Mr. Marshal A. Miller Profile

Marshal A. Miller

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Publications (11)

SPIE Journal Paper | 19 July 2016

Improvement of optical proximity-effect correction model accuracy by hybrid optical proximity-effect correction modeling and shrink correction technique for 10-nm node process

Keiichiro Hitomi, Scott Halle, Marshal Miller, Ioana Graur, Nicole Saulnier, Derren Dunn, Nobuhiro Okai, Shoji Hotta, Atuko Yamaguchi, Hitoshi Komuro, Toru Ishimoto, Shunsuke Koshihara, Yutaka Hojo

JM3, Vol. 15, Issue 03, 034002, (July 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.3.034002

KEYWORDS: Optical proximity correction, Data modeling, Critical dimension metrology, Optical calibration, Scanning electron microscopy, Hybrid optics, Metals, Calibration, Instrument modeling, OLE for process control

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Proceedings Article | 31 March 2015 Paper

Application of SEM-based contours for OPC model weighting and sample plan reduction

Marshal Miller, Ioana Graur, Scott Halle, Keiichiro Hitomi, Todd Bailey

Proceedings Volume 9426, 94260Y (2015) https://doi.org/10.1117/12.2176406

KEYWORDS: Calibration, Data modeling, Cadmium sulfide, Optical proximity correction, Scanning electron microscopy, Statistical modeling, Finite element methods, Semiconducting wafers, Front end of line, Optical lithography

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Proceedings Article | 31 March 2014 Paper

Hybrid OPC modeling with SEM contour technique for 10nm node process

Keiichiro Hitomi, Scott Halle, Shoji Hotta, Marshal Miller, Ioana Graur, Nicole Saulnier, Derren Dunn, Nobuhiro Okai, Atsuko Yamaguchi, Hitoshi Komuro, Toru Ishimoto, Shunsuke Koshihara, Yutaka Hojo

Proceedings Volume 9052, 90520W (2014) https://doi.org/10.1117/12.2047678

KEYWORDS: Optical proximity correction, Data modeling, Scanning electron microscopy, Critical dimension metrology, Metals, Instrument modeling, Calibration, Metrology, Logic devices, OLE for process control

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Proceedings Article | 19 May 2011 Paper

Collaborative research on emerging technologies and design

Cooper Levy, Kun Qian, Tuck Boon Chan, Lynn Wang, Costas Spanos, Rani Ghaida, Kenji Yamazoe, Abde Kaqalwalla, Kwangok Jeong, Kameshwar Poolla, Andrew Neureuther, Nuo Xu, Marshal Miller, Justin Ghan, Puneet Gupta, Eric Chin, Xin Sun, Juliet Rubinstein, Tsu-Jae King Liu, Anand Subramanian

Proceedings Volume 8081, 80810N (2011) https://doi.org/10.1117/12.899394

KEYWORDS: Photomasks, Double patterning technology, Lithography, Image processing, Line edge roughness, Algorithm development, Reticles, Inspection, Design for manufacturing, Device simulation

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Proceedings Article | 10 March 2010 Paper

Automatic numerical determination of lateral influence functions for fast-CAD

Marshal Miller, Andrew Neureuther, Kenji Yamazoe

Proceedings Volume 7640, 764031 (2010) https://doi.org/10.1117/12.846630

KEYWORDS: Photomasks, Composites, Convolution, Polarization, Monochromatic aberrations, Lithography, Electromagnetism, Calibration, Binary data, Detection and tracking algorithms

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Proceedings Article | 30 September 2009 Paper

Extensions of boundary layer modeling of photomask topography effects to fast-CAD using pattern matching

Kenji Yamazoe, Marshal Miller, Andrew Neureuther

Proceedings Volume 7488, 74883H (2009) https://doi.org/10.1117/12.829657

KEYWORDS: Photomasks, Composites, Monochromatic aberrations, Fourier transforms, Lithography, Zernike polynomials, Airborne remote sensing, Polarization, Electromagnetism, Semiconducting wafers

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Proceedings Article | 16 March 2009 Paper

Analysis and modeling of photomask edge effects for 3D geometries and the effect on process window

Andrew Neureuther, Marshal Miller

Proceedings Volume 7274, 727424 (2009) https://doi.org/10.1117/12.814250

KEYWORDS: Photomasks, Polarization, Phase shifts, 3D modeling, Solid modeling, Computer aided design, Finite-difference time-domain method, Semiconducting wafers, Near field, Data modeling

