We experimentally demonstrate wavelength-tunable Self-Mode-Locking (SML) operation generated in an Optically Pumped Semiconductor Disk Laser (OP-SDL) with a straight cavity. The operation is achieved by insetting an etalon into the cavity, and wavelength tuning range of 11 nm can be achieved by adjusting the angle of etalon. After aligning the cavity carefully, stable self-mode-locking is obtained when the pump power was beyond 5 W, and the pulse period of 0.99 ns agrees well with the round-trip time determined by the optical cavity length of 148 mm. Meanwhile, the RF spectrum reveals a clean peak at the fundamental repetition rate of 1.01 GHz and the signal-to-noise ratio of the RF spectrum reaches 60 dB during the whole tuning process, indicating the stability of the pulse was quite excellent. Finally, we obtained a wavelength tunable SML optically pumped semiconductor disk laser. The experimental results prove that under the condition of adding an etalon in the cavity, the OP-SDL could remain a stable operation in a wider wavelength tuning range. This research is helpful to the development of wavelength tunable self-mode-locking optically pumped semiconductor disk lasers and hopes to obtain practical applications in related fields.
We demonstrated a wavelength tunable mode-locked optically pumped semiconductor disk laser (OP-SDL) based on a SESAM. The wavelength tuning is achieved by incorporating an uncoated, 100 μm thick, fused silica etalon into the cavity of the laser, and the central wavelength of the pulse train varied from 972 nm to 977 nm. The average power of the mode-locked states measured at different wavelengths was about 80mW, meanwhile, the repetition rate was 1.2 GHz in the tuning process, and the signal-to-noise ratio of the radio frequency spectrum signal exceeds 50 dB, which illustrates that the laser can maintain a stable mode-locked state even the central wavelength varies greatly. In addition, we calculated the influence of etalon's related parameters on its transmittance. This research contributes to the development of wavelength-tunable mode-locked OP-SDLs and to gain practical applications in related fields.
The band structure of InGaAs strained quantum wells are investigated using 8×8 Luttinger-Kohn Hamiltonian including conduction band, heavy hole, light hole, spin-orbit splitting and strain effects. The energy dispersion curves of conduction band and valence band, the material gain spectra of TE and TM mode are given, respectively. The variation of peak gain with carrier density, temperature, well width, and Indium composition of InGaAs are calculated. The calculations show that the higher the In composition of InGaAs and the thicker the well, the longer the emitting wavelength are. The higher carrier density and higher In composition lead to the higher peak gain.
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