Transition metal dichalcogenides (TMDs) are great candidates for thin film photovoltaic cells due to their high absorption coefficient. WS2, with a band gap of 1.57 eV, is specifically attractive for applications where high open-circuit voltage (Voc) is required. However, due to strong Fermi level pinning at the contacts, Voc is nearly zero if a standard metal contact scheme is used on intrinsic WS2. In this work, for the first time, we achieve a record high Voc of 335 mV by using AlOx and MoOx for n and p doping of WS2, respectively.
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