Ms. Margaret C. Lawson Profile

Margaret C. Lawson

at GLOBALFOUNDRIES Inc

SPIE Involvement:

Author

Publications (28)

Proceedings Article | 23 March 2020 Paper

EUV chemically amplified resist component distribution and efficiency for stochastic defect control

Dario Goldfarb, Olivia Wang, Conor Thomas, Heather Polgrean, Margaret Lawson, Alexander Hess, Anuja De Silva

Proceedings Volume 11326, 1132609 (2020) https://doi.org/10.1117/12.2551967

KEYWORDS: Extreme ultraviolet, Polymers, Extreme ultraviolet lithography, Ions, Optical lithography, Stochastic processes, Data modeling, Interfaces, Solids, Systems modeling

Read Abstract +

Proceedings Article | 20 March 2012 Paper

Assessment of negative tone development challenges

Sohan Mehta, Yongan Xu, Guillaume Landie, Vikrant Chauhan, Sean Burns, Peggy Lawson, Bassem Hamieh, Jerome Wandell, Martin Glodde, Yu Yang Sun, Mark Kelling, Alan Thomas, Jeong Soo Kim, James Chen, Hirokazu Kato, Chiahsun Tseng, Chiew-Seng Koay, Yoshinori Matsui, Martin Burkhardt, Yunpeng Yin, David Horak, Shyng-Tsong Chen, Yann Mignot, Yannick Loquet, Matthew Colburn, John Arnold, Terry Spooner, Lior Huli, Dave Hetzer, Jason Cantone, Shinichiro Kawakami, Shannon Dunn

Proceedings Volume 8325, 832506 (2012) https://doi.org/10.1117/12.917560

KEYWORDS: Semiconducting wafers, Polymers, Optical proximity correction, Reactive ion etching, Etching, Scanning electron microscopy, Neodymium, Photoresist developing, Image processing, Roads

Read Abstract +

Proceedings Article | 16 April 2011 Paper

Performance of tri-layer process required for 22 nm and beyond

Yayi Wei, Martin Glodde, Hakeem Yusuff, Margaret Lawson, Sang Yil Chang, Kwang Sub Yoon, Chung-Hsi Wu, Mark Kelling

Proceedings Volume 7972, 79722L (2011) https://doi.org/10.1117/12.879301

KEYWORDS: System on a chip, Etching, Silicon, Dielectrics, Semiconducting wafers, Particles, Coating, Reflectivity, Plasma etching, Plasma

Read Abstract +

Proceedings Article | 1 April 2008 Paper

32 nm logic patterning options with immersion lithography

K. Lai, S. Burns, S. Halle, L. Zhuang, M. Colburn, S. Allen, C. Babcock, Z. Baum, M. Burkhardt, V. Dai, D. Dunn, E. Geiss, H. Haffner, G. Han, P. Lawson, S. Mansfield, J. Meiring, B. Morgenfeld, C. Tabery, Y. Zou, C. Sarma, L. Tsou, W. Yan, H. Zhuang, D. Gil, D. Medeiros

Proceedings Volume 6924, 69243C (2008) https://doi.org/10.1117/12.784107

KEYWORDS: Photomasks, Double patterning technology, Logic, Lithography, Etching, Optical lithography, Optical proximity correction, Immersion lithography, Printing, Image processing

