Today, power semiconductor devices enable sustaining several kilovolts and kiloamperes. New structures are constantly
being developed for almost every particular device type. However, below the advanced technological concepts, proper
design still relies on a few simple rules that result from physical operating principles and limits of semiconductor
The behavioral and circuit equivalent models applied to silicon carbide semiconductor power devices have been
presented. The MOSFET and Merged PiN Schottky diode (MPS) including dynamic electro-thermal modeling have been
described in details. The authors also show the problems of the active power estimation for dynamic SiC MPS diode and
unrealistic results for manufacturer-provided models.