Zinc oxide (ZnO) thin films were deposited on quartz, silicon, and polymer substrates by pulsed laser deposition (PLD)
technique at different oxygen partial pressures (0.007 mbar to 0.003 mbar). Polycrystalline ZnO films were obtained at
room temperature when the oxygen pressure was between 0.003 mbar and .007 mbar, above and below this pressure the
films were amorphous as indicated by the X-ray diffraction (XRD). ZnO films were deposited on Al2O3 (0001) at
different substrate temperatures varying from 400°C to 600°C and full width half maximum (FWHM) of XRD peak is
observed to decrease as substrate temperature increases. The optical band gaps of these films were nearly 3.3 eV. A
cylindrical Langmuir probe is used for the investigation of plasma plume arising from the ZnO target. The spatial and
temporal variations in electron density and electron temperature are studied. Optical emission spectroscopy is used to
identify the different ionic species in the plume. Strong emission lines of neutral Zn, Zn+ and neutral oxygen are observed. No electronically excited O+ cations are identified, which is in agreement with previous studies of ZnO plasma
β-In2S3 films were grown on glass and quartz substrates by the rapid heating of metallic indium films in H2S atmosphere. The effect of sulphurisation temperature and time on the growth of single phase In2S3 and its electrical and optical properties have been investigated. The influences of processing parameters on the electrical and optical properties have
been studied. The band gaps of In2S3 films were in the range 1.9 eV to 2.3eV. All the films exhibit n-type conductivity. The studies on temperature dependence of conductivity indicate a variable range hopping mechanism.
Zinc sulphide thin films were prepared by chemical bath deposition (CBD) and the properties of these films are compared with those deposited by Physical vapour deposition (PVD). The variation in the optical and electrical properties of the CBD grown ZnS films with the pH of the reaction mixture was investigated. The chemically deposited
ZnS films showed a wide band gap of 3.93eV and a transparency of more than 80% in the visible region. The lowest resistivity of ~104 Ωcm was obtained for the films prepared from a chemical bath of pH 10.6. The refractive index, extinction coefficient and the dielectric constants of CBD ZnS films are also reported.