Prof. Marek Tlaczala Profile

Prof. Marek Tlaczala

at Wroclaw Univ of Science and Technology

SPIE Involvement:

Author

Publications (25)

Proceedings Article | 18 December 2018 Paper

Paper

Modification of angular photoresponse of InGaAsN-based photodiode with 3D woodpile structures

Lubos Suslik, Matej Goraus, Petra Urbancova, Beata Sciána, Wojciech Dawidowski, Marek Tłaczała

Proceedings Volume 10976, 109760X (2018) https://doi.org/10.1117/12.2518357

KEYWORDS: Photodiodes, Polymers, 3D metrology, Photoresist materials, Lithography, Diffraction, Photonics, Light emitting diodes, Scanning electron microscopy, Laser systems engineering

Read Abstract +

Proceedings Article | 30 May 2017 Paper

Paper

Polymer based 3D photonic crystals applied on the surface of LEDs and photodiodes

Dušan Pudiš, Matej Goraus, Marek Tłaczała, Peter Gašo, Jaroslav Kováč, Wojciech Dawidowski, Daniel Jandura, Ľuboš Šušlik, Jana Ďurišová, Ivana Lettrichová, Beata Ściana

Proceedings Volume 10249, 102490S (2017) https://doi.org/10.1117/12.2265759

KEYWORDS: Lithography, Polymers, Organic light emitting diodes, Nanotechnology, Photonics, Light emitting diodes, Photonic crystals, Photodiodes, Optical properties, Optical lithography, Photonic crystal devices

Read Abstract +

Proceedings Article | 25 July 2013 Paper

Paper

Characterisation of AP-MOVPE grown (Ga, In)(N, As) structures by Raman spectroscopy

Mikołaj Badura, Beata Ściana, Damian Radziewicz, Damian Pucicki, Katarzyna Bielak, Wojciech Dawidowski, Paulina Kamyczek, Ewa Płaczek-Popko, Marek Tłaczała

Proceedings Volume 8902, 89022Q (2013) https://doi.org/10.1117/12.2031297

KEYWORDS: Nitrogen, Raman spectroscopy, Gallium arsenide, Gallium, Phonons, Chemical species, Indium, Quantum wells, Visible radiation, Semiconductor materials

Read Abstract +

Proceedings Article | 25 July 2013 Paper

Paper

Characterizations of GaInNAs/GaAs quantum wells

Katarzyna Bielak, Damian Pucicki, Beata Ściana, Damian Radziewicz, Wojciech Dawidowski, Mikolaj Badura, Robert Kudrawiec, Jarosław Serafińczuk, Marek Tłaczała

Proceedings Volume 8902, 89022R (2013) https://doi.org/10.1117/12.2031298

KEYWORDS: Quantum wells, Nitrogen, Indium, Gallium arsenide, Heterojunctions, Crystals, Semiconductors, Optical testing, Luminescence, X-ray diffraction

Read Abstract +

Proceedings Article | 25 July 2013 Paper

Paper

Influence of rapid thermal annealing on optical properties of (In, Ga)(As, N)/GaAs quantum wells

Wojciech Dawidowski, Beata Ściana, Magdalena Latkowska, Damian Radziewicz, Damian Pucicki, Katarzyna Bielak, Mikołaj Badura, Marek Tłaczała

Proceedings Volume 8902, 89022G (2013) https://doi.org/10.1117/12.2031065

KEYWORDS: Quantum wells, Gallium arsenide, Annealing, Luminescence, Heterojunctions, Optical properties, Nitrogen, Chemical species, Indium, Indium gallium arsenide

Read Abstract +

Proceedings Article | 25 July 2013 Paper

Paper

Influence of the AP MOVPE process parameters on properties of (In, Ga)(As, N)/ GaAs heterostructures for photovoltaic applications

Beata Ściana, Damian Radziewicz, Damian Pucicki, Jarosław Serafińczuk, Wojciech Dawidowski, Katarzyna Bielak, Mikołaj Badura, Łukasz Gelczuk, Marek Tłaczała, Magdalena Latkowska, Paulina Kamyczek, Jaroslav Kováč, Martin Florovič, Andrej Vincze