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Proceedings Article | 1 November 2007 Paper

Parameter sensitive patterns for scatterometry monitoring

Chaohao Wang, Jing Xue, Marshal Miller, Costas Spanos, Andrew Neureuther, Yu Ben

Proceedings Volume 6730, 67304S (2007) https://doi.org/10.1117/12.746833

KEYWORDS: Scatterometry, Calibration, Critical dimension metrology, Data modeling, Scatter measurement, Semiconducting wafers, Metrology, Phase shifts, Finite element methods, Panoramic photography

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Proceedings Article | 30 October 2007 Paper

Characterization and monitoring of photomask edge effects

Andrew Neureuther, Marshal Miller, Juliet Rubinstein, Daniel Ceperley

Proceedings Volume 6730, 67301U (2007) https://doi.org/10.1117/12.746805

KEYWORDS: Photomasks, Glasses, Phase shifting, Polarization, Finite-difference time-domain method, Phase shifts, Electromagnetic simulation, Etching, Dielectrics, Diffraction

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Proceedings Article | 28 March 2007 Open Access

Collaborative platform, tool-kit, and physical models for DfM

Mike Lieberman, Alan Wu, Chris Clifford, John Hoang, Jane Chang, David Graves, Jerry Hsu, Dan Ceperley, Juliet Holwill, Marshal Miller, Eric Chin, Costas Spanos, Jihong Choi, Jae-Seok Yang, Dave Dornfeld, Lynn Wang, Andy Neureuther, Wojtek Poppe, Paul Friedberg, Koji Kikuchi

Proceedings Volume 6521, 652104 (2007) https://doi.org/10.1117/12.721199

KEYWORDS: Design for manufacturing, Photomasks, Device simulation, Computer aided design, Process modeling, Etching, Monochromatic aberrations, Manufacturing, Lithography, Chemical mechanical planarization

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Proceedings Article | 23 June 2006 Paper

Stray-light sources from pupil mask edges and mitigation techniques for the TPF Coronagraph

Andrew Neureuther, Daniel Ceperley, Michael Lieber, Marshall Miller, Jeremy Kasdin

Proceedings Volume 6271, 62711F (2006) https://doi.org/10.1117/12.684699

KEYWORDS: 3D modeling, Photomasks, Silicon, Diffraction, Manufacturing, Systems modeling, Polarization, Near field, Coronagraphy, Finite-difference time-domain method

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Stray-light sources from pupil plane masks that may limit Terrestrial Planet Finder Coronagraph (TPF-C) performance are characterized^1,2 and mitigation strategies are discussed to provide a guide for future development. Rigorous vector simulation with the Finite-Difference Time-Domain (FDTD) method is used to characterize waveguiding effects in narrow openings, sidewall interactions, manufacturing tool-marks, manufacturing roughness, mask tilt, and cross-wavelength performance of thick Silicon mask structures. These effects cause stray-light that is not accounted for in scalar thin-mask diffraction theory, the most important of which are sidewall interactions, waveguiding effects in narrow openings, and tilt. These results have been used to improve the scalar thin-mask theory used to simulate the TPF-C with the Integrated Telescope Model.³ Of particular interest are simulations of 100m thick vertical sidewall openings that model features typically found on Ripple masks⁴ fabricated by Reactive Ion Etching (RIE) processes.⁵ This paper contributes fundamental data for systematically modeling these effects in end-to-end system simulation. Leakage straight through the mask material varies greatly with wavelength, especially in Silicon (an attractive mask material due to the precision manufacturing techniques developed by the IC industry). Coating Silicon with 200nm of Chrome effectively mitigates the leakage without causing additional scattering. Thick-mask diffraction differs from the predictions of scalar thin-mask theory because diffraction spreading is confined by the mask's sidewalls. This confinement can make a mask opening look electro-magnetically larger or smaller than designed, by up to 3λ per vertical sidewall on a 50μm thick mask yet this can be reduced an order of magnitude by undercutting the sidewalls 20°. These confinement effects are sensitive to mask tilt (if light reaches the sidewalls) which can lead to an imbalance in stray-light sources and an extra wavelength of effective opening change on the illuminated sidewall.

Showing 5 of 11 publications

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