We report on efficient mid-IR difference-frequency generation (DFG) at ~8 μm in orientation-patterned GaAs (OPGaAs), by mixing the signal and idler fields inside a nanosecond, singly-resonant, periodically-poled MgO-doped LiNbO3 optical parametric oscillator (OPO). The temperature and spectral acceptance bandwidths as well as the DFG output performance are compared for two OP-GaAs samples with different lengths. Temperature tuning of the DFG is studied by implementing a transversely chirped Volume Bragg Grating (VBG) as one of the OPO cavity mirrors for the signal wave. The maximum DFG average power amounts to 215 mW at 8.15 μm for a pulse repetition rate of 35 kHz. The corresponding overall optical conversion efficiency from 1 to 8 μm is ~1.1%.
Tm,Ho co-doped disordered calcium niobium gallium garnet (CNGG) crystals are investigated as a novel gain medium for mode-locked lasers near 2 μm. With a GaSb-based semiconductor saturable absorber mirror (SESAM) and chirped mirrors for dispersion compensation such a laser is mode-locked at a repetition rate of 89.3 MHz. For a 5% output coupler, a maximum average output power of 157 mW is obtained with a pulse duration of 170 fs (28-nm broad spectrum centered at 2.075 μm, leading to a time-bandwidth product of 0.331). With a 0.5% output coupler, 73-fs pulses are generated at 2.061 μm with a spectral width of 62 nm (time-bandwidth product of 0.320) and an average output power of 36 mW.
Mode-locked lasers emitting ultrashort pulses in the 2-μm spectral range at high (100-MHz) repetition rates offer unique opportunities for time-resolved molecular spectroscopy and are interesting as pump/seed sources for parametric frequency down-conversion and as seeders of ultrafast regenerative laser amplifiers. Passively mode-locked lasers based on Tm3+- and Ho3+-doped bulk solid-state materials have been under development for about a decade. In 2009 we demonstrated the first steady-state operation of such a Tm:KLu(WO4)2 laser using a single-walled carbon nanotube (SWCNT) saturable absorber (SA), generating 10-ps pulses at 1.95 μm. In 2012 this laser produced 141-fs pulses at 2.037 μm. More recently, the study of numerous active media with different SAs resulted in the generation of sub-100-fs (sub-10-optical-cycle) pulses. Materials with broad and smooth spectral gain profile were selected, naturally emitting above 2 μm to avoid water vapor absorption/dispersion effects, including anisotropic materials, strong crystal-field distortion in hosts that do not contain rare-earths, crystals with structural or compositional (i.e. mixed compounds) disorder that exhibit inhomogeneous line broadening, mixed laser ceramics, and Tm,Ho-codoping of ordered and disordered crystals and ceramics. A broad absorption band in semiconducting SWCNTs spans from 1.6 to 2.1-μm whereas the absorption of graphene extends into the mid-IR and scales for multilayers, increasing the modulation depth. Compared to GaSb-based semiconductor SA mirrors (SESAMs), the carbon nanostructures exhibit broader spectral response and can be fabricated by simpler and inexpensive techniques. Chirped mirrors were implemented for groupvelocity dispersion compensation, to generate the shortest pulses, down to 52 fs at 2.015 μm.
The exceptional power scalability of Yb lasers has enabled the development of pulsed optical parametric amplifiers (OPA’s) operating at the short-wave edge of the mid-IR (MIR) with average powers beyond 10 W simultaneously providing peak powers in excess of 1 GW. Further wavelength extension into the longer-wave MIR is enabled by novel wide-bandgap non-oxide nonlinear crystals that can be pumped directly at 1 μm without detrimental one- and twophoton absorption of pump radiation. Eliminating the usual difference frequency generation step in producing MIR pulses above 5 μm could potentially increase the conversion efficiency of parametric down-conversion devices and enable a significant boost in the attainable average and peak power. Despite their utmost importance, material properties related to ultrafast laser-induced damage in nonlinear crystals are rarely investigated in the corresponding laser parameter range. In order to help unravel the complicated interplay of photorefractive effects, thermal lensing, and selffocusing/ defocusing affecting the beam quality and catastrophic breakdown threshold in MIR OPA’s, we present the nonlinear index of refraction at 1 μm of KTiOAsO4, LiGaS2, and BaGa4S7. The reported data provide crucial design parameters for the development of high-average-power MIR OPA’s. As examples, (i) a 100-kHz, 1.55/3.1 μm dual-beam OPA delivering multi-GW peak power in each beam and a total average power of 55 W and (ii) a 100-kHz, sub-100-fs, 1-μm-pumped OPA tunable in the 5.7-10.5-μm range are briefly presented.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print format on
SPIE.org.