The paper presents the design, technology and parameters of a new .silicon detector for detection of electrons (below named as beta detector) developed at the Institute of Electron Technology (ITE). The detector will be used for research on transactinide elements at the GSI Helmholtzzentrum für Schwerionenforschung GmbH, Darmstadt (GSI). The detector consists of a monolithic 32-element array with an active area diameter of 90 mm and a thickness of 0.9 mm. The starting material is a high-resistivity ν silicon wafer (5 kΩcm resistivity). 32 planar p<sup>+</sup>-ν junctions are formed by boron diffusion on the top side of the wafer. On the bottom side, an n<sup>+</sup> region, which forms a common cathode, is formed on the entire surface by phosphorus diffusion.
The array is mounted on a special epoxy-glass laminate substrate, copper-clad on both sides. Two model detectors have been fabricated and studied. Very good electrical parameters have been achieved. For the first array, with supply voltage V<sub>R</sub> = 20 V, the minimum dark current was 8 nA, the maximum dark current 97.1 nA, and the average dark current 25.1 nA. For the second array, it was 11.5 nA, 378.8 nA and 40.0 nA respectively.
The paper presents the design, technology and parameters of a new, silicon 64-element linear photodiode array developed at the Institute of Electron Technology (ITE) for the detection of scintillations emitted by CsI scintillators (λ≈550 nm). The arrays are used in a device for examining the content of containers at border crossings under development at the National Centre for Nuclear Research. Two arrays connected with a scintillator block (128 CsI scintillators) form a 128-channel detection module. The array consists of 64 epiplanar photodiode structures (5.1 × 7.2 mm) and a 5.3 mm module. p+-ν-n+ photodiode structures are optimised for the detection of radiation of λ≈ 550 nm wavelength with no voltage applied (photovoltaic mode). The structures are mounted on an epoxy-glass laminate substrate, copper-clad on both sides, on which connections with a common anode and separate cathode leads are located. The photosensitive surface of photodiodes is covered with a special silicone gel, which protects photodiodes against the mechanical impact of scintillators
This article describes a study on the influence construction and technology on the time stability of neutron sensors
developed at the Institute of Electron Technology, and was prepared the need to eliminate the dark current growth in long-term
use, not associated with radiative exposures.
After analyzing the construction of detectors makes some changes to technological processes. To improve the assembly
technology changed the type of converter (hard wax is replaced with a soft petroleum jelly) and introduced the foam insert
to the casing of the sensor in order to avoid mechanical stresses in the structure. These stresses occur as a result of thermal
shrinkage of wax (almost abrupt change of state from liquid to crystalline phase), which caused the piezoelectric effect.
After conducting structural and technological changes detectors were long-term electric load.