Mr. Manas Ranjan Mantri Profile

Manas Ranjan Mantri

SPIE Involvement:

Author

He received the B.Tech. degree in Applied Electronics and
Instrumentation Engineering from the Biju Patnaik University of Technology, Rourkela,
India, in 2010, and the M.Tech. degree in Electronics and Communication Engineering
from Indian Institute of Technology Kharagpur, West Bengal, India, in 2015. He is
currently working towards the Ph.D. degree in the Department of Electrical Engineering,
Indian Institute of Technology Bombay, Mumbai, India. His current research interests
include chemical passivation, Gas sensing response of MBE grown III-V based surface
quantum dots, and their optoelectronic, structural, and electrical characterization

Proceedings Article | 10 October 2023 Poster + Paper

Investigation of strain profile and band-alignment study in InAs/GaAsSb quantum dot heterostructure with varying Sb content

Farheen Shamim Ahmed Sabiha, Ravindra Kumar, Raveesh Gourishetty, Rajib Saha, Manas Ranjan Mantri, Ajay Kumar, Subhananda Chakrabarti

Proceedings Volume 12687, 126870K (2023) https://doi.org/10.1117/12.2677306

KEYWORDS: Antimony, Heterojunctions, Quantum dots, Emission wavelengths, Quantum experiments, Photoluminescence, Indium arsenide, Gallium arsenide, Optoelectronic devices, Quantum numbers

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Proceedings Article | 10 October 2023 Poster + Paper

Analysis of optical properties and reduced stain estimation in InAs/InGaAsSb quantum dot heterostructure with the variation of growth rate

Rajib Saha, Farheen Shamim Ahmed Sabiha, Raveesh Gourishetty, Manas Ranjan Mantri, Ajay Kumar, Subhananda Chakrabarti

Proceedings Volume 12687, 126870J (2023) https://doi.org/10.1117/12.2677301

KEYWORDS: Heterojunctions, Quantum dots, Optical properties, Indium arsenide, Quantum dot emission, Gallium arsenide, Optoelectronics

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Proceedings Article | 5 October 2023 Poster + Paper

A theoretical study on strain and optical property of InAs SK quantum dot with varying capping in SK-SML coupled surface quantum dot heterostructure

Manas Ranjan Mantri, Debi Prasad Panda, Ravindra Kumar, Samishta Choudhary, Subhananda Chakrabarti

Proceedings Volume 12651, 126510B (2023) https://doi.org/10.1117/12.2677964

KEYWORDS: Heterojunctions, Quantum dots, Gallium, Gallium arsenide, Aluminum, Indium arsenide, Optical properties, Quantum numbers, Optical surfaces, Indium gallium arsenide

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Proceedings Article | 5 October 2023 Poster + Paper

In-situ tailoring of band alignment between strain-coupled surface and buried InAs/GaAs quantum dots for sensor applications

Manas Ranjan Mantri, Debi Prasad Panda, Rajib Saha, Subhananda Chakrabarti

Proceedings Volume 12651, 126510A (2023) https://doi.org/10.1117/12.2677942

KEYWORDS: Quantum dots, Indium arsenide, Gallium arsenide, Heterojunctions, Raman spectroscopy, Quantum sensors, Atomic force microscopy, Monolayers, Signal processing, Quantum numbers

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Proceedings Article | 26 September 2023 Poster + Paper

Surfactant free, easy, low-cost, and large scale hydrothermal synthesis and characterization of CZTS ink for photovoltaic utility

Nivedita Pandey, Sudheendra Prabhu, Deepak Punetha, M. Mantri, Subhananda Chakrabarti

Proceedings Volume 12668, 1266807 (2023) https://doi.org/10.1117/12.2677295

KEYWORDS: Photovoltaics, Scanning electron microscopy, FT-IR spectroscopy, X-ray diffraction, Spectroscopy, Solar energy, Solar cells, Photoluminescence

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Proceedings Article | 4 March 2022 Poster + Paper

A comparative study of single layer InAs SK, SML, and coupled SK-on-SML QDs heterostructure by incorporating InGaAsSb (Type-II) as capping layer

Samishta Choudhary, Ravindra Kumar, Manas Ranjan Mantri, Anindya Dutta, Subhananda Chakrabarti

Proceedings Volume 11995, 119950M (2022) https://doi.org/10.1117/12.2610172

KEYWORDS: Antimony, Gallium, Heterojunctions, Indium arsenide, Indium gallium arsenide antimonide, Quantum dots, Gallium arsenide, Strain analysis, Solar cells, Optoelectronics

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Proceedings Article | 21 August 2020 Poster + Paper

Enhanced performance of InAs/InGaAs dot-in-well heterostructure through varying capping thickness

Ajay Kumar, Saraswathy Venugopal, Debiprasad Panda, Manas Mantri, Arjun Mandal, Subhananda Chakrabarti

Proceedings Volume 11465, 114651I (2020) https://doi.org/10.1117/12.2569078

KEYWORDS: Indium gallium arsenide, Raman spectroscopy, Heterojunctions, Indium arsenide, Gallium arsenide, Quantum dots, Phonons, Optical properties, Luminescence

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Proceedings Article | 21 August 2020 Poster + Paper

Effect of vertical induced strain on growth kinetics of self-assembled epitaxially grown InAs surface quantum dots

Manas Mantri, Debiprasad Panda, Debabrata Das, Ravinder Kumar, Sanowar Alam Gazi, Subhananda Chakrabarti

Proceedings Volume 11465, 114651C (2020) https://doi.org/10.1117/12.2568847

KEYWORDS: Indium arsenide, Quantum dots, Gallium arsenide, Atomic force microscopy, Heterojunctions, Luminescence, Sensors

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Proceedings Article | 2 March 2020 Presentation + Paper

Impact of growth rate variabilities of quantum dots and capping layer on photoluminescence of epitaxially grown inAs quantum dots

Manas Ranjan Mantri, Debiprasad Panda, Sanowar Alam Gazi, Suryansh Dongre, Subhananda Chakrabarti

Proceedings Volume 11291, 1129105 (2020) https://doi.org/10.1117/12.2547134

KEYWORDS: Indium arsenide, Gallium arsenide, Quantum dots, Heterojunctions, Luminescence, Optical properties, Diffusion, Near infrared, Optoelectronic devices

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Proceedings Article | 9 September 2019 Paper

The enhancement in luminescence property of chemically passivated near surface quantum well and quantum dots

Debabrata Das, Manas Ranjan Mantri, Debiprasad Panda, Sritoma Paul, Shubham Mondal, Amol Pansare, Subhananda Chakrabarti

Proceedings Volume 11085, 110851O (2019) https://doi.org/10.1117/12.2530898

KEYWORDS: Quantum wells, Nanostructures, Heterojunctions, Gallium arsenide, Luminescence, Quantum dots, Sulfur, Gallium, Optical properties, Indium arsenide

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Proceedings Article | 9 September 2019 Paper

Optical and structural investigation of ex-situ passivated strain coupled InAs surface quantum dots

Debabrata Das, Manas Ranjan Mantri, Debiprasad Panda, Sritoma Paul, Shubham Mondal, Amol Pansare, Subhananda Chakrabarti

Proceedings Volume 11085, 110851N (2019) https://doi.org/10.1117/12.2530894

KEYWORDS: Indium arsenide, Quantum dots, Atomic force microscopy, Heterojunctions, Oxides, Sensors, Gallium arsenide, Luminescence, Etching

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