Mr. M. J. Kennedy Profile

M. J. Kennedy

at Univ of California Santa Barbara

SPIE Involvement:

Author

Publications (3)

Proceedings Article | 2 March 2020 Presentation + Paper

High-performance mode-locked lasers on silicon

Songtao Liu, Xinru Wu, Justin Norman, Daehwan Jung, Mario Dumont, Chen Shang, Yating Wan, M.J. Kennedy, Bozhang Dong, Dominik Auth, Stefan Breuer, Frédéric Grillot, Weng Chow, Arthur Gossard, John Bowers

Proceedings Volume 11274, 112741K (2020) https://doi.org/10.1117/12.2552224

KEYWORDS: Mode locking, Silicon, Semiconductor lasers, Wavelength division multiplexing, Signal to noise ratio, Quantum dots, Quantum wells, Single sideband modulation, Laser applications, Indium arsenide

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Proceedings Article | 26 February 2020 Presentation + Paper

Epitaxial integration of high-performance quantum-dot lasers on silicon

Justin Norman, Songtao Liu, Yating Wan, Zeyu Zhang, Chen Shang, Jennifer Selvidge, Mario Dumont, M. J. Kennedy, Daehwan Jung, Jianan Duan, Heming Huang, Robert Herrick, Frederic Grillot, Arthur Gossard, John Bowers

Proceedings Volume 11285, 1128504 (2020) https://doi.org/10.1117/12.2542912

KEYWORDS: Silicon, Semiconductor lasers, Quantum dots, Gallium arsenide, Silicon photonics, Laser applications, Reliability, Quantum wells, Quantum dot lasers, Crystals

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Proceedings Article | 18 September 2018 Presentation + Paper

High performance quantum dot lasers epitaxially integrated on Si

Justin Norman, Zeyu Zhang, Daehwan Jung, Yating Wan, M. J. Kennedy, Alfredo Torres, Robert Herrick, Arthur Gossard, John Bowers

Proceedings Volume 10771, 107710D (2018) https://doi.org/10.1117/12.2319627

KEYWORDS: Silicon, Transparency, Quantum dot lasers, Semiconductor lasers, Quantum dots, Absorption, Gallium arsenide, Gallium, Doping, Silicon photonics

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