The aim of this paper is to describe the design and simulation of an optical waveguide for its potential integration with
an optical source based on silicon rich oxide (SRO), on a silicon substrate. SRO deposited by Low Pressure Chemical
Vapor Deposition (LPCVD) has emission of light in the visible range, and then our goal is to integrate this optical source
with an appropriate optical waveguide. In this sense, we describe the methodology followed for the design of the optical
waveguide able to transmit light emitted in the wavelength range from 400 to 800 nm. Due to its optical properties and
compatibility with silicon technology the core material selected for the waveguide is silicon nitride (Si3N4), surrounded by silicon oxide (SiO2). The optimal dimensions and geometry that reduces losses and confine the light into the core zone are obtained by simulation.
In this work, it is study thermoluminescent phenomena (TL) optically stimulated with UV radiation in Silicon Rich Oxide (SRO) nanostructured thin films. The experimental samples used were thin films of this composite deposited by Low Pressure Chemical Vapor Deposition (LPCVD) over a n-type silicon substrate, this samples were fabricated using different flow ratios of precursory gases silane and nitrous oxide R0=SiH4/N2O during the deposition and were given posterior thermal treatment which gave place to the formation of different sized nanoparticles, that are attributed to the luminescent activation mechanism in this material. The silicon excess was controlled by the ratio of the gases used in the deposition process and in this way SRO films with 12, 8 and 6% silicon excess were obtained. The glow-curves experimentally obtained were submitted to analysis using different models in order to obtain important thermoluminescent parameters. The luminescence spectra of SRO show two wavelength regions of emission; one in the blue part and one in the red part of the emission spectrum. The emission in the blue part is related to defects in the SiO lattice. About the origin of the red luminescence there is still a controversy. One model assumes that the red luminescence stems from Si nano particles and another model assumes that defects at the interface of SiO bulk with the Si nano particle are responsible for the red luminescence. Finally is intended to provide favorable conditions for the development of a UV dosimeter with this material.
Electroluminescent properties of thin silicon-rich oxide (SRO) films deposited by low pressure chemical vapor
deposition (LPCVD) were studied. The gas flow ratio Ro = N2O/SiH4 was changed to obtain different silicon
concentrations within the SRO films. After deposition, SRO films were thermally annealed at 1100ºC for 3h in N2
atmosphere in order to create silicon nanoparticles (Si-nps). Simple capacitive structures like Polysilicon/SRO/n-Si were
used for the study. These light emitting capacitors (LECs) show intense blue (~466) and red EL (~685) at room
temperature depending on the silicon excess within the SRO films. Electroluminescence in these LECs is obtained at
direct current (DC) at both forward and reverse bias conditions. Nevertheless, a stronger whole area EL is obtained when
devices are forwardly biased.
This work shows the design, fabrication, and optimization of a silicon sensor with an extended sensing range toward the UV region. The main characteristic of this detector is the enlargement of the common silicon detection range to the ultraviolet region (240 to 400 nm). The fabrication process of this detector is compatible with complementary metal oxide semiconductor (CMOS) silicon technology, which makes it cheaper than commercial UV detectors.
Silicon Rich Oxide (SRO) has luminescent properties that can be used in silicon optoelectronics devices. Nowadays the emission mechanisms are not completely understood, leading to a high potential field of research. The study of the SRO characteristics and its relation with the emission would provide information on the mechanism of radiation.
In this work the optical properties of SRO are studied. Photoluminescence (PL), transmittance and refractive index of silicon rich oxide films annealed at high temperature during different times have been obtained. PL spectra show a considerable emission of visible light with different thermal treatment times and have a wide wavelength spectrum from 400 to 600 nm (3.1-2 eV ) and 650 to 850 nm (1.9-1.45 eV). Absorption spectra were studied and the optical band gap was determined. It can be seen that the optical band gap determined from these spectra changes as the silicon excess varies. The refractive index of SRO films also augments with the excess of silicon, and with the thermal treatments time.
In this work a Silicon/Silicon Rich Oxide (SRO) Ultraviolet detector is designed, fabricated and characterized.
This device increases the silicon detection range to the ultraviolet region (200-300nm). Besides the fabrication
process of this detector is compatible with standard silicon technology that makes it cheaper than commercial UV