The high-density inductively coupled plasma etching technique was applied to HgCdTe, while using the RF-powered wafer electrode to provide low plasma energy. By using a CH4/H2/N2/Ar chemistry the HgCdTe etch profiles were studied as a function of mask selectivity, chamber pressure, gas ratio and ICP power. The etch rate was found to decrease as etch depth increasing. The LBIC and I-V measurements were employed to investigate the electrical damage of HgCdTe material caused by plasma bombardment.
Three dry etching processes using a high ion density inductively coupled plasma (ICP) system in fabrication of optoelectronic device have been briefly presented in this paper. Smooth etched surface, high rate and selectivity ICP InP etching using Cl2/CH4/N2 have been demonstrated first time in fabrications of semiconductor laser. Low damage CH4/H2 ICP InP sub-micron grating etching using SiNx mask can be used for SG-DBR tunable laser fabrication. Anisotropic Cl2/CH4/Ar ICP etching with vertical profile has been used for GaAs/AlGaAs DBR layers etching in vertical cavity surface emitting laser (VCSEL) fabrication. The etching characteristics have been investigated by conventional optical microscopy and scanning electron microscopy (SEM).
New processes using HBr chemistry have been developed for etching InP and related materials using photoresist as a
mask in a high ion density inductively coupled plasma system. An etch rate of above 1 micron/min, a selectivity of 14:1
with vertical profile, and smooth etched surface have been achieved. The effects of ICP power, table temperature,
chamber pressure and DC bias on etching rate, selectivity, etched profile and surface morphology will be discussed in
We successfully fabricated the angled strip DC-PBH style SLED devices by using low damage ICP dry etching technology. The mesa of DC-PBH SLED was formed by Cl2/N2 ICP dry etching process. The low DC bias (<100 eV) of ICP etching technology can reduce the damage caused by ordinary RIE technique and Cl2/N2 based process can get rid of chemical damage caused by CH4/H2. High out-put power SLED device was obtained by using low damage ICP dry etching, the out-put power is 2 mW at 100 mA inject current (CW) at 25°C. Through optimized the angle of the active strip and AR optical film design, the full width of the half maximum (FWHM) of the spectrum at 2 mW out-put power can reach 46.4nm and the ripple of the SLED spectrum is low down to 0.4 dB.