Mr. Marco Guévremont Profile

Marco Guévremont

Sr Product Manager

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Author

Publications (5)

Proceedings Article | 12 October 2012 Paper

Understanding and enabling laser processing of solar materials through temporal pulse control

M. Rekow, T. Panarello, Nicolas Falletto, Marco Guevremont

Proceedings Volume 8473, 847303 (2012) https://doi.org/10.1117/12.935059

KEYWORDS: Pulsed laser operation, Solar cells, Laser drilling, Transparent conductors, Silicon, Laser processing, Optical lithography, Beam shaping, Laser ablation, Semiconducting wafers

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Proceedings Article | 2 June 2003 Paper

Spectroscopic ellipsometry for lithography front-end level CD control: a complete analysis for production integration

David Herisson, DaniEle Neira, Cyril Fernand, Philippe Thony, Daniel Henry, Stephanie Kremer, Marco Polli, Marco Guevremont, Assim Elazami

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.485031

KEYWORDS: Single crystal X-ray diffraction, Critical dimension metrology, Lithography, Scanning electron microscopy, Scatterometry, Metrology, Spectroscopic ellipsometry, Electron microscopes, Process control, Semiconducting wafers

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Proceedings Article | 2 June 2003 Paper

Spectroscopic Ellipsometry based Scatterometry enabling 193nm Litho and Etch process control for the 110nm technology node and beyond

Thomas Hingst, Thomas Marschner, Manfred Moert, Jan Homilius, Marco Guevremont, John Hopkins, Assim Elazami

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.485011

KEYWORDS: Scatterometry, Semiconducting wafers, Single crystal X-ray diffraction, Photomasks, Critical dimension metrology, Process control, Scatter measurement, Scanning electron microscopy, Finite element methods, Spectroscopic ellipsometry

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Proceedings Article | 16 July 2002 Paper

Spectral scatterometry for 2D trench metrology of low-K dual-damascene interconnect

Vladimir Ukraintsev, Mak Kulkarni, Christopher Baum, Karen Kirmse, Marco Guevremont, Suresh Lakkapragada, Kamal Bhatia, Pedro Herrera, Umar Whitney

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473457

KEYWORDS: Scatterometry, Critical dimension metrology, Atomic force microscopy, Scanning electron microscopy, Transmission electron microscopy, Silicon, Metrology, Dielectrics, Reactive ion etching, Semiconducting wafers

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Proceedings Article | 22 August 2001 Paper

Implementation of spectroscopic critical dimension (SCD) (TM) for gate CD control and stepper characterization

John Allgair, David Benoit, Mark Drew, Robert Hershey, Lloyd Litt, Pedro Herrera, Umar Whitney, Marco Guevremont, Ady Levy, Suresh Lakkapragada

Proceedings Volume 4344, (2001) https://doi.org/10.1117/12.436771

KEYWORDS: Single crystal X-ray diffraction, Critical dimension metrology, Semiconducting wafers, Scanning electron microscopy, Process control, Spectroscopy, Spectroscopes, Metrology, Precision measurement, Control systems

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