Prof. Lino Reggiani Profile

Prof. Lino Reggiani

at Univ degli Studi di Lecce

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Publications (8)

Proceedings Article | 25 May 2004 Paper

Noise in Schottky-barrier diodes: from static- to large-signal operation

Susana Perez, Pavel Shiktorov, Tomás González, Evjeni Starikov, Viktor Gruzinskis, Lino Reggiani, Luca Varani, J. Vaissiere

Proceedings Volume 5470, (2004) https://doi.org/10.1117/12.546666

KEYWORDS: Microchannel plates, Terahertz radiation, Capacitance, Signal to noise ratio, Monte Carlo methods, Interference (communication), Solids, Fourier transforms, Diodes, Resistance

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Proceedings Article | 25 May 2004 Paper

Fluctuations of complex networks: electrical properties of single-protein nanodevices

Cecilia Pennetta, Vladimir Akimov, Eleonora Alfinito, Lino Reggiani, Gabriel Gomila

Proceedings Volume 5472, (2004) https://doi.org/10.1117/12.547636

KEYWORDS: Receptors, Proteins, Solids, Chemical species, Electrodes, Stochastic processes, Nanostructures, Photons, Capacitors, Polarization

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Proceedings Article | 25 May 2004 Paper

Nonlocal effects and transfer fields for electronic noise in small devices

Luca Varani, Jean Vaissiere, Pavel Shiktorov, Evjeni Starikov, Viktor Gruzhinskis, Tomas Gonzalez, Javier Mateos, Daniel Pardo, Lino Reggiani

Proceedings Volume 5470, (2004) https://doi.org/10.1117/12.545597

KEYWORDS: Scattering, Correlation function, Picosecond phenomena, Diffusion, Gallium arsenide, Resistance, Atrial fibrillation, Semiconductors, Doping, Terahertz radiation

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Proceedings Article | 25 May 2004 Paper

Non-Gaussian resistance fluctuations in disordered materials

Cecilia Pennetta, Eleonora Alfinito, Lino Reggiani, Stefano Ruffo

Proceedings Volume 5471, (2004) https://doi.org/10.1117/12.546781

KEYWORDS: Resistance, Resistors, Electrical breakdown, Stochastic processes, Monte Carlo methods, Thin films, Systems modeling, Solids, Complex systems, Composites

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Proceedings Article | 12 May 2003 Paper

Microscopic investigation of large-signal noise in semiconductor materials and devices

Tomas Gonzalez, Susana Perez, Eugenij Starikov, Pavel Shiktorov, Viktoras Gruzinskis, Lino Reggiani, Luca Varani, Jean Claude Vaissiere

Proceedings Volume 5113, (2003) https://doi.org/10.1117/12.488959

KEYWORDS: Upconversion, Semiconductors, Gallium arsenide, Correlation function, Phonons, Interference (communication), Stochastic processes, Picosecond phenomena, Scattering, Terahertz radiation

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The investigation of noise in electronic devices operating under large-signal conditions is attracting increasing attention in recent years. Theoretical analyses on this subject are typically performed in the framework of the impedance field method, implemented under the drift-diffusion approximation. As an alternative, a more general microscopic approach including a more detailed physical description of the systems is mandatory. This work reviews recent results of Monte Carlo simulations of electronic noise in bulk materials and submicron semiconductor structures subject to high-frequency large-amplitude periodic electric fields or applied voltages/currents. The peculiarity of the noise analysis under large-signal operation is that velocity or current/voltage fluctuations appear simultaneously with the regular response of the nonlinear medium or device, so that the regular response and noise spectra are overlapped in the whole frequency range of interest. Here, various correlation functions of fluctuations, their instantaneous and integrated spectral densities, etc. are calculated under large-signal operation for compound semiconductors, such as GaAs, and InN, as well as for GaAs Schottky-barrrier diodes and n+nn+ structures. A comparison with the results obtained under stationary conditions is performed. Under these large-signal cyclostationary working conditions, when the system response becomes nonlinear, several modifications and anomalies appear in the noise spectra with respect to static stationary conditions. In particular, an increase of the low-frequency noise and a resonant-like enhancement of the spectra near the fundamental frequency (and eventually high-order harmonics) of the applied signal is observed under some specific conditions. These anomalies are interpreted as a manifestation of dynamical effects under sufficiently high frequency and amplitude of the applied signal. Similarities and differences of the noise resonant-like enhancement around the fundamental frequency with noise upconversion processes are discussed.

Proceedings Article | 8 May 2003 Paper

Shot noise enhancement and suppression in single- and multiple-barrier diodes

Lino Reggiani, Vladimir Aleshkin, Antanas Reklaitis

Proceedings Volume 5115, (2003) https://doi.org/10.1117/12.496962

KEYWORDS: Electrons, Particles, Diodes, Transparency, Scattering, Gallium arsenide, Positive feedback, Monte Carlo methods, Heterojunctions, Interfaces

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Proceedings Article | 10 April 2001 Paper

Monte Carlo simulation of small- and large-signal response operation of a GaN THz maser

Eugenijus Starikov, P. Shiktorov, Viktoras Gruzinskis, Lino Reggiani, L. Varani, J. Vaissiere, Jian Zhao

Proceedings Volume 4415, (2001) https://doi.org/10.1117/12.425491

KEYWORDS: Terahertz radiation, Gallium nitride, Monte Carlo methods, Microwave radiation, Phonons, Liquids, Nitrogen, Doping

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Proceedings Article | 19 October 1999 Paper

Monte Carlo simulator for x-ray spectra analysis of GaAs detectors

Adriano Cola, Lino Reggiani, Lorenzo Vasanelli

Proceedings Volume 3768, (1999) https://doi.org/10.1117/12.366604

KEYWORDS: Monte Carlo methods, Sensors, X-rays, Gallium arsenide, Electrons, X-ray detectors, Energy efficiency, Signal detection, Signal attenuation, Astatine

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Showing 5 of 8 publications

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