ZnTe:V thin cermet films (containing 0 to 10wt% V in ZnTe matrix) were prepared onto glass substrate by e-beam evaporation in vacuum at ~10<sup>-6</sup> torr. The deposition rate of the films was at about 2.05 nms<sup>-1</sup>. The effects of various deposition conditions on the electrical and optical properties of the cermet films have been studied in detail. The structure analysis of the film was performed by X-ray diffraction technique and it was found that the films are amorphous in nature. The optical properties of both the as-deposited and annealed films were studied in the wavelength range 300<&lgr;<2500 nm, respectively. The special feature of transmittance spectra is that as the doping vanadium is increased to a concentration of 2.5wt% V, the transmittance value is increased in the entire visible & infra-red up to &lgr;=1600 nm and beyond that concentration value, the transmittance is decreased. Similar behavior has also been observed in annealed films. For both types of cermet sample, the values of Urbach tail, optical band gap, refractive index and dielectric constants were evaluated for different compositions and thicknesses, respectively. Evaluation of these parameters may help in view of their technological applications in selective surface as well as in optoelectronic devices.