Prof. Lianghui Chen Profile

Prof. Lianghui Chen

Associate Professor at Institute of Semiconductors CAS

SPIE Involvement:

Conference Program Committee | Conference Chair | Symposium Committee | Author

Publications (41)

PROCEEDINGS ARTICLE | October 15, 2015

High-power and low-loss room temperature operation of 2.4μm GaInAsSb/AlGaAsSb type-I strained quantum-well laser diodes

Proc. SPIE. 9671, AOPC 2015: Advances in Laser Technology and Applications

KEYWORDS: Quantum wells, Continuous wave operation, Cladding, High power lasers, Gallium antimonide, Semiconductor lasers, Laser damage threshold, Semiconducting wafers, Internal quantum efficiency, Molecular beam epitaxy

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SPIE Journal Paper | January 1, 2011

Double plasmonic structure design for broadband absorption enhancement in molecular organic solar cells

Bai, Wenli , Gan, Qiaoqiang , Song, Guofeng , Chen, Lianghui , Kafafi, Zakya , Bartoli, Filbert

JPE Vol. 1 Issue 1

KEYWORDS: Absorption, Plasmonics, Nanostructures, Metals, Solar cells, Structural design, Organic photovoltaics, Solar energy, Thin films, Interfaces

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PROCEEDINGS ARTICLE | November 13, 2010

High brightness InAs/GaAs quantum dot tapered laser at 1.3 µm with high temperature stability

Proc. SPIE. 7844, Semiconductor Lasers and Applications IV

KEYWORDS: Optical filters, Waveguides, Laser development, Quantum dots, Semiconductor lasers, Thermal effects, Laser stabilization, Laser damage threshold, Semiconducting wafers, Temperature metrology

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PROCEEDINGS ARTICLE | November 18, 2008

Highly stable white light from ultraviolet laser diode

Proc. SPIE. 7135, Optoelectronic Materials and Devices III

KEYWORDS: Near ultraviolet, Light sources, Light emitting diodes, Ultraviolet radiation, Semiconductor lasers, Indium gallium nitride, Luminous efficacy, Temperature metrology, Light, Blue light emitting diodes

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PROCEEDINGS ARTICLE | March 11, 2008

Mode analysis of photonic crystal polarization beam splitter and its application in integrated circuits design

Proc. SPIE. 6984, Sixth International Conference on Thin Film Physics and Applications

KEYWORDS: Semiconductors, Beam splitters, Waveguides, Polarization, Photonic crystals, Integrated circuits, Photonic integrated circuits, Integrated circuit design, Light wave propagation, Integrated optical circuits

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PROCEEDINGS ARTICLE | March 11, 2008

Single dipole mode photonic crystal laser on InGaAsP/InP QW waveguide slab

Proc. SPIE. 6984, Sixth International Conference on Thin Film Physics and Applications

KEYWORDS: Semiconductors, Refractive index, Quantum wells, Waveguides, Dielectrics, Photonic crystals, Semiconductor lasers, Near field, Laser crystals, Optical microcavities

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PROCEEDINGS ARTICLE | March 11, 2008

The whispering gallery mode in photonic crystal ring cavity

Proc. SPIE. 6984, Sixth International Conference on Thin Film Physics and Applications

KEYWORDS: Semiconductors, Refractive index, Finite-difference time-domain method, Reflection, Magnetism, Photonic crystals, Photonic integrated circuits, Integrated circuit design, Integrated photonics, Optical microcavities

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SPIE Conference Volume | November 19, 2007

Semiconductor Lasers and Applications III

PROCEEDINGS ARTICLE | October 6, 2006

Direct wafer bonding technology employing vacuum-cavity pre-bonding

Proc. SPIE. 6352, Optoelectronic Materials and Devices

KEYWORDS: Semiconductors, Infrared imaging, Annealing, Interfaces, Gallium arsenide, Scanning electron microscopy, Image transmission, Semiconducting wafers, Wafer bonding, Protactinium

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SPIE Conference Volume | September 21, 2006

Advanced LEDs for Solid State Lighting

SPIE Journal Paper | March 1, 2006

High-power AlGaInP laser diodes with current-injection-free region near the laser facet

Xu, Yun , Li, Yuzhang , Gan, Qiaoqiang , Cao, Qing , Song, Guofeng , Guo, Liang , Chen, Lianghui

