In this work, we have compared the Q-switched performance of single rod crystal to a newly developed distributed face cooling structure. This structure was made by surface activated bonding technology and allowed to combine transparent heatsink to a gain crystal at room temperature. The Sapphire and Nd3+:YAG crystal plates were combined in this fashion to produce eight crystal chip which was further used to obtain Q-switch pulses with Cr4+:YAG crystal as saturable absorber. Energy of 9 mJ and pulse duration of 815 ps were achieved. Although the energy obtained with single rod system was 10 mJ, the degradation of the beam prevents such crystal to be used in further applications. This is the first demonstration of distributed face cooling system outperformed conventionally single rod system.
A sub-nanosecond green laser with laser head sized 35 × 35 × 35 mm3 was developed from a giant pulsed microchip laser for laser processing on organic superconducting transistor with a flexible substrate. A composite monolithic Y3Al5O12 (YAG) /Nd:YAG/Cr4+:YAG/YAG crystal was designed for generating giant pulsed 1064 nm laser. A fibercoupled 30 W laser diode centered at 808 nm was used with pump pulse duration of 245 μs. The 532 nm green laser was obtained from a LiB3O5 (LBO) crystal with output energy of 150 μJ and pulse duration of 268 ps. The sub-nanosecond green laser is interesting for 2-D ablation patterns.
Acousto-optically Q-switched operation of a Ho:SSO laser is reported for the first time. An average power of 2.23 W was obtained at a pulse repetition frequency from 5 to 20 kHz, with a corresponding to optical-to-optical conversion efficiency of 14.4% and a slope efficiency of 20%. The highest energy per pulse of 0.44 mJ in 28 ns was achieved at 2112 nm with a repetition rate of 5 kHz and peak power of 15 kW. The lifetime of Ho3+ in the Sc2SiO5 crystal host was also measured.
A reflective graphene saturable absorber mirror (SAM) was successfully fabricated by chemical vapor deposition technology. A stable diode-pumped passively mode-locked Yb3+:Sc2SiO5 laser using a graphene SAM as a saturable absorber was accomplished for the first time. The measured average output power amounts to 351 mW under the absorbed pump power of 12.5 W. Without prisms compensating for dispersion, the minimum pulse duration of 7 ps with a repetition rate of 97 MHz has been obtained at the central wavelength of 1063 nm. The corresponding peak power and the maximum pulse energy were 516 W and 3.6 nJ, respectively.
Blue laser based on Neodymium doped strontium lanthanum magnesium aluminoxide
(Sr1-xLax-yNdyMgxAl12-xO19) single crystal were constructed by second harmonic generation. Output power of
1.72 W at 900nm was obtained under 792nm laser diode pump. Intra cavity second harmonic generation were performed
with non linear crystal LBO leading to output power of 76.6 mW at 450nm with absorbed power of 13.7 W and average
absorption efficiency of 61% in Nd:ASL crystal.
We present first experimental investigations on Ytterbium-doped Sc2SiO5 as a promising gain medium for thin-disk
lasers. This oxyorthosilicate laser material combines good thermo-mechanical properties and a broad emission
bandwidth suitable for high-power cw and mode-locked laser operation. The demonstrated average output powers of up
to 75 W with a not yet optimized thin-disk crystal confirm the power capability of this new material and preliminary tests
on passive mode-locking indicate the high potential for future ultrafast thin-disk laser oscillators.
Efficient diode-pumped Yb:LuY2SiO5 laser mode locked by single walled carbon nanotube saturable absorber is reported for the first time. Under the absorbed pump power of 12.83 W, continuous wave mode-locked pulses were generated with the maximum average output power of 1.50 W. We obtained pulses as short as 5.2 ps around a center wavelength of 1058.6 nm. The peak power and the single pulse energy of the mode-locked laser were up to 2.9 kW and 15.0 nJ, respectively.
Diode-pumped soliton and non-soliton mode-locked Yb:(Gd1-xYx) 2SiO5 (x=0.5) lasers have been demonstrated together
for the first time to the author's knowledge. For the non-soliton mode locking, output power could achieve ~1.2 W, and
pulse width was about 20ps. For the soliton mode-locked operation, the pulse width was 1.4ps at the wavelength of
1056nm and 375fs at the wavelength of 1042nm, with a pair of SF10 prisms as the negative dispersion elements. The
repetition rate was 48 MHz. The critical pulse energy in the soliton-mode locked operation against the Q-switched mode
locking was much lower than the value in non-soliton mode-locked operation.
We reports on a diode-pumped passively mode-locked Yb:SSO laser with a SESAM. Pulses
duration as short as ~2 ps with a repetition rate of 53 MHz were generated. The output power
achieved ~1.9 W at a pump power of 11.5 W.