Use of selective emitters is an important step in increasing the efficiency of commercial crystalline Si solar cells, but
costs must be kept under control. Laser doping allows selective doping of precisely defined regions without the need for
process- and labor-intensive photolithography steps while maintaining or improving cell quality. Laser processing
parameters must be investigated to optimize doping and minimize defect generation and contact resistance to realize
optimal photovoltaic performance. Lasers are available in a wide range of wavelengths, pulse durations, fluences, and
energy distributions. Processing parameters must be selected with both performance and industrial feasibility in mind.