, Silicon, Electro optics, Switches, Refractive index, Photonic crystals, Switching, Finite-difference time-domain method

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PROCEEDINGS ARTICLE | February 14, 2007

Germanium on silicon photodetectors for telecom wavelengths

Proc. SPIE. 6477, Silicon Photonics II

KEYWORDS: Photodetectors, Electrodes, Germanium, Silicon, Doping, Photodiodes, Scanning electron microscopy, Capacitance, PIN photodiodes, Absorption

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PROCEEDINGS ARTICLE | April 20, 2006

Design optimization of SiGe/Si: modulation-doped multiple quantum well modulator for high-speed operation

Proc. SPIE. 6183, Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits

KEYWORDS: Refractive index, Quantum wells, Modulation, Resonators, Waveguides, Silicon, Doping, Modulators, PIN photodiodes, Absorption

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PROCEEDINGS ARTICLE | April 18, 2006

Silicon-on-insulator microphotonic devices

Proc. SPIE. 6182, Photonic Crystal Materials and Devices III (i.e. V)

KEYWORDS: Photodetectors, Mirrors, Waveguides, Etching, Germanium, Silicon, Modulators, Silicon films, Integrated optics, Geometrical optics

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PROCEEDINGS ARTICLE | March 1, 2006

Integration issues of a photonic layer on top of a CMOS circuit

Proc. SPIE. 6125, Silicon Photonics

KEYWORDS: Wafer-level optics, Photodetectors, Silica, Waveguides, Germanium, Silicon, Integrated optics, CMOS technology, Semiconducting wafers, Wafer bonding

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SPIE Journal Paper | October 1, 2005

Comparison between electrical and optical global clock distributions for CMOS integrated circuits

Cassan, Eric , Marris-Morini, Delphine , Rouvière, Mathieu , Vivien, Laurent , Laval, Suzanne

OE Vol. 44 Issue 10

KEYWORDS: Clocks, Germanium, Receivers, Sensors, Silicon, Transistors, Integrated optics, Waveguides, Photodetectors, Molybdenum

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SPIE Journal Paper | August 1, 2005

Design of a modulation-doped SiGe/Si optical modulator integrated in a submicrometer silicon-on-insulator waveguide

Marris, Delphine , Cassan, Eric , Vivien, Laurent , Pascal, Daniel , Koster, Alain , Laval, Suzanne

OE Vol. 44 Issue 08

KEYWORDS: Silicon, Modulation, Waveguides, Germanium, Modulators, Absorption, Optical modulators, Heterojunctions, Diodes, Refractive index

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SPIE Journal Paper | July 1, 2005

Integration of germanium waveguide photodetectors for intrachip optical interconnects

Rouviere, Mathieu , Halbwax, Mathieu , Cercus, Jean-Luc , Cassan, Eric , Vivien, Laurent , Pascal, Daniel , Heitzmann, Michel , Hartmann, Jean-Michel , Laval, Suzanne

OE Vol. 44 Issue 07

KEYWORDS: Germanium, Photodetectors, Waveguides, Absorption, Silicon, Optical interconnects, Microelectronics, Quantum wells, Optical engineering, Electrodes

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PROCEEDINGS ARTICLE | September 8, 2004

Comparison between electrical and optical clock distribution for CMOS integrated circuits

Proc. SPIE. 5453, Micro-Optics, VCSELs, and Photonic Interconnects

KEYWORDS: Clocks, Waveguides, Sensors, Germanium, Silicon, Receivers, Capacitance, Transistors, Picosecond phenomena, Optical interconnects

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PROCEEDINGS ARTICLE | September 8, 2004

Integration of germanium waveguide photodetectors for optical intra-chip interconnects

Proc. SPIE. 5453, Micro-Optics, VCSELs, and Photonic Interconnects

KEYWORDS: Photodetectors, Waveguides, Sensors, Germanium, Silicon, Capacitance, Microelectronics, Integrated optics, Optical interconnects, Absorption

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PROCEEDINGS ARTICLE | September 8, 2004

Design of a SiGe/Si quantum well optical modulator integrated in a silicon-on-insulator waveguide for optical interconnect systems

Proc. SPIE. 5453, Micro-Optics, VCSELs, and Photonic Interconnects

KEYWORDS: Refractive index, Quantum wells, Modulation, Waveguides, Germanium, Silicon, Doping, Modulators, Optical modulators, Absorption

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PROCEEDINGS ARTICLE | November 3, 2003

Broadband optical limiting optimization by combination of carbon nanotubes and two-photon absorbing chromophores in liquids

Proc. SPIE. 5211, Nonlinear Optical Transmission and Multiphoton Processes in Organics

KEYWORDS: Carbon, Scattering, Composites, Chromophores, Nonlinear optics, Transmittance, Optical limiting, Single walled carbon nanotubes, Absorption, Carbon nanotubes

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