Packaging is an important part of high power diode laser (HPLD) development and has become one of the key factors affecting the performance of high power diode lasers. In the package structure of HPLD, the interface layer of die bonding has significant effects on the thermal behavior of high power diode laser packages and most degradations and failures in high power diode laser packages are directly related to the interface layer. In this work, the effects of interface layer on the performance of high power diode laser array were studied numerically by modeling and experimentally. Firstly, numerical simulations using finite element method (FEM) were conducted to analyze the effects of voids in the interface layer on the temperature rise in active region of diode laser array. The correlation between junction temperature rise and voids was analyzed. According to the numerical simulation results, it was found that the local temperature rise of active region originated from the voids in the solder layer will lead to wavelength shift of some emitters. Secondly, the effects of solder interface layer on the spectrum properties of high power diode laser array were studied. It showed that the spectrum shape of diode laser array appeared “right shoulder” or “multi-peaks”, which were related to the voids in the solder interface layer. Finally, “void-free” techniques were developed to minimize the voids in the solder interface layer and achieve high power diode lasers with better optical-electrical performances.
With the improvement of output power, efficiency and reliability, high power semiconductor lasers have been applied in more and more fields. In this paper, a conduction-cooled, high peak output power semiconductor laser array was studied and developed. The structure and operation parameters of G-Stack semiconductor laser array were designed and optimized using finite element method (FEM). A Quasi-continuous-wave (QCW) conduction-cooled G-Stack semiconductor laser array with a narrow spectrum width was fabricated successfully.
With the improvement of output power, efficiency and reliability, high power semiconductor lasers have been applied in more and more fields. In this paper, a conduction-cooled, high peak output power semiconductor laser array was studied and developed. The structure and operation parameters of G-Stack semiconductor laser array were designed and optimized using finite element method (FEM). A Quasi-continuous-wave (QCW) conduction-cooled G-Stack semiconductor laser array with a narrow spectrum width was fabricated successfully.
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