Read Abstract +

The semiconductor industry faces a lithographic scaling limit as the industry completes the transition to 1.35 NA immersion lithography. Both high-index immersion lithography and EUV lithography are facing technical challenges and commercial timing issues. Consequently, the industry has focused on enabling double patterning technology (DPT) as a means to circumvent the limitations of Rayleigh scaling. Here, the IBM development alliance demonstrate a series of double patterning solutions that enable scaling of logic constructs by decoupling the pattern spatially through mask design or temporally through innovative processes. These techniques have been successfully employed for early 32nm node development using 45nm generation tooling. Four different double patterning techniques were implemented. The first process illustrates local RET optimization through the use of a split reticle design. In this approach, a layout is decomposed into a series of regions with similar imaging properties and the illumination conditions for each are independently optimized. These regions are then printed separately into the same resist film in a multiple exposure process. The result is a singly developed pattern that could not be printed with a single illumination-mask combination. The second approach addresses 2D imaging with particular focus on both line-end dimension and linewidth control [1]. A double exposure-double etch (DE2) approach is used in conjunction with a pitch-filling sacrificial feature strategy. The third double exposure process, optimized for via patterns also utilizes DE2. In this method, a design is split between two separate masks such that the minimum pitch between any two vias is larger than the minimum metal pitch. This allows for final structures with vias at pitches beyond the capability of a single exposure. In the fourth method,, dark field double dipole lithography (DDL) has been successfully applied to BEOL metal structures and has been shown to be overlay tolerant [6]. Collectively, the double patterning solutions developed for early learning activities at 32nm can be extended to 22nm applications.

Proceedings Article | 9 April 2007 Paper

Building an immersion topcoat from the ground up: materials perspective

Mahmoud Khojasteh, Irene Popova, P. Rao Varanasi, Linda Sundberg, C. Robinson, D. Corliss, Margaret Lawson, G. Dabbagh, M. Slezak, Matthew Colburn, K. Petrillo

Proceedings Volume 6519, 651907 (2007) https://doi.org/10.1117/12.712095

KEYWORDS: Thin film coatings, Polymers, Polymer thin films, Lithography, Immersion lithography, Solids, Photoresist processing, Scanners, Scanning electron microscopy, Statistical analysis

Read Abstract +

Proceedings Article | 2 April 2007 Paper

Fluoro-alcohol materials with tailored interfacial properties for immersion lithography

Daniel Sanders, Linda Sundberg, Ratnam Sooriyakumaran, Phillip Brock, Richard DiPietro, Hoa Truong, Dolores Miller, Margaret Lawson, Robert Allen

Proceedings Volume 6519, 651904 (2007) https://doi.org/10.1117/12.712768

KEYWORDS: Fluorine, Polymers, Immersion lithography, Lithography, Interfaces, Semiconducting wafers, Carbon, Water, Surface properties, Hydrogen

Read Abstract +

Proceedings Article | 23 March 2007 Paper

High-performance 193-nm photoresists based on fluorosulfonamide

Wenjie Li, Kuang-Jung Chen, Ranee Kwong, Margaret Lawson, Mahmoud Khojasteh, Irene Popova, P. Rao Varanasi, Tsutomu Shimokawa, Yoshikazu Yamaguchi, Shiro Kusumoto, Makoto Sugiura, Takanori Kawakami, Mark Slezak, Gary Dabbagh, Zhi Liu

Proceedings Volume 6519, 65190F (2007) https://doi.org/10.1117/12.712231

KEYWORDS: Polymers, Etching, Fluorine, Resistance, Lithography, Immersion lithography, 193nm lithography, Chemical species, Photoresist materials, Lithographic illumination

Read Abstract +

Proceedings Article | 12 May 2005 Paper

First microprocessors with immersion lithography

D. Gil, T. Bailey, D. Corliss, M. Brodsky, P. Lawson, M. Rutten, Z. Chen, N. Lustig, T. Nigussie, K. Petrillo, C. Robinson

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.598855

KEYWORDS: Semiconducting wafers, Immersion lithography, Scanners, Lithography, Critical dimension metrology, Semiconductor manufacturing, Manufacturing, Bacteria, Resistance, Polishing

Read Abstract +

Proceedings Article | 4 May 2005 Paper

Progress toward developing high performance immersion compatible materials and processes

Karen Petrillo, Kaushal Patel, Rex Chen, Wenjie Li, Ranee Kwong, Peggy Lawson, Rao Varanasi, Chris Robinson, Steven Holmes, Dario Gil, Kurt Kimmel, Mark Slezak, Gary Dabbagh, Takashi Chiba, Tsutomu Shimokawa

