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Luanjing Li

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Proceedings Article | 19 October 2022 Paper

The logical performance comparison and research of new memristor models

Luanjing Li, Yukun Lian, Haoran Zong

Proceedings Volume 12294, 122941O (2022) https://doi.org/10.1117/12.2641213

KEYWORDS: Resistance, Mathematical modeling, Instrument modeling, Performance modeling, Switching, Logic, Semiconductors

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This paper presents the optimized memristor model based on the classical HP memristor model and the bipolar threshold behavior memristor model. This paper shows the mathematical modeling process of this optimized memristor model and the basic circuit principle of this optimized bipolar threshold behavior memristor model. The optimized bipolar threshold behavior memristor model is simulated by using OrCAD Pspice. We compared the optimized VTEAM memristor model with the classical HP memristor model in this paper and found the optimized bipolar threshold behavior memristor model has the superiority in switching characteristic and logical performance by the alternating voltage signal, which would be useful for new logical devices.

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