Proceedings Volume 8902, 89020J (2013) https://doi.org/10.1117/12.2031055

KEYWORDS: Quantum wells, Gallium arsenide, Nitrogen, Raman spectroscopy, Heterojunctions, Spectroscopy, Temperature metrology, Solar cells, Chemical species, Indium

Read Abstract +

Proceedings Article | 25 July 2013 Paper

Paper

Surface passivation of MSM photodetectors made on GaAsN epitaxial layers

Iwona Zborowska-Lindert, Beata Ściana, Damian Pucicki, Damian Radziewicz, Marek Panek, Bogusław Boratyński, Andrzej Stafiniak, Maria Ramiączek-Krasowska, Marek Tłaczała

Proceedings Volume 8902, 89020I (2013) https://doi.org/10.1117/12.2031054

KEYWORDS: Photodetectors, Gallium arsenide, Aluminum nitride, Crystals, Nitrogen, Visible radiation, Epitaxy, Optical lithography, Chemical species, Absorption

Read Abstract +

Proceedings Article | 25 July 2013 Paper

Paper

Characterization of Diamond-like Carbon (DLC) films deposited by RF ICP PECVD method

Waldemar Oleszkiewicz, Wojciech Kijaszek, Jacek Gryglewicz, Adrian Zakrzewski, Krzysztof Gajewski, Daniel Kopiec, Paulina Kamyczek, Ewa Popko, Marek Tłaczała

Proceedings Volume 8902, 89022H (2013) https://doi.org/10.1117/12.2031066

KEYWORDS: Deposition processes, Raman spectroscopy, Plasma enhanced chemical vapor deposition, Refractive index, Carbon, Hydrogen, Plasma, Atomic force microscopy, Spectroscopic ellipsometry, Atmospheric plasma

Read Abstract +

Proceedings Article | 25 July 2013 Paper

Paper

Investigation of deep-level defects in InGaAsN/GaAs 3xQWs structures grown by AP-MOVPE

Ł. Gelczuk, M. Dąbrowska-Szata, P. Kamyczek, E. Płaczek-Popko, K. Kopalko, B. Ściana, D. Pucicki, D. Radziewicz, M. Tłaczała

Proceedings Volume 8902, 89020F (2013) https://doi.org/10.1117/12.2030760

KEYWORDS: Gallium arsenide, Nitrogen, Quantum wells, Temperature metrology, Annealing, Crystals, Indium, Optical properties, Carbon, Spectroscopy

Read Abstract +

Proceedings Article | 30 September 2005 Paper

Paper

About holographic lithography for grating coupler fabrication in gallium nitride grown by MOVPE on sapphire substrate

R. Dylewicz, S. Patela, R. Paszkiewicz, M. Tlaczala, S. Bartkiewicz, A. Miniewicz

Proceedings Volume 5956, 59561J (2005) https://doi.org/10.1117/12.624820

KEYWORDS: Photoresist materials, Gallium nitride, Diffraction gratings, Sapphire, Holography, Lithography, Scanning electron microscopy, Transmittance, Photonics, Speckle

Read Abstract +

Proceedings Article | 17 April 2001 Paper

Paper

Application of GaN laterally overgrown on sapphire

Regina Paszkiewicz, Ryszard Korbutowicz, Bogdan Paszkiewicz, D. Radziewicz, J. Kozlowski, Marek Tlaczala

Proceedings Volume 4413, (2001) https://doi.org/10.1117/12.425404

KEYWORDS: Gallium nitride, Epitaxial lateral overgrowth, Sapphire, Photomasks, Scanning electron microscopy, Deposition processes, Vapor phase epitaxy, Gallium arsenide, Epitaxy, Crystals

