PROCEEDINGS ARTICLE | February 17, 2011
Proc. SPIE. 7953, Novel In-Plane Semiconductor Lasers X
KEYWORDS: Refractive index, Mirrors, Indium arsenide, Laser development, Gallium antimonide, Semiconductor lasers, Optical pumping, Laser optics, Temperature metrology, Absorption
The optical pumping injection cavity (OPIC) laser concept was developed to enhance the efficiency of optical pump
beam absorption, and this work focuses on epitaxial configurations designed for broadband absorption around 1850 nm,
an optimal pump wavelength for transmission through GaSb substrates that allows for epi-down mounting for improved
heat management, while minimizing the photon decrement. The OPIC devices presented in this work have
InAs/GaSb/InAs/AlSb type-II W active regions with a thicker GaSb/AlAsSb distributed Bragg reflector on top in order
to enhance reflection back into the active region for epi-down mounting. Results are presented for optical pumping at
1850 nm as well as for resonant optical pumping, as the cavity resonance varies with temperature due to shifts in lattice
constant, refractive index, and gain. Pumping at 1850 nm resulted in lasing from 78 K up through 310 K. At 78 K, the
actual pump cavity resonance is ~1840 nm, and with increasing temperature the resonance shifts to longer wavelengths
beyond 1850 nm. Emission wavelengths range from 3.59 μm at 78 K to 4.01 μm at 310 K for 1850 nm optical pumping.
The broadened OPIC configuration presents a distinct advantage over earlier reported OPIC devices as the broader
resonance allows for efficient emission across a wide temperature range for a single pump wavelength (e.g., 1850 nm),
providing over 400 nm of wavelength tuning. Results will be compared with a second broadened OPIC with emission
wavelengths beyond 4 μm that temperature tunes across the carbon dioxide spectral line at 4.2 μm.