OE Vol. 45 Issue 03

KEYWORDS: Aluminium gallium indium phosphide, Semiconductor lasers, High power lasers, Optical engineering, Chemical vapor deposition, Metalorganic chemical vapor deposition, Quantum wells, Cladding, Continuous wave operation, Gallium

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PROCEEDINGS ARTICLE | December 6, 2005

High-output very small aperture laser and its near-field distribution properties

Proc. SPIE. 6020, Optoelectronic Materials and Devices for Optical Communications

KEYWORDS: Gold, Light sources, Data storage, Electrodes, Metals, Semiconductor lasers, Near field, Diodes, Fiber coatings, Near field optics

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PROCEEDINGS ARTICLE | December 3, 2005

Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method

Proc. SPIE. 6020, Optoelectronic Materials and Devices for Optical Communications

KEYWORDS: Aluminium gallium indium phosphide, Cladding, Ions, Doping, Mass spectrometry, Semiconductor lasers, Chemical analysis, Laser damage threshold, Metalorganic chemical vapor deposition, Temperature metrology

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PROCEEDINGS ARTICLE | January 31, 2005

Theoretical analysis of the bandgap for the intermixed GaInP/AlGaInP quantum wells

Proc. SPIE. 5624, Semiconductor and Organic Optoelectronic Materials and Devices

KEYWORDS: Semiconductors, Quantum wells, Chemical species, Interfaces, Diffusion, Optoelectronic devices, Solids, Aluminum, Gallium, Indium gallium phosphide

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PROCEEDINGS ARTICLE | January 31, 2005

Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation

Proc. SPIE. 5624, Semiconductor and Organic Optoelectronic Materials and Devices

KEYWORDS: Semiconductors, Quantum wells, Physics, Numerical simulations, Finite difference methods, Optoelectronic devices, Epitaxy, Digital video discs, Gallium, Indium gallium phosphide

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PROCEEDINGS ARTICLE | December 8, 2004

Liquid nitrogen flowrate alarm system for MBE

Proc. SPIE. 5774, Fifth International Conference on Thin Film Physics and Applications

KEYWORDS: Semiconductors, Lithium, Sun, Molecules, Nickel, Nitrogen, Temperature sensors, Software development, Temperature metrology, Liquids

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PROCEEDINGS ARTICLE | May 12, 2004

Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure

Proc. SPIE. 5280, Materials, Active Devices, and Optical Amplifiers

KEYWORDS: Refractive index, Aluminium gallium indium phosphide, Waveguides, Cladding, Semiconductor lasers, Finite difference methods, Aluminum, Epitaxy, Gallium, Near field optics

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PROCEEDINGS ARTICLE | October 9, 2000

Novel large-coupled optical cavity semiconductor lasers and multiactive region light-emitting diodes with high performance

Proc. SPIE. 4225, Optical Interconnects for Telecommunication and Data Communications

KEYWORDS: Quantum wells, Light emitting diodes, External quantum efficiency, Gallium arsenide, Quantum efficiency, Semiconductor lasers, Optical resonators, Laser optics, Luminous efficiency, Pulsed laser operation

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PROCEEDINGS ARTICLE | April 18, 2000

High-efficiency low-vertical-divergence-angle 980-nm Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers

Proc. SPIE. 3947, In-Plane Semiconductor Lasers IV

KEYWORDS: Quantum wells, Waveguides, Cladding, Quantum efficiency, Single mode fibers, Fiber lasers, Semiconductor lasers, Optical resonators, Laser optics, Internal quantum efficiency

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PROCEEDINGS ARTICLE | April 17, 2000

Native oxided AlAs current blocking layer for AlGaInP high-brightness light-emitting diodes

Proc. SPIE. 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV

KEYWORDS: Oxides, Light emitting diodes, Aluminium gallium indium phosphide, Optical properties, Gallium arsenide, Reliability, Lamps, Critical dimension metrology, Metalorganic chemical vapor deposition, Oxidation

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PROCEEDINGS ARTICLE | November 9, 1999

650-nm AlGaInP quantum well lasers for the application of DVD

Proc. SPIE. 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures

KEYWORDS: Quantum wells, Aluminium gallium indium phosphide, Waveguides, Cladding, Gallium arsenide, Semiconductor lasers, Laser damage threshold, Digital video discs, Heterojunctions, Indium gallium phosphide

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PROCEEDINGS ARTICLE | August 19, 1998

High-power 980-nm InGaAs/GaAs/AlGaAs window structure lasers fabricated by impurity-free vacancy diffusion