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.601621

KEYWORDS: Polymers, Lithography, Immersion lithography, Materials processing, Semiconducting wafers, Particles, Photoresist materials, Image processing, Photoresist processing, Scanners

Read Abstract +

Proceedings Article | 4 May 2005 Paper

193nm single layer photoresists: defeating tradeoffs with a new class of fluoropolymers

Pushkara Varanasi, Ranee Kwong, Mahmoud Khojasteh, Kaushal Patel, Kuang-Jung Chen, Wenjie Li, M. Lawson, Robert Allen, Ratnam Sooriyakumaran, P. Brock, Linda Sundberg, Mark Slezak, Gary Dabbagh, Z. Liu, Yukio Nishimura, Takashi Chiba, Tsutomu Shimokawa

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599700

KEYWORDS: Polymers, 193nm lithography, Lithography, Etching, Photoresist materials, Fluorine, Immersion lithography, Modulation, Photomasks, Reactive ion etching

Read Abstract +

Proceedings Article | 28 May 2004 Paper

BEOL lithography for early development at the 65-nm node

Ronald DellaGuardia, Ranee Kwong, Wenjie Li, Peggy Lawson, Martin Burkhardt, Ioana Grauer, Qiang Wu, M. Angyal, H. Hichri, Ian Melville, K. Kumar, Y. Lin, Steven Holmes, R. Varanasi, T. Spooner, D. McHerron

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.544238

KEYWORDS: Lithography, Etching, Photomasks, Semiconducting wafers, Metals, Critical dimension metrology, Silicon, Image processing, Back end of line, Finite element methods

Read Abstract +

Proceedings Article | 14 May 2004 Paper

Rinse additives for line-edge roughness control in 193-nm lithography

Dario Goldfarb, Sean Burns, Ryan Burns, Colin Brodsky, Margaret Lawson, Marie Angelopoulos

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.537723

KEYWORDS: Line edge roughness, Critical dimension metrology, Lithography, Semiconducting wafers, Extreme ultraviolet lithography, Photoresist materials, Photoresist developing, Photoresist processing, Standards development, Optical lithography

Read Abstract +

Proceedings Article | 14 May 2004 Paper

Rinse additives for defect suppression in 193-nm and 248-nm lithogrophy

Spyridon Skordas, Ryan Burns, Dario Goldfarb, Sean Burns, Marie Angelopoulos, Colin Brodsky, Margaret Lawson, Carole Pillette, Jeffrey Bright, Robert Isaacson, Mark Lagus, Vandana Vishnu

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.537764

KEYWORDS: Adsorption, Lithography, Semiconducting wafers, Polymers, Photoresist processing, Satellites, Molecules, Particles, Photoresist developing, 193nm lithography

Read Abstract +

Proceedings Article | 14 May 2004 Paper

IBM-JSR 193-nm negative tone resist: polymer design, material properties, and lithographic performance

Kaushal Patel, Margaret Lawson, Pushkara Rao Varanasi, David Medeiros, Gregory Wallraff, Phillip Brock, Richard DiPietro, Yukio Nishimura, Takashi Chiba, Mark Slezak

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.536874

KEYWORDS: Polymers, Etching, Photoresist processing, Lithography, 193nm lithography, Printing, Oxides, Standards development, Resistance, Fluorine

Read Abstract +

Proceedings Article | 12 June 2003 Paper

Impact of thin resist processes on post-etch LER

Arpan Mahorowala, Dario Goldfarb, Karen Temple, Karen Petrillo, Dirk Pfeiffer, Katherina Babich, Marie Angelopoulos, Gregg Gallatin, Stacy Rasgon, Herbert Sawin, Scott Allen, Robert Lang, Margaret Lawson, Ranee Kwong, Kuang-Jung Chen, Wenjie Li, Pushkara Varanasi, Martha Sanchez, Hiroshi Ito, Gregory Wallraff, Robert Allen