Read Abstract +

Proceedings Article | 17 April 2001 Paper

Paper

Photoreflectance investigation of delta-doped MOVPE-grown AlxGa1-xAs layers

M. Nowaczyk-Utko, G. Sek, Jan Misiewicz, Beata Sciana, D. Radziewicz, Marek Tlaczala

Proceedings Volume 4413, (2001) https://doi.org/10.1117/12.425441

KEYWORDS: Gallium arsenide, Fourier transforms, Aluminum, Silicon, Spectroscopy, Semiconductors, Doping, Vapor phase epitaxy, Tungsten, Solar energy

Read Abstract +

Proceedings Article | 17 April 2001 Paper

Paper

Integrated photoreceivers with MSM and PIN photodetectors for high-frequency applications

Marek Tlaczala

Proceedings Volume 4413, (2001) https://doi.org/10.1117/12.425459

KEYWORDS: Photodetectors, Gallium arsenide, Sensors, Field effect transistors, Reflectors, Optical amplifiers, Optical instrument design, Indium, Integrated circuit design, Optoelectronics

Read Abstract +

Proceedings Article | 17 April 2001 Paper

Paper

Optical properties of GaN layers grown by MOCVD

R. Kudrawiec, Leszek Bryja, Jan Misiewicz, Regina Paszkiewicz, Ryszard Korbutowicz, Marek Panek, H. Paszkiewicz, Marek Tlaczala

Proceedings Volume 4413, (2001) https://doi.org/10.1117/12.425467

KEYWORDS: Excitons, Gallium nitride, Reflectivity, Metalorganic chemical vapor deposition, Luminescence, Optical properties, Temperature metrology, Crystals, Semiconductors, Transition metals

Read Abstract +

Proceedings Article | 8 April 1999 Paper

Paper

Growth of high-quality GaN and AlxGa1-xN layers by an MOVPE technique

Regina Paszkiewicz, Ryszard Korbutowicz, D. Radziewicz, Marek Panek, Bogdan Paszkiewicz, J. Kozlowski, Boguslaw Boratynski, Marek Tlaczala

Proceedings Volume 3725, (1999) https://doi.org/10.1117/12.344729

KEYWORDS: Gallium nitride, Aluminum, Heterojunctions, Solids, Reflection, Temperature metrology, Sapphire, X-rays, Deposition processes, Scanning electron microscopy

Read Abstract +

Proceedings Article | 8 April 1999 Paper

Paper

Optical studies of MOVPE-grown GaN layers

Mariusz Ciorga, Krzysztof Jezierski, Leszek Bryja, Jan Misiewicz, Regina Paszkiewicz, Ryszard Korbutowicz, Marek Panek, Bogdan Paszkiewicz, Marek Tlaczala, Ib Trabjerg

Proceedings Volume 3725, (1999) https://doi.org/10.1117/12.344728

KEYWORDS: Gallium nitride, Reflectivity, Luminescence, Refractive index, Sapphire, Optical testing, Statistical analysis, Visible radiation, Ultraviolet radiation, Nitrogen

Read Abstract +

Proceedings Article | 5 August 1997 Paper

Paper

Fiber- to integrated-optics structure coupling

Anna Sankowska, Boguslaw Boratynski, Robert Lowkis, Sergiusz Patela, Marek Tlaczala, Iwona Zborowska-Lindert

Proceedings Volume 3189, (1997) https://doi.org/10.1117/12.285623

KEYWORDS: Sensors, Optical fibers, Modulators, Integrated optics, Optoelectronic devices, Waveguides, Telecommunications, Gallium arsenide, Electrodes, Structured optical fibers

Read Abstract +

Proceedings Article | 13 June 1997 Paper

Paper

Observation of the new lines in photoluminescence from MOCVD-grown GaAs

Mariusz Ciorga, Jan Misiewicz, Marek Tlaczala, Marek Panek, Erling Veje

Proceedings Volume 3179, (1997) https://doi.org/10.1117/12.276211

KEYWORDS: Gallium arsenide, Luminescence, Metalorganic chemical vapor deposition, Carbon, Silicon, Hydrogen, Phonons, Temperature metrology, Electronics, Gallium

