Mr. Marek G. Chacinski Profile

Marek G. Chacinski

PhD Student at KTH Royal Institute of Technology

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Publications (4)

Proceedings Article | 4 March 2015

Vertical-cavity surface-emitting lasers enable high-density ultra-high bandwidth optical interconnects

N. Chitica, J. Carlsson, L.-G. Svenson, M. Chacinski

Proc. SPIE. 9381, Vertical-Cavity Surface-Emitting Lasers XIX

KEYWORDS: Wafer-level optics, Transceivers, Eye, Reliability, Vertical cavity surface emitting lasers, Optical interconnects, Semiconducting wafers, Active optics, Tellurium, Channel projecting optics

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Proceedings Article | 18 November 2008

InP-based monolithically integrated 1310/1550nm diplexer/triplexer

C. Silfvenius, M. Swillo, J. Claesson, E. Forsberg, N. Akram, M. Chacinski, L. Thylén

Proc. SPIE. 7135, Optoelectronic Materials and Devices III

KEYWORDS: Staring arrays, Refractive index, Optical amplifiers, Fiber to the x, Waveguides, Polarization, Interfaces, Photodiodes, Wavelength division multiplexing, Semiconductor lasers

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Multiple streams of high definition television (HDTV) and improved home-working infrastructure are currently driving forces for potential fiber to the home (FTTH) customers [1]. There is an interest to reduce the cost and physical size of the FTTH equipment. The current fabrication methods have reached a cost minimum. We have addressed the costchallenge by developing 1310/(1490)/1550nm bidirectional diplexers, by monolithic seamless integration of lasers, photodiodes and wavelength division multiplexing (WDM) couplers into one single InP-based device. A 250nm wide optical gain profile covers the spectrum from 1310 to 1550nm and is the principal building block. The device fabrication is basically based on the established configuration of using split-contacts on continuos waveguides. Optical and electrical cross-talks are further addressed by using a Y-configuration to physically separate the components from each other and avoid inline configurations such as when the incoming signal travels through the laser component or vice versa. By the eliminated butt-joint interfaces which can reflect light between components or be a current leakage path and by leaving optically absorbing (unpumped active) material to surround the components to absorb spontaneous emission and nonintentional reflections the devices are optically and electrically isolated from each other. Ridge waveguides (RWG) form the waveguides and which also maintain the absorbing material between them. The WDM functionality is designed for a large optical bandwidth complying with the wide spectral range in FTTH applications and also reducing the polarization dependence of the WDM-coupler. Lasing is achieved by forming facet-free, λ/4-shifted, DFB (distributed feedback laser) lasers emitting directly into the waveguide. The photodiodes are waveguide photo-diodes (WGPD). Our seamless technology is also able to array the single channel diplexers to 4 to 12 channel diplexer arrays with 250μm fiber port waveguide spacing to comply with fiber optic ribbons. This is an important feature in central office applications were small physical space is important.

Proceedings Article | 8 May 2008

Effects of detuned loading on the modulation performance of widely tunable MG-Y lasers

Marek Chaciński, Richard Schatz, Mats Isaksson, Olle Kjebon, Qin Wang

Proc. SPIE. 6997, Semiconductor Lasers and Laser Dynamics III

KEYWORDS: Reflectors, Mirrors, Tunable lasers, Modulation, Fiber Bragg gratings, Reflectivity, Phase shift keying, Frequency modulation, Fermium, Optical simulations

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Proceedings Article | 5 March 2008

Silicon optical bench for flip-chip integration of high speed widely tunable lasers

M. Chacinski, A. Scholes, R. Schatz, P. Ericsson, M. Isaksson, S. Hammerfeldt

Proc. SPIE. 7009, Second International Conference on Advanced Optoelectronics and Lasers

KEYWORDS: Gold, Tunable lasers, Modulation, Electrodes, Silicon, Resistance, Semiconductor lasers, Aluminum nitride, Optical benches, Microwave radiation

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