Microcrystalline silicon (μc-Si) thin film transistors (TFTs) can be provided with higher mobility and stability
than a-Si and better uniformity than poly-Si TFTs, it would be more suitable to be applied in larger area
AMOLED. By using 2ωYAG laser annealing, crystalline μc-Si thin film on plastic substrate has been
investigated and the proper laser energy needed for crystallization has been indicated. It has been found that
the dehydrogenation process at 300~450 °C for a few of hours could be omitted by decreasing the H content
in the crystallization precursor, which is suitable for laser crystallization on plastic substrate. The crystalline
volume fraction (Xc) and the grain size of the resulted μc-Si could be adjusted by controlling the laser energy.
By this method, the μc-Si on plastic substrate with the Xc and the grain size are 85% (at the maximum) and
50nm respectively has been achieved.