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485168

KEYWORDS: Etching, Oxides, Scanning electron microscopy, Line edge roughness, Atomic force microscopy, Polymers, Plasma, Plasma etching, Chemistry, Photoresist processing

Read Abstract +

Proceedings Article | 12 June 2003 Paper

Rational design in cyclic olefin resists for sub-100-nm lithography

Wenjie Li, Pushkara Varanasi, Margaret Lawson, Ranee Kwong, Kuang-Jung Chen, Hiroshi Ito, Hoa Truong, Robert Allen, Masafumi Yamamoto, Eiichi Kobayashi, Mark Slezak

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485100

KEYWORDS: Polymers, Etching, Lithography, Resistance, Fluorine, Surface roughness, Dry etching, Semiconducting wafers, 193nm lithography, Polymer thin films

Read Abstract +

Proceedings Article | 12 June 2003 Paper

High-performance 193-nm photoresist materials based on a new class of polymers containing spaced ester functionalities

Mahmoud Khojasteh, K. Rex Chen, Ranee Kwong, Margaret Lawson, Pushkara Varanasi, Kaushal Patel, Eiichi Kobayashi

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485126

KEYWORDS: Polymers, Lithography, Photoresist materials, Polymerization, Photoresist processing, Manufacturing, Logic, Medium wave, Microelectronics, Resistance

Read Abstract +

Proceedings Article | 24 July 2002 Paper

Evolution of a 193-nm bilayer resist for manufacturing

Ranee Kwong, Mahmoud Khojasteh, Margaret Lawson, Timothy Hughes, Pushkara Varanasi, William Brunsvold, Robert Allen, Phillip Brock, Ratnam Sooriyakumaran, Hoa Truong, Arpan Mahorowala, David Medeiros

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474239

KEYWORDS: Silicon, Etching, Polymers, Lithography, Reactive ion etching, 193nm lithography, Photomasks, Manufacturing, Absorbance, Resistance

Read Abstract +

Proceedings Article | 24 August 2001 Paper

Postmodification as a way to improve the lithographic performance of resist materials

Wenjie Li, Pushkara Varanasi, Margaret Lawson, Timothy Hughes, George Jordhamo, Robert Allen, Hiroshi Ito

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436909

KEYWORDS: Polymers, Lithography, Etching, Resistance, Reactive ion etching, Polymerization, Silicon, Semiconducting wafers, Standards development, Transparency

Read Abstract +

Proceedings Article | 24 August 2001 Paper

ArF resist for contact hole application

K. Rex Chen, Margaret Lawson, Timothy Hughes, William Brunsvold, Pushkara Varanasi, Robin Keller, George Jordhamo

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436910

KEYWORDS: Polymers, Floods, Laser induced plasma spectroscopy, Contamination, Photomasks, Semiconducting wafers, Scanners, Printing, Manufacturing, Microelectronics

Read Abstract +

Proceedings Article | 24 August 2001 Paper

193-nm single-layer resist materials: total consideration of design, physical properties, and lithographic performances on all major alicyclic platform chemistries

Toru Kajita, Yukio Nishimura, Masafumi Yamamoto, Hiroyuki Ishii, A. Soyano, A. Kataoka, Mark Slezak, Makoto Shimizu, Pushkara Varanasi, G. Jordahamo, Margaret Lawson, R. Chen, William Brunsvold, Wenjie Li, Robert Allen, Hiroshi Ito, Hoa Truong, Thomas Wallow

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436833

KEYWORDS: Etching, Monochromatic aberrations, Chemistry, Polymers, Lithography, Polymerization, Resistance, Imaging systems, Surface roughness, Transparency

