Highly position-controlled ZnO nanowire arrays are grown on a SiO2-mask-patterned GaN substrate by hydrothermal method. The morphology of ZnO nanowires (NWs) can be modulated, and a comprehensive study is conducted for the first time. The morphology relies on the nucleation process that can be adjusted by varying growth time and solution concentration. Spectral responsibility curve and electroluminescent characteristics (EL) are measured, which both present great ultraviolet (UV) photoelectric properties. Meanwhile, the position of ZnO NWs is highly controllable as designed and the morphology of NWs are largely consistent, which pave the way to fabricate the high performance device resulting from the interaction between light.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.