As the traditional techniques used in optical photolithography at 193 nm are running out of steam and are becoming
prohibitively expensive, a new cost-effective, high power EUV (extreme ultra-violet) light source is needed to enable
high volume manufacturing (HVM) of ever shrinking semiconductor devices. XTREME technologies GmbH and EUVA
have jointly developed tin based LDP (Laser assisted Discharge Plasma) source systems during the last two years for the
integration of such sources into scanners of the latest and future generations. The goals of the consortium are 1) to solve
the wavelength gap - the growing gap between the printed critical dimensions (CD) driven by Moore's Law and the
printing capability of lithographic exposure tools constrained by the wavelength of the light source - and 2) to enable the
timely availability of EUV light sources for high volume manufacturing.
A first Beta EUV Source Collector Module (SoCoMo) containing a tin based laser assisted discharge plasma source is in
operation at XTREME technologies since September 2009. Alongside the power increase, the main focus of work
emphasizes on the improvement of uptime and reliability of the system leveraging years of experience with the Alpha
sources. Over the past period, a cumulated EUV dose of several hundreds of Mega Joules of EUV light has been
generated at the intermediate focus, capable to expose more than a hundred thousand wafers with the right dose stability
to create well-yielding transistors. During the last months, the entire system achieved an uptime - calculated according to
the SEMI standards - of up to 80 %. This new SoCoMo has been successfully integrated and tested with a pre-production
scanner and is now ready for first wafer exposures at a customer's site. In this paper we will emphasize what our
innovative concept is against old type of Xe DPP and we will present the recent status of this system like power level,
uptime and lifetime of components as well.
In the second part of the paper the EUV source developments for the HVM phase are described. The basic engineering
challenges are thermal scaling of the source and debris mitigation. Feasibility of the performance can be demonstrated by
experimental results after the implementation into the beta system. The feasibility of further efficiency improvement,
required for the HVM phase, will also be shown. The objectives of the HVM roadmap will be achieved through
evolutionary steps from the current Beta products.
For industrial EUV (extreme ultra-violet) lithography applications high power EUV light sources are needed at a central
wavelength of 13.5 nm. Philips Extreme UV GmbH, EUVA and XTREME technologies GmbH have jointly developed
tin DPP (Discharge Produced Plasma) source systems.
This paper focuses in the first part on the results achieved from the Alpha EUV sources in the field. After integration of
power upgrades in the past, now the focus is on reliability and uptime of the systems.
The second part of this paper deals with the Beta SoCoMo that can be used in the first pre-production scanner tools of the
lithography equipment makers. The performance will be shown in terms of power at Intermediate Focus, dose stability
and product reliability but also its reachable collector lifetime, the dominant factor for Cost of Operation.
In the third part of the paper the developments for the high volume manufacturing (HVM) phase are described. The basic
engineering challenges in thermal scaling of the source and in debris mitigation can be proven to be solvable in practice
based on the Beta implementation and related modeling calibrated with these designs. Further efficiency improvements
required for the HVM phase will also be shown based on experiments. The further HVM roadmap can thus be realized as
evolutionary steps from the Beta products.
The learning gained in previous developments for EUV Micro Exposure and Alpha Tools builds the basis for the EUVL
source development at XTREME technologies and Philips EUV. Field data available from operation of these tools are in
use for continuous improvements in core technology areas such as plasma generation and forming, component reliability,
debris mitigation and optical performance.
Results from integration and operation of alpha tool sources are presented in the areas power performance, component
lifetime and debris mitigation efficiency. The analysis results and simulation work of the realized EUV source concept
are discussed and innovative concepts for component and module improvements are introduced.
The technological limit for the Xenon based sources seems to be reached on alpha performance level. Therefore the next
EUV source generations are based on Tin to increase the efficiency and full performance of those sources. For the Betatool
and HVM source generations a joint development work between XTREME technologies and Philips EUV is
introduced. The related work is content of another presentation of this conference.
XTREME technologies and Philips EUV have provided the majority of available EUV sources based on Discharge Produced Plasma (DPP) technology worldwide since 2003. The fact that all existing prototype scanners make use of DPP sources and that further power scaling and debris mitigation upgrades are made according to plan clearly contributes to the maturity of this technology. We will present the latest status of our tin based DPP sources in the joint development work of XTREME technologies and Philips EUV. Demonstration experiments pave the way for this technology towards the HVM power level.
For industrial EUV (extreme ultra-violet) lithography applications high power extreme ultraviolet (EUV) light sources are needed at a central wavelength of 13.5 nm, targeting 32 nm node and below. Philips Extreme UV GmbH and XTREME technologies GmbH have developed DPP (Discharge Produced Plasma) Alpha tools which run in operation at several locations in the world. In this paper the status of the Alpha Sn-DPP tools as developed by Philips Extreme UV GmbH will be given. The Alpha DPP tools provide a good basis for the development and engineering of the Beta tools and in the future of the HVM tools. The first Beta source has been designed and first light has been produced. Engineering steps will folow to optimize this first generation Beta Sn-DPP source. HVM tools target EUV power levels from 200W to 500W in IF. In this paper we show that the power requried for HVM can be generated with Sn-DPP sources. Based on Alpha Sn-DPP sources we show that repetition frequency and generated EUV pulse energy is scalable up to power levels that match the HVM requirements.
Extreme ultraviolet lithography (EUVL) is the leading technology for patterning at the 32 nm technology node and be-yond. EUVL light at 13.5 nm is used to print circuits. This light is produced by heating fuel (Xe, Sn) in EUV sources to a very high temperature by using either magnetic compression or laser irradiation. Today EUV source power remains the number one concern for implementation of EUVL in high volume manufacturing. Over the last few years, much pro-gress has been made in EUV source performance and availability. Today, alpha level high power (~10 W) EUV sources have been integrated in alpha level EUVL scanners. Medium and low power EUV sources are used for in-house metrol-ogy and performance studies on EUV mask blanks, EUV masks, photoresists, and optical elements. These compact dis-charge sources with medium power in the range of 10-100 mW/sr/2% bandwidth and low power EUV tubes are being used by various R&D labs for development of mask, optics, and resists. Previously, development of EUVL was mostly located at beamlines; today, these low power EUV sources are instrumental in allowing in-house R&D projects. In this paper, the latest status of high power EUV sources, low and medium power metrology sources, and some of their appli-cations are described.