Lawrence Lane
Director of Applications at Tokyo Electron America Inc
SPIE Involvement:
Author
Publications (6)

Proceedings Article | 5 April 2007
Proc. SPIE. 6518, Metrology, Inspection, and Process Control for Microlithography XXI
KEYWORDS: Thin films, Lithography, Metrology, Roentgenium, Error analysis, Scanning electron microscopy, Process control, Deposition processes, Critical dimension metrology, Semiconducting wafers

Proceedings Article | 5 April 2007
Proc. SPIE. 6518, Metrology, Inspection, and Process Control for Microlithography XXI
KEYWORDS: Lithography, Metrology, Scanners, Control systems, Scatterometry, Time metrology, Process control, Critical dimension metrology, Semiconducting wafers, Yield improvement

Proceedings Article | 10 May 2005
Proc. SPIE. 5752, Metrology, Inspection, and Process Control for Microlithography XIX
KEYWORDS: Lithography, Metrology, Logic, Data modeling, Spectroscopy, Reflectivity, Scatterometry, Reflectometry, Reflectance spectroscopy, Critical dimension metrology

Proceedings Article | 24 May 2004
Proc. SPIE. 5375, Metrology, Inspection, and Process Control for Microlithography XVIII
KEYWORDS: Optical filters, Metrology, Ultraviolet radiation, Silicon, Reflectivity, Photoresist materials, Scatterometry, Process control, Critical dimension metrology, Semiconducting wafers

Proceedings Article | 24 May 2004
Proc. SPIE. 5375, Metrology, Inspection, and Process Control for Microlithography XVIII
KEYWORDS: Wafer-level optics, Semiconductors, Metrology, Cadmium, Scatterometry, Process control, Finite element methods, Integrated optics, Critical dimension metrology, Semiconducting wafers

Proceedings Article | 15 July 2003
Proc. SPIE. 5041, Process and Materials Characterization and Diagnostics in IC Manufacturing
KEYWORDS: Metrology, Metals, Particles, Control systems, Scanning electron microscopy, Time metrology, Process control, Critical dimension metrology, Semiconducting wafers, Tin

Showing 5 of 6 publications
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