Read Abstract +

Proceedings Article | 13 June 1997 Paper

Paper

Photoluminescence of GaAs grown by liquid phase epitaxy from Bi solution

Mariusz Ciorga, Leszek Bryja, Jan Misiewicz, Regina Paszkiewicz, Marek Panek, Bogdan Paszkiewicz, Marek Tlaczala

Proceedings Volume 3179, (1997) https://doi.org/10.1117/12.276208

KEYWORDS: Bismuth, Gallium arsenide, Gallium, Liquid phase epitaxy, Luminescence, Liquids, Excitons, Carbon, Chemical species, Information operations

Read Abstract +

Proceedings Article | 13 June 1997 Paper

Paper

Photoreflectance and photoluminescence of InGaAs/GaAs structures

Jan Misiewicz, Mariusz Ciorga, G. Sek, Leszek Bryja, D. Radziewicz, Ryszard Korbutowicz, Marek Panek, Marek Tlaczala

Proceedings Volume 3179, (1997) https://doi.org/10.1117/12.276209

KEYWORDS: Quantum wells, Luminescence, Gallium arsenide, Indium, Metalorganic chemical vapor deposition, Indium gallium arsenide, Temperature metrology, Heterojunctions, Excitons

Read Abstract +

Proceedings Article | 8 April 1996 Paper

Paper

Making devices for fiber optic telecommunications: pigtailed detectors and transmitters

Sergiusz Patela, Marek Tlaczala

Proceedings Volume 2780, (1996) https://doi.org/10.1117/12.238188

Read Abstract +

Proceedings Article | 8 April 1996 Paper

Paper

LBIC investigation of the dynamic behavior of trapping-recombination centers

Bogdan Paszkiewicz, A. Romanowski, Regina Paszkiewicz, Marek Panek, Marek Tlaczala, Przemyslaw Andrzejewski

Proceedings Volume 2780, (1996) https://doi.org/10.1117/12.238144

Read Abstract +

Proceedings Article | 24 April 1995 Paper

Paper

Test structures for modeling and fabrication of Fabry-Perot-type GaAs/AlGaAs waveguide modulators

Sergiusz Patela, Robert Lowkis, Regina Paszkiewicz, Bogdan Paszkiewicz, Marek Tlaczala, Jacek Radojewski, Anna Sankowska

Proceedings Volume 2397, (1995) https://doi.org/10.1117/12.206912

KEYWORDS: Modulators, Waveguides, Resonators, Electrodes, Gallium arsenide, Electrooptic modulators, Fabry–Perot interferometers, Mirrors, Electro optical modeling, Electro optics

Read Abstract +

Proceedings Article | 24 April 1995 Paper

Paper

Liquid phase epitaxy (LPE) of GaAs from the Ga-Bi solutions

Marek Panek, Regina Paszkiewicz, Marek Tlaczala, Bogdan Paszkiewicz, Janusz Kozlowski, Sergey Novikov, V. Tshaldyshev

Proceedings Volume 2397, (1995) https://doi.org/10.1117/12.206913

KEYWORDS: Liquid phase epitaxy, Gallium arsenide, Bismuth, Liquids, Gallium, Arsenic, Diffusion, Luminescence, Epitaxy, Excitons

Read Abstract +

Proceedings Article | 24 April 1995 Paper

Paper

Photoreflectance spectroscopy of metalorganic chemical vapor deposition (MOCVD)-grown GaAs and GaAs/GaAlAs structures

Jan Misiewicz, Krzysztof Jezierski, P. Sitarck, P. Markiewicz, Ryszard Korbutowicz, Marek Panek, Beata Sciana, Marek Tlaczala

Proceedings Volume 2397, (1995) https://doi.org/10.1117/12.206864

KEYWORDS: Gallium arsenide, Interfaces, Metalorganic chemical vapor deposition, Quantum wells, Etching, Heterojunctions, Spectroscopy, Zinc, Silicon, Modulation

Read Abstract +

Showing 5 of 25 publications

SIGN IN TO:

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Advertisement

Advertisement