PROCEEDINGS ARTICLE | June 12, 2003
Proc. SPIE. 5039, Advances in Resist Technology and Processing XX
KEYWORDS: Lithography, Optical lithography, Polymers, Image processing, Scanning electron microscopy, Photomasks, Photoresist processing, Semiconducting wafers, 193nm lithography, Resolution enhancement technologies
A chemical shrink technology, RELACS (Resolution Enhancement Lithography Assisted by Chemical Shrink), utilizes the cross linking reaction catalyzed by the acid component existing in a predefined resist pattern. This “RELACS” process is a hole shrinking procedure that includes simple coating, baking, and rinsing applied after conventional photolithography. Our target is realize of sub-70nm hole pattern formation by using new RELACS for ArF resist. At present, RELACS process is introduced to mass production of KrF lithography by using AZ R200 (Product name of Clariant) mainly. Then first of all we reported process performance of conventional RELACS material, AZ R200 with ArF resist. However AZ R200 does not show satisfactory shrinkage on ArF resist. Thereupon, we started on the development of new RELACS corresponding to ArF resist. As the result, we developed new RELACS material including Cross Linking Accelerator (CLA). It was found that CLA is able to improve reactivity of RELACS with ArF-resist. By using this new RELACS, It is Realized sub-70nm hole pattern formation with ArF-Ex lithography and It is able to Control of hole size by mixing bake (MB) temperature and additive ratio of CLA. Moreover this process was realized that thickness of shrunk hole is increased.
