Dr. Marco Mandurrino
SPIE Involvement:
Area of Expertise:
Solid State Physics , Computational Physics , Quantum Modeling , Particle Detectors , Optoelectronics , Electronic Devices Design
Profile Summary

Physicist and Engineer - specialist in solid state physics, quantum physics, computational physics and electronic devices - he worked at Politecnico di Torino (Italy) mainly focusing his activity on the study and modeling of quantum tunneling in semiconductor nanostructures and its correlation with crystal defects, especially for what concerns trap-assisted-tunneling (TAT) and band-to-band tunneling (BTBT) in nitride-based diodes and HgCdTe IR detectors. Presently he is involved as Post-Doctoral Research Fellow at INFN (the Italian National Institute for Nuclear Physics) in a project within the RD50 programme whose aim is to design and optimize new generations of radiation-resistant silicon particle detectors for ultra-fast timing measurements in the high luminosity-LHC (HL-LHC) at CERN.
Publications (3)

Proceedings Article | 8 March 2016 Paper
C. De Santi, M. Meneghini, M. La Grassa, N. Trivellin, B. Galler, R. Zeisel, B. Hahn, M. Goano, S. Dominici, M. Mandurrino, F. Bertazzi, G. Meneghesso, E. Zanoni
Proceedings Volume 9768, 97680D (2016) https://doi.org/10.1117/12.2210953
KEYWORDS: Light emitting diodes, Temperature metrology, Indium gallium nitride, Quantum wells, Signal processing, Quantum efficiency, Thermography, Indium, Electroluminescence, Spectroscopes, Electron beam lithography, Data modeling, Measurement devices, Thermal modeling, Phonons, Numerical simulations

Proceedings Article | 4 March 2016 Paper
Michele Goano, Francesco Bertazzi, Xiangyu Zhou, Marco Mandurrino, Stefano Dominici, Marco Vallone, Giovanni Ghione, Alberto Tibaldi, Marco Calciati, Pierluigi Debernardi, Fabrizio Dolcini, Fausto Rossi, Giovanni Verzellesi, Matteo Meneghini, Nicola Trivellin, Carlo De Santi, Enrico Zanoni, Enrico Bellotti
Proceedings Volume 9742, 974202 (2016) https://doi.org/10.1117/12.2216489
KEYWORDS: Light emitting diodes, Gallium nitride, Semiconductors, Internal quantum efficiency, Optoelectronics, Quantum physics, Computer simulations, Nanostructures, Quantum wells, Electrons, Quantum efficiency, Phonons, Scattering, Monte Carlo methods

Proceedings Article | 8 September 2015 Paper
M. Mandurrino, M. Goano, S. Dominici, M. Vallone, F. Bertazzi, G. Ghione, M. Bernabei, L. Rovati, G. Verzellesi, M. Meneghini, G. Meneghesso, E. Zanoni
Proceedings Volume 9571, 95710U (2015) https://doi.org/10.1117/12.2187443
KEYWORDS: Light emitting diodes, Silicon carbide, Silicon, Gallium nitride, Electro optical modeling, Phonons, Sapphire, Analytical research, Electron beam lithography, Diodes

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