Read Abstract +

Proceedings Article | 24 August 2001 Paper

IBM 193-nm bilayer resist: materials, lithographic performance, and optimization

Ranee Kwong, Pushkara Varanasi, Margaret Lawson, Timothy Hughes, George Jordhamo, Mahmoud Khojasteh, Arpan Mahorowala, Ratnam Sooriyakumaran, Phillip Brock, Carl Larson, Debra Fenzel-Alexander, Hoa Truong, Robert Allen

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436892

KEYWORDS: Etching, 193nm lithography, Photomasks, Polymers, Reactive ion etching, Lithography, Silicon, Resistance, Glasses, Antireflective coatings

Read Abstract +

Proceedings Article | 23 June 2000 Paper

Progress toward developing high-performance 193-nm single-layer positive resist based on functionalized poly(norbornenes)

Pushkara Varanasi, George Jordhamo, Margaret Lawson, K. Rex Chen, William Brunsvold, Timothy Hughes, Robin Keller, Mahmoud Khojasteh, W. Li, Robert Allen, Hiroshi Ito, Juliann Opitz, Hoa Truong, Thomas Wallow

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388280

KEYWORDS: Polymers, Etching, Lithography, Reactive ion etching, Surface roughness, Photomasks, 193nm lithography, Phase shifts, Deep ultraviolet, Photoresist materials

Read Abstract +

Proceedings Article | 23 June 2000 Paper

Effect of acid labile ether protecting groups on the oxide etch resistance and lithographic performance of 248-nm resists

Pushkara Varanasi, Kathleen Cornett, Margaret Lawson

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388316

KEYWORDS: Etching, Lithography, Resistance, Polymers, Chemistry, Reactive ion etching, Glasses, Oxides, Carbonates, Carbon

Read Abstract +

Proceedings Article | 23 June 2000 Paper

Defect printing issues with high-contrast chemically amplified resists

Zhijian Lu, Wayne Moreau, Xiaoming Yin, K. Rex Chen, Alan Thomas, Peggy Lawson, George Jordhamo, ChungHsi Wu

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388284

KEYWORDS: Polymers, Printing, Semiconducting wafers, Floods, Photomasks, Chemically amplified resists, Etching, Inspection, Sulfur, Microelectronics

Read Abstract +

Proceedings Article | 11 June 1999 Paper

Design and development of high-performance 193-nm positive resist based on functionalized poly(cyclicolefins)

Pushkara Varanasi, J. Maniscalco, Ann Mewherter, Margaret Lawson, George Jordhamo, Robert Allen, Juliann Opitz, Hiroshi Ito, Thomas Wallow, Donald Hofer, Leah Langsdorf, Saikumar Jayaraman, Richard Vicari

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350251

KEYWORDS: Polymers, Etching, Reactive ion etching, 193nm lithography, Lithography, Photoresist processing, Photoresist materials, Semiconductors, Photoresist developing, Absorption

Read Abstract +

Proceedings Article | 29 June 1998 Paper

Acid diffusion in a chemically amplified negative i-line photoresist

Judy Connolly, K. Rex Chen, Ranee Kwong, Margaret Lawson, Leo Linehan, Wayne Moreau

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312474

KEYWORDS: Diffusion, Photoresist materials, Oxides, Photoresist processing, Semiconducting wafers, Temperature metrology, Critical dimension metrology, Manufacturing, Photochemistry, Image quality

Read Abstract +

Proceedings Article | 29 June 1998 Paper

Advanced negative resists using novel aminoplast crosslinkers

Ali Afzali-Kushaa, Jeffrey Gelorme, Laura Kosbar, Mark Neisser, W. Brunswold, Christopher Feild, Margaret Lawson, Pushkara Varanasi

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312358

KEYWORDS: Lithography, Semiconducting wafers, Photoresist developing, Photoresist processing, Photoresist materials, Standards development, Silicon, Image resolution, Manufacturing, Microelectronics

Read Abstract +

Showing 5 of 28 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years