The increased performance and versatility of epitaxially grown III-V Type II strained layer superlattice (T2SLS) materials led to disruption of the IR sensor industry over the last decade. Increased performance at reduced cost are highly attractive to many end customers. Access to this detector material combined with the L3Harris front-side illuminated FPA structure lend to mechanically robust FPAs with array size only limited by source detector wafer size. This paper will present an overview of the technology development at L3Harris and the progress that has been made introducing SLS material into high operating temperature (HOT) MWIR sensors, LWIR sensors and dual-band (MW/MW & MW/LW) sensors.
L3Harris continues to develop, improve and transition HOT MWIR Type II Superlattice (T2SL) technology that was initially developed through the tri-service Vital Infrared Sensor Technology Acceleration (VISTA) program. The T2SL material system provides the opportunity to generate tunable band gaps for creating lattice-matched heterojunction devices and are integral to suppressing sources of dark currents. The unique design of these heterojunction devices to reduce dark current mechanisms enables MWIR FPAs to operate at higher temperatures with increased system level reliability. The evolution of T2SL MWIR detectors at L3Harris in Mason, Ohio has resulted multiple breakthroughs for both technology and manufacturability.
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